VP3203 DATA SHEET (06/27/2014) DOWNLOAD

Supertex inc.
VP3203
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
►► Free from secondary breakdown
►► Low power drive requirement
►► Ease of paralleling
►► Low CISS and fast switching speeds
►► High input impedance and high gain
►► Excellent thermal stability
►► Integral source-to-drain diode
Applications
►► Motor controls
►► Converters
►► Amplifiers
►► Switches
►► Power supply circuits
►► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Ordering Information
Part Number
VP3203N3-G
Product Summary
Package Option
Packing
3-Lead TO-92
1000/Bag
3-Lead TO-92
2000/Reel
VP3203N3-G P002
VP3203N3-G P003
VP3203N3-G P005
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
BVDSS/BVDGS
-30V
(min)
0.6Ω
-4.0A
DRAIN
VP3203N3-G P014
TO-243AA (SOT-89)
2000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Value
Drain-to-source voltage
BVDSS
Drain-to-gate voltage
BVDGS
Gate-to-source voltage
±20V
-55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Typical Thermal Resistance
Package
θja
TO-92
132OC/W
TO-243AA (SOT-89)
133OC/W
SOURCE
DRAIN
GATE
GATE
Parameter
Operating and storage temperature
DRAIN
SOURCE
Absolute Maximum Ratings
Doc.# DSFP-VP3203
B082613
ID(ON)
(max)
Pin Configuration
VP3203N3-G P013
VP3203N3-G
RDS(ON)
TO-92
TO-243AA (SOT-89)
Product Marking
S iV P
3 2 0 3
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92
VP2LW
W = Code for week sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89)
Supertex inc.
www.supertex.com
VP3203
Thermal Characteristics
(continuous)†
ID
ID
Power Dissipation
(pulsed)
@TA = 25OC
TO-92
-650mA
-4.0A
TO-243AA (SOT-89)
-1100mA
-4.0A
Package
†
‡
IDR†
IDRM
0.74W
-650mA
-4.0A
1.6‡
-1100mA
-4.0A
ID (continuous) is limited by max rated Tj .
Mounted on FR5 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics (T
A
= 25OC unless otherwise specified)
Sym
Parameter
Min
Typ
Max
Units
BVDSS
Drain-to-source breakdown voltage
-30
-
-
V
VGS = 0V, ID = -10mA
VGS(th)
Gate threshold voltage
-1.0
-
-3.5
V
VGS = VDS, ID= -10mA
Change in VGS(th) with temperature
-
-
-5.5
IGSS
Gate body leakage
-
-1.0
-100
nA
VGS = ± 20V, VDS = 0V
-
-
-10
µA
IDSS
Zero gate voltage drain current
VGS = 0V, VDS = Max Rating
-
-
-1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
ID(ON)
On-state drain current
-
-14
-
A
TO-92
-
-
1.0
SOT-89
-
-
1.0
TO-92
-
-
0.6
SOT-89
-
-
0.6
-
-
1.0
1000
2000
-
ΔVGS(th)
RDS(ON)
ΔRDS(ON)
Static drain-to-source on-state
resistance
Change in RDS(ON) with temperature
GFS
Forward transductance
CISS
Input capacitance
-
200
300
COSS
Common source output capacitance
-
100
120
CRSS
Reverse transfer capacitance
-
45
60
td(ON)
Turn-on delay time
-
-
10
Rise time
-
-
15
Turn-off delay time
-
-
25
Fall time
-
-
25
Diode forward voltage drop
-
-
Reverse recovery time
-
300
tr
td(OFF)
tf
VSD
trr
Conditions
mV/OC VGS = VDS, ID= -10mA
VGS = -10V, VDS = -5.0V
VGS = -4.5V, ID = -1.5A
VGS = -4.5V, ID = -750mA
Ω
VGS = -10V, ID = -3.0A
VGS = -10V, ID = -1.5A
%/OC
VGS = -10V, ID = -1.5A
mmho VDS = -25V, ID = -2.0A
pF
VGS = 0V,
VDS = -25V,
f = 1.0MHz
ns
VDD = -25V,
ID = -2.0A,
RGEN = 10Ω
-1.6
V
VGS = 0V, ISD = -1.5A
-
ns
VGS = 0V, ISD = -1.0A
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
Pulse
Generator
10%
td(ON)
0V
OUTPUT
VDD
Doc.# DSFP-VP3203
B082613
tr
td(OFF)
90%
10%
RGEN
90%
t(OFF)
t(ON)
D.U.T.
tf
INPUT
OUTPUT
RL
90%
10%
2
VDD
Supertex inc.
