APTGT20TL60T3G Three level inverter Trench + Field Stop IGBT Power Module VCES = 600V IC = 20A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring 28 27 26 25 23 22 Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 … Q1 to Q4 Absolute maximum ratings ICM VGE PD RBSOA TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 32 20 40 ±20 62 40A @ 550V Unit V A March, 2009 IC Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGT20TL60T3G – Rev0 Symbol VCES APTGT20TL60T3G All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 20A Tj = 150°C VGE = VCE , IC = 300µA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Min Typ Max Unit 250 1.9 µA 6.5 300 V nA Max Unit V Q1 to Q4 Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Tf Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data RthJC VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=20A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 20A RG = 12Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 20A RG = 12Ω Tj = 25°C VGE = ±15V VBus = 300V Tj = 150°C IC = 20A Tj = 25°C RG = 12Ω Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Junction to Case Thermal Resistance 1100 70 35 pF 0.2 µC 110 45 200 ns 40 120 50 ns 250 60 0.11 0.2 0.5 0.7 mJ 100 A mJ 2.4 °C/W March, 2009 Td(on) Tr Td(off) Test Conditions www.microsemi.com 2-6 APTGT20TL60T3G – Rev0 Symbol Characteristic APTGT20TL60T3G CR1 to CR6 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy RthJC Test Conditions VR=600V IF = 20A VGE = 0V IF = 20A VR = 300V di/dt =1600A/µs Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 20 1.6 1.5 100 150 1.1 Tj = 150°C Tj = 25°C Tj = 150°C 2.3 0.23 0.50 Max 150 350 Junction to Case Thermal Resistance Unit V µA A 2 V ns µC mJ 3.25 °C/W Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min Typ 50 5 3952 4 Max Unit kΩ % K % Min 2500 -40 -40 -40 2.5 Typ Max Unit V T25 = 298.15 K TC=100°C RT = R25 T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ T T ⎝ 25 ⎠⎦ ⎣ Thermal and package characteristics Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M4 175 125 100 4.7 110 °C N.m g March, 2009 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight www.microsemi.com 3-6 APTGT20TL60T3G – Rev0 Symbol VISOL TJ TSTG TC Torque Wt APTGT20TL60T3G SP3 Package outline (dimensions in mm) 28 17 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com Q1 to Q4 Typical performance curve 80 VCE=300V D=50% R G=12Ω T J=150°C 60 T c =85°C 40 March, 2009 Hard switching 20 0 0 5 10 15 20 25 30 IC (A) www.microsemi.com 4-6 APTGT20TL60T3G – Rev0 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current APTGT20TL60T3G Output Characteristics (VGE=15V) Output Characteristics 40 40 TJ=25°C 35 TJ=150°C 25 IC (A) IC (A) 30 TJ=125°C 30 20 15 10 5 5 TJ=25°C 0.5 1 1.5 VCE (V) VGE=9V 0 2 2.5 0 3 0.5 1.25 35 TJ=25°C E (mJ) 25 20 TJ=125°C 10 TJ=150°C 0.75 TJ=25°C 7 8 9 Eoff 0 10 11 0 12 10 20 30 40 IC (A) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 50 VCE = 300V VGE =15V IC = 20A TJ = 150°C Eon 40 Eoff IC (A) E (mJ) 1 3.5 Eon VGE (V) 1.5 3 0.5 0 6 2.5 0.25 5 5 1.5 2 VCE (V) VCE = 300V VGE = 15V RG = 12Ω TJ = 150°C 1 30 15 1 Energy losses vs Collector Current Transfert Characteristics 40 IC (A) VGE=15V 20 10 0 VGE=13V 25 15 0 VGE=19V TJ = 150°C 35 30 20 0.5 VGE=15V TJ=150°C RG=12Ω 10 Eon 0 0 10 30 50 70 0 100 Gate Resistance (ohms) 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 2 1.6 1.2 0.8 0.4 0.9 0.7 March, 2009 2.4 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-6 APTGT20TL60T3G – Rev0 Thermal Impedance (°C/W) 2.8 APTGT20TL60T3G CR1 to CR6 Typical performance curve Forward Characteristic of diode 40 35 30 IF (A) 25 20 15 TJ=150°C 10 5 TJ=25°C 0 0 0.4 0.8 1.2 VF (V) 1.6 2 2.4 Switching Energy Losses vs Gate Resistance Energy losses vs Collector Current 0.8 0.5 VCE = 300V IC = 20A TJ = 150°C 0.6 E (mJ) E (mJ) 0.375 0.25 0.4 0.125 0.2 0 0 10 30 50 VCE = 300V RG = 12Ω TJ = 150°C 0 70 10 20 30 40 IF (A) Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 3 2.5 2 1.5 0.9 0.7 0.5 0.3 1 0.5 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 March, 2009 Rectangular Pulse Duration in Seconds Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTGT20TL60T3G – Rev0 Thermal Impedance (°C/W) 3.5