BAV74 Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV74 JAs Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Peak reverse voltage VRM 50 Forward current IF 200 mA Surge forward current, t = 1 s IFS 4.5 A Total power dissipation, TS = 35 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 460 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-31-2001 BAV74 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 50 - - VF - - 1 IR - - 0.1 IR - - 100 CD - - 2 pF trr - - 4 ns DC characteristics Breakdown voltage V(BR) V I(BR) = 100 µA Forward voltage IF = 100 mA Reverse current µA VR = 50 V Reverse current VR = 50 V, TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 , measured at IR = 1mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00019 Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50 Oscillograph: R = 50, tr = 0.35ns, C 1pF 2 Jul-31-2001 BAV74 Forward current IF = f (TS ) Reverse current IR = f (TA) BAV 74 10 5 220 EHB00070 nA mA ΙR 180 VR = 70 V 10 4 160 max. IF 5 140 120 70V 10 3 100 25V 5 80 60 10 2 40 5 typ. 20 0 0 15 30 45 60 75 90 105 120 °C 10 1 150 0 50 100 TS Peak forward current IFM = f (t p) TA = 25°C TA = 25°C ΙF BAV 74 150 TA Forward current IF = f (VF ) 150 ˚C EHB00071 10 2 Ι FM mA BAV 74 EHB00072 D = 0.005 0.01 0.02 0.05 0.1 0.2 A 10 1 100 typ 10 0 max 50 10 -1 tp D= tp T T 0 0 0.5 1.0 V 10-2 10-6 1.5 VF 10-5 10-4 10-3 10-2 10-1 s 100 t 3 Jul-31-2001 BAV74 Forward voltage VF = f (TA) 1.0 BAV 74 V EHB00073 Ι F = 100 mA VF 10 mA 1 mA 0.5 0.1 mA 0 0 50 100 ˚C 150 TA 4 Jul-31-2001