TP0620 DATA SHEET (06/27/2014) DOWNLOAD

Supertex inc.
TP0620
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
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General Description
Low threshold (-2.4V max.)
High input impedance
Low input capacitance (85pF typical)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Applications
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Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Part Number
TP0620N3-G
Product Summary
Package Option
Packing
3-Lead TO-92
1000/Bag
3-Lead TO-92
2000/Reel
TP0620N3-G P002
TP0620N3-G P003
TP0620N3-G P005
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
BVDSS/BVDGS
-200V
RDS(ON)
ID(ON)
(max)
(min)
12Ω
-0.75A
VGS(th)
(max)
-2.4V
Pin Configuration
TP0620N3-G P013
TP0620N3-G P014
DRAIN
SOURCE
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
TO-92
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
BVDSS
Drain-to-gate voltage
BVDGS
Gate-to-source voltage
Operating and storage temperature
-55 C to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Doc.# DSFP-TP0620
C081313
Product Marking
SiTP
0 6 2 0
YYWW
±20V
O
GATE
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92
Typical Thermal Resistance
Package
θja
TO-92
132OC/W
Supertex inc.
www.supertex.com
TP0620
Thermal Characteristics
ID
Package
TO-92
(continuous)†
ID
Power Dissipation
(pulsed)
@TA = 25OC
-175mA
-800mA
1.0W
IDR†
IDRM
-175mA
-800mA
Notes:
† ID (continuous) is limited by max rated Tj .
Electrical Characteristics (T = 25 C unless otherwise specified)
A
O
Sym
Parameter
Min
Typ
Max
Units
BVDSS
Drain-to-source breakdown voltage
-200
-
-
V
VGS = 0V, ID = -2.0mA
VGS(th)
Gate threshold voltage
-1.0
-
-2.4
V
VGS = VDS, ID= -1.0mA
Change in VGS(th) with temperature
-
-
-4.5
Gate body leakage
-
-
-100
nA
VGS = ± 20V, VDS = 0V
-
-
-10
µA
VGS = 0V, VDS = Max Rating
-
-
-1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
-0.25
-
-
-0.75
-
-
-
9.0
15
-
7.0
12
-
-
1.7
100
150
-
ΔVGS(th)
IGSS
IDSS
Zero gate voltage drain current
ID(ON)
ON-state drain current
RDS(ON)
ΔRDS(ON)
Static drain-to-source on-state resistance
Change in RDS(ON) with temperature
Ω
%/ C
O
Forward transductance
CISS
Input capacitance
-
85
150
COSS
Common source output capacitance
-
30
85
CRSS
Reverse transfer capacitance
-
10
35
td(ON)
Turn-on delay time
-
-
10
Rise time
-
-
15
Turn-off delay time
-
-
20
Fall time
-
-
16
Diode forward voltage drop
-
-
Reverse recovery time
-
300
tr
td(OFF)
tf
VSD
trr
mV/OC VGS = VDS, ID= -1.0mA
A
GFS
Conditions
VGS = -5.0V, VDS = -25V
VGS = -10V, VDS = -25V
VGS = -5.0V, ID = -100mA
VGS = -10V, ID = -200mA
VGS = -10V, ID = -200mA
mmho VDS = -25V, ID = -400mA
pF
VGS = 0V,
VDS = -25V,
f = 1.0MHz
ns
VDD = -25V,
ID = -750mA,
RGEN = 25Ω
-1.8
V
VGS = 0V, ISD = -500mA
-
ns
VGS = 0V, ISD = -500mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
Pulse
Generator
10%
td(ON)
0V
OUTPUT
VDD
Doc.# DSFP-TP0620
C081313
tr
td(OFF)
90%
10%
RGEN
90%
t(OFF)
t(ON)
D.U.T.
tf
INPUT
OUTPUT
RL
90%
10%
2
VDD
Supertex inc.
www.supertex.com
TP0620
Typical Performance Curves
BVDSS Variation with Temperature
1.10
VGS = -5.0V
16
RDS(ON) (ohms)
BVDSS (normalized)
On-Resistance vs. Drain Current
20
1.05
1.00
0.95
12
8
4
0.90
-50
0
50
100
0
150
0
-0.2
-0.4
Tj (OC)
-2.0
1.66
TA = -55OC
RDS(ON) @ -10V, -0.2A
VGS(th) (normalized)
ID (amperes)
-1.0
1.2
VDS = -25V
TA = 125OC
-1.0
1.1
1.33
1.0
1.00
0.9
0.66
V(th) @ -1.0mA
0.8
-4
-0.8
V(th) and RDS Variation with Temperature
Transfer Characteristics
-2
-0.6
ID (amperes)
TA = 25OC
0
0
VGS = -10V
-6
-8
0.7
-50
-10
0
50
VGS (volts)
100
RDS(ON) (normalized)
1.15
0.33
0
150
Tj (OC)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
-10
200
f = 1MHz
-8
VDS = -10V
100
VGS (volts)
C (picofarads)
150
CISS
50
170pf
-6
VDS = -40V
-4
-2
45pf
COSS
0
0
-10
-20
-30
CRSS
0
-40
0.5
1.0
1.5
2.0
2.5
QG (nanocoulombs)
VDS (volts)
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Supertex inc.
www.supertex.com
TP0620
Typical Performance Curves (cont.)
Output Characteristics
-2.0
Saturation Characteristics-8V
-1.0
VGS = -10V
VGS = -10V
-0.8
ID (amperes)
ID (amperes)
-1.6
-1.2
-8V
-0.8
-6V
-0.6
-0.4
-6V
-0.4
-4V
0
0
-20
-30
-40
0
-50
0
-2
-4
-6
-8
-10
VDS (volts)
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Case Temperature
2.0
VDS = -25V
200
TA = -55OC
150
TA = 25OC
PD (watts)
GFS (millisiemens)
250
-10
-4V
-0.2
TA = 125OC
100
TO-92
1.0
50
0
0
-0.2
-0.4
-0.6
-0.8
0
-1.0
0
25
50
ID (amperes)
Maximum Rated Safe Operating Area
1.0
Thermal Resistance (normalized)
ID (amperes)
-10
-1.0
TO-92 (DC)
-0.1
TC = 25OC
-0.01
-1.0
-10
-100
100
125
150
Thermal Response Characteristics
0.8
0.6
0.4
TO-92
PD = 1W
TC = 25OC
0.2
0
0.001
-1000
0.01
0.1
1.0
10
tP (seconds)
VDS (volts)
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TC (OC)
4
Supertex inc.
www.supertex.com
TP0620
3-Lead TO-92 Package Outline (N3)
D
A
Seating
Plane
1
2
3
L
c
b
e1
e
Side View
Front View
E1
E
1
3
2
Bottom View
Symbol
Dimensions
(inches)
A
b
c
D
E
E1
e
e1
L
MIN
.170
.014†
.014†
.175
.125
.080
.095
.045
.500
NOM
-
-
-
-
-
-
-
-
-
MAX
.210
.022†
.022†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
Supertex inc.
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-TP0620
C081313
5
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com