BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VES05991 Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q62702-A1239 1=A SCD-80 2=C Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current IF 250 mA Surge forward current, t = 1 µs I FS 2.5 A Total power dissipation, T S = 119 °C Ptot 100 mW Junction temperature Tj 150 °C Storage temperature T stg Semiconductor Group Semiconductor Group 11 Value Unit V - 65 ...+150 Jul-24-1998 1998-11-01 BAS 16-02W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 75 - - DC characteristics Breakdown voltage V(BR) V I (BR) = 100 µA Forward voltage mV VF I F = 1 mA - - 715 I F = 10 mA - - 855 I F = 50 mA - - 1000 I F = 150 mA - - 1250 - - 1 Reverse current IR µA VR = 70 V Reverse current nA IR VR = 25 V, TA = 150 °C - - 30 VR = 75 V, TA = 150 °C - - 50 Vfr - - 1.75 V CD - - 2 pF t rr - - 6 ns Forward recovery voltage I F = 10 mA, t p = 20 ns AC characteristics Diode capacitance VR = 0 V, f = 20 MHz Reverse recovery time I F = 10 mA, I R = 10 mA, R L = 100 Ω, measured at IR = 1mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00016 Pulse generator: tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50Ω Semiconductor Group Semiconductor Group Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF 22 Jul-24-1998 1998-11-01 BAS 16-02W Forward current IF = f V F) Reverse current IR = f (TA) T A = 25°C 150 BAS 16 BAS 16 EHB00023 ΙR Ι F mA EHB00022 10 5 nA V R = 70 V 10 4 max. 5 100 typ 70 V 10 3 max 5 25 V 50 typ. 10 2 5 0 0 0.5 1.0 V 10 1 1.5 0 VF 50 100 C TA 150 Forward voltage V F = f (TA) 1.0 VF BAS 16 V EHB00025 Ι F = 100 mA 10 mA 1 mA 0.5 0.1 mA 0 0 50 Semiconductor Group Semiconductor Group 100 C TA 150 33 Jul-24-1998 1998-11-01