TN2435 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Low threshold High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Applications ► ► ► ► ► ► ► Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device TN2435 Package Option BVDSS/BVDGS RDS(ON) ID(ON) (min) (A) 1.0 TO-243AA (SOT-89) (V) (max) (Ω) TN2435N8-G 350 6.0 -G indicates package is RoHS compliant (‘Green’) Pin Configuration DRAIN Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Operating and storage temperature Soldering temperature* -55OC to +150OC 300OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * GATE SOURCE DRAIN TO-243AA (SOT-89) (N8) Product Marking TN4SW W = Code for week sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-243AA (SOT-89) (N8) Distance of 1.6mm from case for 10 seconds. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com TN2435 Thermal Characteristics ID ID Power Dissipation θjc Package (continuous)† (mA) (pulsed) (A) @TA = 25OC (W) ( C/W) TO-243AA (SOT-89) 365 1.8 1.6‡ 15 O ( C/W) IDR† (mA) IDRM 78‡ 365 1.8 O θja Notes: † ID (continuous) is limited by max rated Tj . ‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 350 - - V VGS = 0V, ID = 250µA VGS(th) Gate threshold voltage 0.8 - 2.5 V VGS = VDS, ID= 1.0mA Change in VGS(th) with temperature - - -5.5 Gate body leakage - - 100 nA VGS = ± 20V, VDS = 0V - - 10 µA VGS = 0V, VDS = Max Rating - - 1.0 mA VDS = 0.8Max Rating, VGS = 0V, TA = 125°C 0.5 - - 1.0 - - - - 15 - - 10 - - 6.0 - - 1.7 125 - - ΔVGS(th) IGSS IDSS Zero gate voltage drain current ID(ON) On-state drain current RDS(ON) ΔRDS(ON) Static drain-to-source on-state resistance Change in RDS(ON) with temperature Forward transductance CISS Input capacitance - 125 200 COSS Common source output capacitance - 25 70 CRSS Reverse transfer capacitance - 8.0 25 td(ON) Turn-on delay time - 5.0 20 Rise time - 10 20 Turn-off delay time - 28 40 Fall time - 10 30 Diode forward voltage drop - - Reverse recovery time - 300 tr td(OFF) tf VSD trr mV/ C VGS = VDS, ID= 1.0mA O A GFS Conditions VGS = 4.5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 3.0V, ID = 150mA Ω VGS = 4.5V, ID = 250mA VGS = 10V, ID = 750mA %/ C O VGS = 10V, ID = 750mA mmho VDS = 20V, ID = 350mA pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 750mA, RGEN = 25Ω 1.5 V VGS = 0V, ISD = 750mA - ns VGS = 0V, ISD = 750mA Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V VDD 90% INPUT 0V PULSE GENERATOR 10% t(ON) td(ON) VDD t(OFF) tr 10% td(OFF) RL OUTPUT RGEN tF D.U.T. 10% INPUT OUTPUT 0V 90% 90% ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 2 (A) TN2435 Typical Performance Curves Output Characteristics Saturation Characteristics 3.0 2.0 VGS = 10V 8V 6V 2.0 5V 1.5 4V 1.0 VGS = 10V 8V 6V 5V 1.6 ID (Amperes) ID (Amperes) 2.5 4V 1.2 3V 0.8 3V 2.5V 0.4 2.5V 0.5 0 0 10 20 30 40 0.0 50 0 2 4 6 8 10 VDS (Volts) VDS (Volts) Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature 1.0 2.0 V DS =15V TO-243AA T A =-55 O C 1.5 PD (Watts) GFS (siemens) 0.8 0.6 T A =25 O C 1.0 0.4 T A =125 O C 0.5 0.2 0.0 0.0 0.5 1.0 1.5 0.0 2.0 0 25 50 ID (Amperes) Maximum Rated Safe Operating Area 100 125 150 Thermal Response Characteristics 10 Thermal Resistance (normalized) 1.0 TO-243AA (pulsed) 1.0 ID (amperes) 75 TA (O C) TO-243AA (DC) 0.1 0.01 TO-243AA P D = 1.6W 0.8 T C = 25 O C 0.6 0.4 0.2 T A =25 C O 0.001 1 10 100 0 0.001 1000 VDS (Volts) 0.01 0.1 1.0 10 tp (seconds) ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 3 TN2435 Typical Performance Curves (cont.) On Resistance vs. Drain Current BVDSS Variation with Temperature 1.2 20 1.0 0.9 VGS = 4.5V VGS = 3V 16 1.1 RDS(ON) (ohms) BVDSS (Normalized) BV @ 250µA 12 8 VGS = 10V 4 0.8 -50 0 50 100 0 0.0 150 0.5 1.0 1.5 2.0 2.5 3.0 TJ (°C) ID (Amperes) Transfer Characteristics VGS(TH) and RDS(ON) w/ Temperature 2.0 1.4 2.4 1.2 2.0 ID (Amperes) VGS(th) (normalized) TA = -55°C 1.6 TA = 150°C 1.2 0.8 0.4 0.0 2 4 6 8 1.0 1.6 0.8 1.2 0.6 VDS = 25V 0 VGS(th) @ 1mA 0.4 -50 10 0 50 VGS (Volts) 0.4 150 Gate Drive Dynamic Characteristics Capacitance vs. Drain Source Voltage 10 ID = 365mA f = 1MHz 8 225 VDS=10V 150 VGS (volts) C (picofarads) 100 TJ (°C) 300 CISS 75 10 VDS=40V 4 525pF 150pF CRSS 0 6 2 COSS 0 0.8 RDS(ON) @ 10V, 0.75A 20 30 40 0 0.0 50 1.0 2.0 3.0 4.0 5.0 QG (nanocoulombs) VDS (Volts) ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 4 RDS(ON) (normalized) TA = 25°C TN2435 3-Lead TO-243AA (SOT-89) Package Outline (N8) b Symbol Dimensions (mm) b1 A b b1 C D D1 E E1 MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.13 NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 e e1 1.50 BSC 3.00 BSC H L 3.94 0.89 - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version D070908. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com. ©2009 All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TN2435 A051109 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com