VP2450 DATA SHEET (06/27/2014) DOWNLOAD

Supertex inc.
VP2450
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
►► Free from secondary breakdown
►► Low power drive requirement
►► Ease of paralleling
►► Low CISS and fast switching speeds
►► High input impedance and high gain
►► Excellent thermal stability
►► Integral source-to-drain diode
Applications
►► Motor controls
►► Converters
►► Amplifiers
►► Switches
►► Power supply circuits
►► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Ordering Information
Part Number
VP2450N3-G
Product Summary
Package Option
Packing
3-Lead TO-92
1000/Bag
3-Lead TO-92
2000/Reel
VP2450N3-G P002
VP2450N3-G P003
VP2450N3-G P005
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
BVDSS/BVDGS
-500V
RDS(ON)
ID(ON)
(max)
(min)
30Ω
-200mA
-0.4V
DRAIN
VP2450N3-G P014
TO-243AA (SOT-89)
2000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Value
Drain-to-source voltage
BVDSS
Drain-to-gate voltage
BVDGS
Gate-to-source voltage
±20V
Operating and storage temperature
-55 C to +150 C
O
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Typical Thermal Resistance
Package
θja
TO-92
132OC/W
TO-243AA (SOT-89)
133OC/W
SOURCE
DRAIN
GATE
GATE
Parameter
O
DRAIN
SOURCE
Absolute Maximum Ratings
Doc.# DSFP-VP2450
B082613
(max)
Pin Configuration
VP2450N3-G P013
VP2450N3-G
VGS(th)
TO-92
TO-243AA (SOT-89)
Product Marking
S iV P
2 4 5 0
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92
VP4EW
W = Code for week sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89)
Supertex inc.
www.supertex.com
VP2450
Thermal Characteristics
(continuous)†
ID
ID
Power Dissipation
(pulsed)
@TA = 25OC
TO-92
-100mA
-300mA
TO-243AA (SOT-89)
-160mA
-800mA
Package
†
‡
IDR†
IDRM
0.74W
-100mA
-300mA
1.6‡
-160mA
-800mA
ID (continuous) is limited by max rated Tj .
Mounted on FR5 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics (T
A
= 25OC unless otherwise specified)
Sym
Parameter
Min
Typ
Max
Units
BVDSS
Drain-to-source breakdown voltage
-500
-
-
V
VGS = 0V, ID = -250µA
VGS(th)
Gate threshold voltage
-1.5
-
-3.5
V
VGS = VDS, ID= -1.0mA
Change in VGS(th) with temperature
-
-
-4.8
Gate body leakage
-
-
-100
nA
VGS = ± 20V, VDS = 0V
-
-
-10
µA
VGS = 0V, VDS = Max Rating
-
-
-1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
-75
-
-
-200
-
-
-
-
35
-
-
30
-
-
0.75
150
320
-
ΔVGS(th)
IGSS
IDSS
Zero gate voltage drain current
ID(ON)
On-state drain current
RDS(ON)
ΔRDS(ON)
Static drain-to-source on-state resistance
Change in RDS(ON) with temperature
GFS
Forward transductance
CISS
Input capacitance
-
-
190
COSS
Common source output capacitance
-
-
75
CRSS
Reverse transfer capacitance
-
-
20
td(ON)
Turn-on delay time
-
-
10
Rise time
-
-
25
Turn-off delay time
-
-
45
Fall time
-
-
25
Diode forward voltage drop
-
-
Reverse recovery time
-
300
tr
td(OFF)
tf
VSD
trr
Conditions
mV/ C VGS = VDS, ID= -1.0mA
O
mA
VGS = -4.5V, VDS = -15V
VGS = -10V, VDS = -15V
VGS = -4.5V, ID = -50mA
Ω
VGS = -10V, ID = -100mA
%/ C
O
VGS = -10V, ID = -100mA
mmho VDS = -15V, ID = -100mA
pF
VGS = 0V,
VDS = -25V,
f = 1.0MHz
ns
VDD = -25V,
ID = -200mA,
RGEN = 25Ω
-1.8
V
VGS = 0V, ISD = -100mA
-
ns
VGS = 0V, ISD = -100mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
Pulse
Generator
10%
td(ON)
0V
OUTPUT
VDD
Doc.# DSFP-VP2450
B082613
tr
td(OFF)
90%
10%
RGEN
90%
t(OFF)
t(ON)
D.U.T.
tf
INPUT
OUTPUT
RL
90%
10%
VDD
2
Supertex inc.
