Supertex inc. TN2510 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold (2.0V max.) High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications ►► ►► ►► ►► ►► ►► ►► Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information Product Summary Part Number Package Option Packing TN2510N8-G TO-243AA (SOT-89) 2000/Reel -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage VGS(th) (min) (max) 1.5Ω θja 133OC/W Note: Mounted on FR5 Board, 25mm x 25mm x 1.57mm 2.0V SOURCE DRAIN GATE -55 C to +150OC O Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Typical Thermal Resistance 3.0A DRAIN ±20V Operating and storage temperature Doc.# DSFP-TN2510 A062113 ID(ON) (max) Pin Configuration Parameter TO-243AA (SOT-89) RDS(ON) 100V Absolute Maximum Ratings Package BVDSS/BVDGS TO-243AA (SOT-89) Product Marking TN5AW W = Code for week sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-243AA (SOT-89) Supertex inc. www.supertex.com TN2510 Thermal Characteristics ID Package (continuous)† ID Power Dissipation (pulsed) @TA = 25OC 730mA 5.0A 1.6W‡ TO-243AA (SOT-89) IDR† IDRM 730mA 5.0A Notes: † ID (continuous) is limited by max rated Tj . ‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 100 - - V VGS = 0V, ID = 2.0mA VGS(th) Gate threshold voltage 0.6 - 2.0 V VGS = VDS, ID= 1.0mA Change in VGS(th) with temperature - - -4.5 IGSS Gate body leakage - - 100 nA VGS = ± 20V, VDS = 0V - - 10 µA IDSS Zero gate voltage drain current VGS = 0V, VDS = Max Rating - - 1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C ID(ON) On-state drain current 1.2 2.0 - 3.0 6.0 - - - 15 - 1.5 2.0 - 1.0 1.5 - - 0.75 400 800 - ΔVGS(th) RDS(ON) ΔRDS(ON) Static drain-to-source on-state resistance Change in RDS(ON) with temperature GFS Forward transductance CISS Input capacitance - 70 125 COSS Common source output capacitance - 30 70 CRSS Reverse transfer capacitance - 15 25 td(ON) Turn-on delay time - - 10 Rise time - - 10 Turn-off delay time - - 20 Fall time - - 10 Diode forward voltage drop - - Reverse recovery time - 300 tr td(OFF) tf VSD trr Conditions mV/ C VGS = VDS, ID= 1.0mA O A VGS = 5.0V, VDS = 25V VGS = 10V, VDS = 25V VGS = 3.0V, ID = 250mA Ω VGS = 4.5V, ID = 750mA VGS = 10V, ID = 750mA %/ C O VGS = 10V, ID = 750mA mmho VDS = 25V, ID = 1.0A pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 1.5A, RGEN = 25Ω 1.8 V VGS = 0V, ISD = 1.5A - ns VGS = 0V, ISD = 1.5A Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 0V Pulse Generator 10% t(ON) td(ON) VDD OUTPUT 0V Doc.# DSFP-TN2510 A062113 VDD 90% t(OFF) tr td(OFF) OUTPUT RGEN tf 10% 10% 90% RL INPUT D.U.T. 90% 2 Supertex inc. www.supertex.com TN2510 Typical Performance Curves Output Characteristics 10 8.0 8.0 VGS = 10V ID (amperes) ID (amperes) Saturation Characteristics 10 6.0 8V 4.0 6V 2.0 VGS = 10V 6.0 8V 4.0 6V 2.0 4V 4V 3V 0 0 10 20 30 40 3V 0 50 0 2 4 VDS (volts) 8 10 Power Dissipation vs. Ambient Temperature Transconductance vs. Drain Current 2.0 6 VDS (volts) 2.0 VDS = 25V TO-243AA TA = -55OC 1.2 PD (watts) GFS (siemens) 1.6 TA = 25OC 0.8 1.0 TA = 125OC 0.4 0 0 1.0 2.0 3.0 4.0 0 0 5.0 25 50 ID (amperes) ID (amperes) Thermal Resistance (normalized) 1.0 TO-243AA (pulsed) 0.1 TO-243AA (DC) 0.001 10 100 0.8 0.6 0.4 0.2 0 0.001 1000 VDS (volts) Doc.# DSFP-TN2510 A062113 150 Thermal Response Characteristics TO-92 TC = 25OC PD = 0.55W TC = 25OC 0 125 TA ( C) Maximum Rated Safe Operating Area 0.01 100 O 10 1.0 75 0.01 0.1 1.0 10 tP (seconds) 3 Supertex inc. www.supertex.com TN2510 Typical Performance Curves (cont.) 1.1 BVDSS Variation with Temperature On-Resistance vs. Drain Current 10 VGS = 5.0V RDS(ON) (Ω) BVDSS (normalized) 8 1.0 6 VGS = 10V 4 2 10 0 50 100 0 2 4 6 8 10 TJ (OC) ID (amperes) Transfer Characteristics V(th) and RDS Variation with Temperature VGS = 25V 2.0 1.2 TA = -55OC RDS(ON) @5.0V, 0.75A VGS(th) (normalized) 8 ID (amperes) 0 150 6 25OC 4 125OC 1.1 1.6 1.0 1.2 V(th) @ 1.0mA 0.9 0.8 RDS(ON) (normalized) 0.9 -50 2 0.4 0.8 0 0 2 4 6 8 10 -50 0 50 100 150 TJ (OC) VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 10 Gate Drive Dynamic Characteristics f = 1MHz VDS = 10V 8 CISS VGS (volts) C (picofarads) 75 50 6 VDS = 40V 4 190pF COSS 25 2 70pF CRSS 0 0 10 20 30 0 40 VDS (volts) Doc.# DSFP-TN2510 A062113 0 0.5 1.0 1.5 2.0 2.5 QG (nanocoulombs) 4 Supertex inc. www.supertex.com TN2510 3-Lead TO-243AA (SOT-89) Package Outline (N8) D D1 C E H L 1 2 E1 3 b b1 e A e1 Top View Symbol Dimensions (mm) Side View A b b1 C D D1 E E1 e MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00 NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 e1 † 1.50 BSC 3.00 BSC H L 3.94 0.73† - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version F111010. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TN2510 A062113 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com