Supertex inc. TN2425 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications ►► ►► ►► ►► ►► ►► ►► Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Product Summary Part Number Package Option Packing TN2425N8-G TO-243AA (SOT-89) 2000/Reel -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Package θja TO-243AA (SOT-89) 133OC/W Doc.# DSFP-TN2425 B080913 IDSS (max) (min) 3.58Ω 1.5A DRAIN SOURCE DRAIN GATE -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Typical Thermal Resistance 25V RDS(ON) Pin Configuration Absolute Maximum Ratings Operating and storage temperature BVDSS/BVDGS TO-243AA (SOT-89) Product Marking TN4CW W = Code for Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-243AA (SOT-89) Supertex inc. www.supertex.com TN2425 Thermal Characteristics Package (continuous)† (pulsed) ID Power Dissipation @TC = 25OC IDR† IDRM 480mA 1.90A 1.6W‡ 480mA 1.90A TO-243AA (SOT-89) ID Notes: † ID (continuous) is limited by max rated Tj . ‡ TA = 25°C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 250 - - V VGS = 0V, ID = 250µA VGS(th) Gate threshold voltage 0.8 - 2.5 V VGS = VDS, ID= 1.0mA Change in VGS(th) with temperature - - -5.5 IGSS Gate body leakage - - 100 nA - - 10 µA IDSS Zero gate voltage drain current VGS = 0V, VDS = Max Rating mA VDS = 0.8Max Rating, VGS = 0V, TA = 125OC ID(ON) On-state drain current ΔVGS(th) RDS(ON) ΔRDS(ON) - - 1.0 0.8 - - 1.5 - - - - 6.0 - - 5.0 - - 3.5 - - 1.7 500 - - Static drain-to-source on-state resistance Change in RDS(ON) with temperature Ω %/ C Input capacitance - 105 200 COSS Common source output capacitance - 25 100 CRSS Reverse transfer capacitance - 7.0 40 td(ON) Turn-on delay time - 5.0 15 Rise time - 10 25 Turn-off delay time - 25 35 Fall time - 5.0 15 Diode forward voltage drop - - Reverse recovery time - 300 VSD trr VGS = 4.5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 4.5V, ID = 250mA VGS = 10V, ID = 500mA O CISS tf VGS = ± 20V, VDS = 0V VGS = 3.0V, ID = 150mA Forward transductance td(OFF) mV/ C VGS = VDS, ID= 1.0mA O A GFS tr Conditions VGS = 10V, ID = 500mA mmho VDS = 25V, ID = 250mA pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 500mA, RGEN = 25Ω 1.5 V VGS = 0V, ISD = 500mA - ns VGS = 0V, ISD = 500mA Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 0V Pulse Generator 10% t(ON) td(ON) VDD OUTPUT 0V Doc.# DSFP-TN2425 B080913 VDD 90% t(OFF) tr td(OFF) OUTPUT RGEN tf 10% 10% 90% RL INPUT D.U.T. 90% 2 Supertex inc. www.supertex.com TN2425 Typical Performance Curves Output Characteristics Saturation Characteristics 3.0 4 VGS = 10V 8V 6V 3 5V 2 VGS = 10V 8V 6V 5V 2.5 2.0 ID (Amperes) ID (Amperes) 5 4V 4V 1.5 1.0 3V 1 0 0.5 3V 2.5V 0 10 20 30 40 2.5V 0.0 0 50 2 4 VDS (Volts) 1.0 Transconductance vs. Drain Current 10 Power Dissipation vs. Ambient Temperature 2.0 V DS =15V TO-243AA 0.8 1.5 T A =25 O C 0.6 PD (Watts) GFS (siemens) 8 VDS (Volts) T A =-55 O C T A =125 O C 0.4 0.0 0.0 1.0 0.5 0.2 0.5 1.0 1.5 0.0 2.0 0 25 50 Maximum Rated Safe Operating Area 1.0 Thermal Resistance (normalized) TO-243AA (pulsed) TO-243AA (DC) 0.1 0.01 T A =25 O C 0.001 1 10 100 125 150 Thermal Response Characteristics TO-243AA P D = 1.6W T C = 25 O C 0.8 0.6 0.4 0.2 0 0.001 1000 VDS (Volts) Doc.# DSFP-TN2425 B080913 100 O 10 1.0 75 TA ( C) ID (Amperes) ID (amperes) 6 0.01 0.1 1.0 10 tp (seconds) 3 Supertex inc. www.supertex.com TN2425 Typical Performance Curves (cont.) 1.2 BVDSS Variation with Temperature On Resistance vs. Drain Current 10 BV @ 250µA VGS = 4.5V 8.0 RDS(ON) (ohms) 1.0 6.0 4.0 VGS = 10V 0.9 2.0 0 0.8 -50 0 50 100 150 0 1.0 2.0 TJ ( C) Transfer Characteristics 3.0 3.0 4.0 VGS(TH) and RDS(ON) w/ Temperature 2.0 TA = 25OC ID (amperes) VGS(th) (normalized) 1.6 TA = 125OC TA = -55OC 1.5 1.0 1.5 1.4 1.2 1.2 1.0 0.8 0.5 0.0 2 4 6 8 0.9 VGS(th) @ 1mA VDS = 25V 0 0.6 0.4 -50 10 0 VGS (volts) 50 0.6 150 100 TJ ( C) O Capacitance vs. Drain Source Voltage Gate Drive Dynamic Characteristics 10 200 ID = 480mA f = 1MHz 8.0 VDS = 10V 150 CISS VGS (volts) C (picofarads) 1.8 RDS(ON) @ 10V, 0.5A 1.8 2.5 2.0 5.0 ID (amperes) O RDS(ON) (normalized) BVDSS (normalized) 1.1 100 50 VDS = 40V 6.0 453pF 4.0 2.0 COSS 128pF CRSS 0 0 10 20 30 40 0 50 Doc.# DSFP-TN2425 B080913 0 1.0 2.0 3.0 4.0 5.0 QG (nanocoulombs) VDS (volts) 4 Supertex inc. www.supertex.com TN2425 3-Lead TO-243AA (SOT-89) Package Outline (N8) D D1 C E H L 1 2 E1 3 b b1 e A e1 Top View Symbol Dimensions (mm) Side View A b b1 C D D1 E E1 e MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00† NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 1.50 BSC e1 3.00 BSC H L 3.94 0.73† - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version F111010. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TN2425 B080913 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com