www.supertex.com
VP2450
Typical Performance Curves
On Resistance vs. Drain Current
80
1.1
60
RDS(ON) (ohms)
BVDSS (normalized)
BVDSS Variation with Temperature
1.2
1.0
0.9
40
VGS = -4.5V
20
VGS = -10V
0.8
-50
0
50
100
0
150
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Tj (OC)
ID (amperes)
Transfer Characteristics
VGS(th) and RDS(ON) Variation w/ Temperature
-1.2
TA = -55OC
VDS = -20V
1.5
2.2
1.3
1.8
VGS(th) (normalized)
ID (amperes)
25OC
-0.8
-0.6
-0.4
125OC
VTH @ -1.0mA
1.1
0.9
1.0
-0.2
RDS(ON) @ -10V, -0.1A
0.7
0
0
-1.0
-2.0
-3.0
-4.0
-50
VGS (volts)
0
50
-10
150
ID = -100mA
f = 1.0MHz
-8.0
VDS = -20V
VGS (volts)
300
C (picofarads)
100
Gate Drive Dynamic Characteristics
Capacitance vs. Drain Source Voltage
200
VDS = -40V
-6.0
-4.0
CISS
100
-2.0
COSS
CRSS
0
-10
-20
-30
0
-40
VDS (volts)
Doc.# DSFP-VP2450
B082613
0.6
Tj (OC)
400
0
1.4
RDS(ON) (normalized)
-1.0
3
0
1.0
2.0
QG (nanocoulombs)
3.0
Supertex inc.
www.supertex.com
VP2450
Typical Performance Curves (cont.)
Saturation Characteristics
Output Characteristics
-1.0
-0.6
VGS = -10V
VGS = -4.5V
-0.8
VGS = -10V
VGS = -6.0V
-0.5
VGS = -6.0V
ID (amperes)
ID (amperes)
-0.4
-0.6
VGS = -3.5V
-0.4
-0.2
0
VGS = -4.5V
-0.3
VGS = -3.5V
-0.2
-0.1
0
-10
-20
-30
-40
0
0
-50
-2.0
-4.0
VDS (volts)
1.0
-8.0
-10
Power Dissipation vs Case Temperature
Transconductance vs Drain Current
2.0
VDS = -20V
TO-243AA
0.8
1.5
0.6
PD (watts)
TA = -55OC
GFS (siemens)
-6.0
VDS (volts)
25OC
0.4
125OC
TO-92
1.0
0.5
0.2
0
0
-100
-200
-300
ID (milliamperes)
-400
0
-500
1.0
TO-243AA (pulsed)
Thermal Resistance (normalized)
TO-92 (pulsed)
ID (amperes)
TO-243AA (DC)
-0.1
TO-92 (DC)
-0.01
TA = 25OC
-0.001
-1.0
-10
-100
50
75
100
125
150
Thermal Response Characteristics
0.8
TO-243AA
TA = 25OC
PD = 1.6W
0.6
0.4
0.2
0
-1000
VDS (volts)
Doc.# DSFP-VP2450
B082613
25
TC (OC)
Maximum Rated Safe Operating Area
-1.0
0
TO-92
TC = 25OC
PD = 1.0W
0.001
0.01
0.1
1.0
10
tP (seconds)
4
Supertex inc.
www.supertex.com
VP2450
3-Lead TO-92 Package Outline (N3)
D
A
Seating
Plane
1
2
3
L
c
b
e1
e
Side View
Front View
E1
E
1
3
2
Bottom View
Symbol
Dimensions
(inches)
A
b
c
D
E
E1
e
e1
L
MIN
.170
.014†
.014†
.175
.125
.080
.095
.045
.500
NOM
-
-
-
-
-
-
-
-
-
MAX
.210
.022†
.022†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
Doc.# DSFP-VP2450
B082613
5
Supertex inc.
www.supertex.com
VP2450
3-Lead TO-243AA (SOT-89) Package Outline (N8)
D
D1
C
E H
L
1
2
E1
3
b
b1
e
A
e1
Top View
Symbol
Dimensions
(mm)
Side View
A
b
b1
C
D
D1
E
E1
e
MIN
1.40
0.44
0.36
0.35
4.40
1.62
2.29
2.00†
NOM
-
-
-
-
-
-
-
-
MAX
1.60
0.56
0.48
0.44
4.60
1.83
2.60
2.29
1.50
BSC
e1
3.00
BSC
H
L
3.94
0.73†
-
-
4.25
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
† This dimension differs from the JEDEC drawing
Drawings not to scale.
Supertex Doc. #: DSPD-3TO243AAN8, Version F111010.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
Supertex inc.
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-VP2450
B082613
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com