VP2106 DATA SHEET (06/27/2014) DOWNLOAD

Supertex inc.
VP2106
P-Channel Enhancement-Mode
Vertical DMOS FETs
General Description
Features
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This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Applications
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Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Ordering Information
Part Number
Package Option
Packing
VP2106N3-G
VP2106N3-G P002
TO-92
1000/Bag
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Product Summary
BVDSS/BVDGS
-60V
RDS(ON)
ID(ON)
(max)
(min)
12Ω
-500mA
VP2106N3-G P003
VP2106N3-G P005
TO-92
Pin Configuration
2000/Reel
VP2106N3-G P013
VP2106N3-G P014
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
BVDSS
Drain-to-gate voltage
BVDGS
Gate-to-source voltage
±20V
Operating and storage temperature
-55 C to +150 C
O
O
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Typical Thermal Resistance
Package
θja
TO-92
132OC/W
Doc.# DSFP-VP2106
C082313
GATE
TO-92
Product Marking
S iV P
2106
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92
Supertex inc.
www.supertex.com
VP2106
Thermal Characteristics
ID
Package
TO-92
(continuous)†
(pulsed)
ID
Power Dissipation
@TC = 25OC
IDR†
IDRM
-250mA
-800mA
1.0W
-250mA
-800mA
Notes:
† ID (continuous) is limited by max rated Tj .
Electrical Characteristics (T
A
= 25OC unless otherwise specified)
Sym
Parameter
Min
Typ
Max
Units
BVDSS
Drain-to-source breakdown voltage
-60
-
-
V
VGS = 0V, ID = -1.0mA
VGS(th)
Gate threshold voltage
-1.5
-
-3.5
V
VGS = VDS, ID= -1.0mA
Change in VGS(th) with temperature
-
5.8
6.5
IGSS
Gate body leakage
-
-1.0
-100
nA
VGS = ± 20V, VDS = 0V
-
-
-10
µA
IDSS
Zero gate voltage drain current
VGS = 0V, VDS = Max Rating
-
-
-1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
ID(ON)
On-state drain current
-0.5
-1.0
-
A
VGS = -10V, VDS = -25V
-
11
15
-
9.0
12
-
0.55
1.0
150
200
-
ΔVGS(th)
RDS(ON)
Static drain-to-source on-state resistance
ΔRDS(ON)
Change in RDS(ON) with temperature
Conditions
mV/OC VGS = VDS, ID= -1.0mA
Ω
%/ C
O
VGS = -5.0V, ID = -100mA
VGS = -10V, ID = -500mA
VGS = -10V, ID = -500mA
GFS
Forward transductance
CISS
Input capacitance
-
45
60
COSS
Common source output capacitance
-
22
30
CRSS
Reverse transfer capacitance
-
3.0
8.0
td(ON)
Turn-on delay time
-
4.0
5.0
Rise time
-
5.0
8.0
Turn-off delay time
-
5.0
9.0
Fall time
-
4.0
8.0
Diode forward voltage drop
-
-1.2
-2.0
V
VGS = 0V, ISD = -500mA
Reverse recovery time
-
400
-
ns
VGS = 0V, ISD = -500mA
tr
td(OFF)
tf
VSD
trr
mmho VDS = -25V, ID = -500mA
pF
ns
VGS = 0V,
VDS = -25V,
f = 1.0MHz
VDD = -25V,
ID = -500mA,
RGEN = 25Ω
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
Pulse
Generator
10%
td(ON)
0V
OUTPUT
VDD
Doc.# DSFP-VP2106
C082313
tr
td(OFF)
90%
10%
RGEN
90%
t(OFF)
t(ON)
D.U.T.
tf
INPUT
OUTPUT
RL
90%
10%
2
VDD
Supertex inc.
www.supertex.com
VP2106
Typical Performance Curves
-1.1
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
20
16
VGS = -5.0V
RDS(ON) (ohms)
BVDSS (normalized)
12
-1.0
8.0
VGS = -10V
6.0
4.0
2.0
-1.0
0
50
100
0
150
-0.2
-0.4
-0.6
-0.8
-1.0
ID (amperes)
Transfer Characteristics
V(th) and RDS Variation with Temperature
2.0
VDS = -25V
1.4
VGS(th) (normalized)
TA = -55OC
-0.8
ID (amperes)
0
Tj (OC)
-0.6
25OC
-0.4
125OC
-0.2
1.6
RDS(ON) @ -10V. 0.5A
1.2
1.2
1.0
0.8
V(th) @ 1.0mA
0.8
RDS(ON) (normalized)
-0.9
-50
0.4
0.6
0
0
-2.0
-4.0
-6.0
VGS (volts)
-8.0
-50
-10
0
50
100
0
150
Tj ( C)
O
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
-10
100
f = 1.0MHz
-8.0
VDS = -10V
VGS (volts)
C (picofarads)
75
50
VDS = -40V
-6.0
101 pF
-4.0
CISS
25
-2.0
COSS
35 pF
CRSS
0
0
-10
-20
-30
0
0
-40
Doc.# DSFP-VP2106
C082313
1.0
2.0
QG (nanocoulombs)
VDS (volts)
3
Supertex inc.
www.supertex.com
VP2106
Typical Performance Curves (cont.)
Output Characteristics
-2.0
Saturation Characteristics
-1.0
VGS = -10V
-9V
-0.8
-1.2
ID (amperes)
ID (amperes)
-1.6
VGS = -10V
-9V
-8V
-0.8
-8V
-0.6
-7V
-0.4
-6V
-7V
-6V
-0.4
-5V
-0.2
-5V
0
-4V
-4V
0
-10
-20
-30
-40
0
-50
VDS (volts)
250
-3V
0
-4.0
-6.0
-8.0
-10
VDS (volts)
Power Dissipation vs. Ambient Temperature
Transconductance vs. Drain Current
VDS = 25V
1.0
TA = -55 C
O
200
TO-92
25OC
GFS (millisiemens)
-2.0
PD (watts)
150
125OC
100
0.5
50
0
0
-0.2
-0.4
-0.6
-0.8
0
-10
0
25
50
ID (amperes)
75
100
125
150
TA (OC)
Maximum Rated Safe Operating Area
-1.0
1.0
Thermal Response Characteristics
Thermal Resistance (normalized)
TO-92 (pulsed)
TO-92 (DC)
ID (amperes)
-0.1
-0.01
-0.001
-0.1
Doc.# DSFP-VP2106
C082313
TA = 25OC
-1.0
VDS (volts)
-10
0.8
0.6
0.4
0
0.001
-100
TO-92
PD = 1.0W
TA = 25OC
0.2
0.01
0.1
1.0
10
tP (seconds)
4
Supertex inc.
www.supertex.com
VP2106
3-Lead TO-92 Package Outline (N3)
D
A
Seating
Plane
1
2
3
L
c
b
e1
e
Side View
Front View
E1
E
1
3
2
Bottom View
Symbol
Dimensions
(inches)
A
b
c
D
E
E1
e
e1
L
MIN
.170
.014†
.014†
.175
.125
.080
.095
.045
.500
NOM
-
-
-
-
-
-
-
-
-
MAX
.210
.022†
.022†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
Supertex inc.
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-VP2106
C082313
5
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com