www.supertex.com
VP3203
Typical Performance Curves
BVDSS Variation with Temperature
2.0
On-Resistance vs. Drain Current
1.1
RDS(ON) (Ω)
BVDSS (normalized)
1.6
1.0
VGS = -5V
1.2
VGS = -10V
0.8
0.4
0.9
-50
100
0
0
150
-4.0
-8.0
-12
-16
-20
Tj (OC)
ID (amperes)
Transfer Characteristics
V(th) and RDS Variation with Temperature
1.4
TA = -55OC
25OC
-6.0
125OC
-4.0
1.4
RDS(ON) @ -10V, -3A
1.2
1.2
1.0
1.0
V(th) @ -10mA
0.8
0.8
RDS(ON) (normalized)
VDS = -25V
-8.0
ID (amperes)
50
VGS(th) (normalized)
-10
0
-2.0
0.6
0.6
0
0
-2.0
-4.0
-6.0
-8.0
VGS (volts)
-10
-50
0
50
100
150
Tj (OC)
Gate Drive Dynamic Characteristics
Capacitance vs. Drain-to-Source Voltage
300
-10
f = 1MHz
-8.0
VDS = -10V
CISS
VGS (volts)
C (picofarads)
225
150
VDS = -20V
-6.0
-4.0
335pF
COSS
75
-2.0
200pF
CRSS
0
-0
Doc.# DSFP-VP3203
B082613
-10
-20
VDS (volts)
0
-30
3
0
1.0
2.0
3.0
4.0
QG (nanocoulombs)
5.0
Supertex inc.
www.supertex.com
VP3203
Typical Performance Curves (cont.)
Output Characteristics
-20
VGS = -10V
-8V
-12
-8.0
VGS = -10V
-16
ID (amperes)
ID (amperes)
-16
Saturation Characteristics
-20
-6V
-8V
-12
-8.0
-6V
-4.0
-4.0
-4V
-4V
0
-3V
-3V
0
-5.0
-10
-15
-20
-25
0
-30
-6.0
-8.0
-10
Transconductance vs. Drain Current
Power Dissipation vs. Ambient Temperature
20
VDS = -25V
3.0
TA = 125OC
TA = 25 C
O
2.0
TA = -55OC
8.0
4.0
0
-1.0
-2.0
-3.0
ID (amperes)
-4.0
0
-5.0
Thermal Resistance (normalized)
TO-92 (pulsed)
TO-243AA(DC)
TO-92 (DC)
-0.1
TA = 25OC
-10
VDS (volts)
50
75
100
125
150
Thermal Response Characteristics
TO-243AA (pulsed)
-1.0
25
1.0
-10
-0.01
-0.1
0
TA (OC)
Maximum Rated Safe Operating Area
-1.0
12
TO-92
1.0
0
TO-243AA
16
PD (watts)
GFS (siemens)
-4.0
VDS (volts)
4.0
ID (amperes)
-2.0
VDS (volts)
5.0
Doc.# DSFP-VP3203
B082613
0
0.8
0.4
0.2
0
-100
TO-243AA
PD = 1.6W
TA = 25OC
0.6
TO-92
PD = 1W
TC = 25OC
0.001
0.01
0.1
1.0
10
tp (seconds)
4
Supertex inc.
www.supertex.com
VP3203
3-Lead TO-92 Package Outline (N3)
D
A
Seating
Plane
1
2
3
L
c
b
e1
e
Side View
Front View
E1
E
1
3
2
Bottom View
Symbol
Dimensions
(inches)
A
b
c
D
E
E1
e
e1
L
MIN
.170
.014†
.014†
.175
.125
.080
.095
.045
.500
NOM
-
-
-
-
-
-
-
-
-
MAX
.210
.022†
.022†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
Doc.# DSFP-VP3203
B082613
5
Supertex inc.
www.supertex.com
VP3203
3-Lead TO-243AA (SOT-89) Package Outline (N8)
D
D1
C
E H
L
1
2
E1
3
b
b1
e
A
e1
Top View
Symbol
Dimensions
(mm)
Side View
A
b
b1
C
D
D1
E
E1
e
MIN
1.40
0.44
0.36
0.35
4.40
1.62
2.29
2.00
NOM
-
-
-
-
-
-
-
-
MAX
1.60
0.56
0.48
0.44
4.60
1.83
2.60
2.29
e1
†
1.50
BSC
3.00
BSC
H
L
3.94
0.73†
-
-
4.25
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
† This dimension differs from the JEDEC drawing
Drawings not to scale.
Supertex Doc. #: DSPD-3TO243AAN8, Version F111010.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
Supertex inc.
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-VP3203
B082613
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com