VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) TO-92 TO-236AB* Die† -60V 12Ω -0.5A VP2106N3 — — -100V 12Ω -0.5A — VP2110K1 VP2110ND Product marking for SOT-23: P1A❋ where ❋ = 2-week alpha date code MIL visual screening available. *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Applications ❏ Motor controls Package Options ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) D Absolute Maximum Ratings G S Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* TO-236AB SGD TO-92 (SOT-23) top view -55°C to +150°C 300°C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VP2106/VP2110 Thermal Characteristics Package ID (continuous)* ID (pulsed) Power Dissipation @ TA = 25°C θjc θja °C/W °C/W IDR* IDRM TO-236AB -120mA -400mA 0.36W 200 350 -120mA -400mA TO-92 -0.25A -0.8A 0.74W 125 170 -0.25A -0.8A * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) BVDSS Parameter Min Drain-to-Source Breakdown Voltage VP2110 -100 VP2106 -60 VGS(th) Gate Threshold Voltage ∆V GS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current ID(ON) ON-State Drain Current RDS(ON) Static Drain-to-Source ON-State Resistance Typ Conditions ID = -1.0mA, VGS = 0V -3.5 V VGS = VDS, ID = -1.0mA 5.8 6.5 mV/°C ID = -1.0mA, VGS = VDS -1.0 -100 nA VGS = ±20V, VDS = 0V -10 µA VGS = 0V, VDS = Max Rating -1 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C -1.0 A 11 15 9.0 12 0.55 1.0 ∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance 45 60 COSS Common Source Output Capacitance 22 30 CRSS Reverse Transfer Capacitance 3 8 td(ON) Turn-ON Delay Time 4 5 tr Rise Time 5 8 td(OFF) Turn-OFF Delay Time 5 9 tf Fall Time 4 8 VSD Diode Forward Voltage Drop -1.2 -2.0 trr Reverse Recovery Time 400 150 Unit V -1.5 -0.50 Max 200 Ω %/°C m Ω Symbol VGS = -10V, VDS = -25V VGS = -5V, ID = -0.1A VGS = -10V, ID = -0.5A VGS = -10V, ID = -0.5A VDS = -25V, ID = -0.5A pF VGS = 0V, VDS = -25V f = 1 MHz ns VDD = -25V ID = -0.5A RGEN = 25Ω V ISD = -0.5A, VGS = 0V ns ISD = -0.5A, VGS = 0V Notes: 1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% PULSE GENERATOR INPUT 90% -10V t(ON) td(ON) Rgen t(OFF) td(OFF) tr tF D.U.T. 0V 90% OUTPUT INPUT 90% RL OUTPUT VDD 10% 10% VDD 2 VP2106/VP2110 Typical Performance Curves Output Characteristics Saturation Characteristics -2.0 -1.0 -1.6 -0.8 VGS = -10V -1.2 ID (amperes) ID (amperes) -9V VGS = -10V -9V -0.8 -8V -8V -0.6 -7V -0.4 -6V -7V -0.4 -5V -0.2 -6V -4V -5V -4V 0 0 -10 -20 -30 -40 -3V -0 0 -50 -4 -6 -8 -10 VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature 1.0 250 TA= -55°C VDS = 25V 200 TO-92 TA = 25°C 150 PD (watts) GFS (millisiemens) -2 VDS (volts) TA = 125°C 100 0.5 TO-236AB 50 0 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 25 50 ID (amperes) 100 125 150 Thermal Response Characteristics Maximum Rated Safe Operating Area -1.0 1.0 TO-236AB (pulsed) Thermal Resistance (normalized) TO-92 (pulsed) TO-92 (DC) ID (amperes) 75 TA (°C) -0.1 TO-236AB (DC) -0.01 TA = 25°C -0.001 -0.1 -1.0 -10 0.8 0.6 0.4 VDS (volts) TO-92 P D = 1.0W 0.2 T A = 25°C 0 0.001 -100 TO-236AB P D = 0.36W T A = 25°C 0.01 0.1 tp (seconds) 3 1.0 10 VP2106/VP2110 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current -1.1 20 VGS = -5V RDS(ON) (ohms) BVDSS (normalized) 16 -1.0 12 VGS = -10V 8 4 -0.9 0 -50 0 50 100 150 0 -0.2 -0.4 -0.6 -0.8 -1.0 ID (amperes) Tj (°C) Transfer Characteristics V(th) and RDS Variation with Temperature 2.0 -1.0 1.4 TA = -55°C RDS(ON) @ -10V, 0.5A VGS(th) (normalized) ID (amperes) -0.8 -0.6 25°C -0.4 125°C 1.6 1.2 1.2 1.0 0.8 0.8 V(th)@ 1mA -0.2 RDS(ON) (normalized) VDS = -25V 0.4 0.6 0 0 0 -2 -4 -6 -8 -10 -50 0 VGS (volts) 50 100 150 Tj (°C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics -10 100 f = 1MHz VDS = -10V -8 VGS (volts) C (picofarads) 75 50 CISS VDS = -40V -6 101 pF -4 25 35 pF -2 COSS CRSS 0 0 0 -10 -20 -30 -40 0 1.0 2.0 QG (nanocoulombs) VDS (volts) 11/12/01 ©2001 Supertex Inc. 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