VN2460 DATA SHEET (08/20/2013) DOWNLOAD

Supertex inc.
VN2460
N-Channel Enhancement-Mode
Vertical DMOS FET
General Description
Features
►► Free from secondary breakdown
►► Low power drive requirement
►► Ease of paralleling
►► Low CISS and fast switching speeds
►► Excellent thermal stability
►► Integral source-drain diode
►► High input impedance and high gain
Applications
►► Motor controls
►► Converters, amplifiers, and switches
►► Power supply circuits
►► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of
bipolar transistors and with the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Product Summary
Ordering Information
Part Number
Package Options
Packing
VN2460N3-G
TO-92
1000/Bag
VN2460N3-G P002
TO-92
2000/Reel
VN2460N3-G P003
TO-92
2000/Reel
VN2460N3-G P005
TO-92
2000/Reel
VN2460N3-G P013
TO-92
2000/Reel
VN2460N3-G P014
TO-92
2000/Reel
VN2460N8-G
TO-243AA (SOT-89)
2000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package
Refer to ‘P0xx’ Tape & Reel Specs for P002, P003, P005, P013, and P014 TO-92
Taping Specifications and Winding Styles
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Absolute Maximum Ratings
600V
RDS(ON)
ID(ON)
(max)
(min)
20Ω
2500mA
Pin Configuration
DRAIN
DRAIN
SOURCE
SOURCE
DRAIN
GATE
GATE
TO-92
Parameter
Value
Drain-to-source voltage
BVDSS
Drain-to-gate voltage
BVDGS
Gate-to-source voltage
±20V
Operating and storage temperature
BVDSS/BVDGS
-55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Typical Thermal Resistance
Package
θja
TO-92
132OC/W
TO-243AA (SOT-89)
133OC/W*
TO-243AA (SOT-89)
Product Marking
S iV N
2 4 6 0
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92
VN4FW
W = Code for week sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89)
* Mounted on FR5 Board, 25mm x 25mm x 1.57mm
Doc.# DSFP-VN2460
B082013
Supertex inc.
www.supertex.com
VN2460
Thermal Characteristics
(continuous)†
ID
(pulsed)
ID
Power Dissipation
TO-92
160mA
500mA
TO-243AA (SOT-89)
200mA
600mA
Package
IDR†
IDRM
1.0W
160mA
500mA
1.6W
200mA
600mA
@TA = 25OC
‡
Notes:
† ID (continuous) is limited by max rated Tj .
‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm.
Electrical Characteristics (T = 25°C unless otherwise specified)
A
Sym
Parameter
Min
Typ
Max
Units
BVDSS
Drain-to-source breakdown voltage
600
-
-
V
VGS = 0V, ID = 2.0mA
VGS(th)
Gate threshold voltage
1.5
-
4.0
V
VGS = VDS, ID = 2.0mA
Change in VGS(th) with temperature
-
-
-5.5
mV/ C
VGS = VDS, ID = 2.0mA
Gate body leakage current
-
-
100
nA
VGS = ±20V, VDS = 0V
VGS = 0V,
VDS = Max Rating
ΔVGS(th)
IGSS
IDSS
Zero gate voltage drain current
ID(ON)
On-state drain current
RDS(ON)
ΔRDS(ON)
-
-
10
µA
-
-
1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
0.25
-
-
A
VGS = 10V, VDS = 25V
-
-
25
-
-
20
-
-
1.7
%/ C
VGS = 10V, ID = 100mA
50
-
-
mmho
VDS = 25V, ID = 100mA
Static drain-to-source on-state resistance
Change in RDS(ON) with temperature
GFS
Forward transconductance
CISS
Input capacitance
-
-
150
COSS
Common source output capacitance
-
-
50
CRSS
Reverse transfer capacitance
-
-
25
td(ON)
Turn-on delay time
-
-
10
Rise time
-
-
10
Turn-off delay time
-
-
25
Fall time
-
-
20
Diode forward voltage drop
-
-
1.5
tr
td(OFF)
tf
VSD
O
Conditions
Ω
O
VGS = 4.5V, ID = 100mA
VGS = 10V, ID = 100mA
pF
VGS = 0V,
VDS = 25V,
f = 1.0MHz
ns
VDD = 25V,
ID = 250mA,
RGEN = 25Ω
V
VGS = 0V, ISD = 400mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
INPUT
0V
Pulse
Generator
10%
t(ON)
td(ON)
VDD
OUTPUT
0V
Doc.# DSFP-VN2460
B082013
VDD
90%
t(OFF)
tr
td(OFF)
OUTPUT
RGEN
tf
10%
10%
90%
RL
INPUT
D.U.T.
90%
2
Supertex inc.
www.supertex.com
VN2460
Typical Performance Curves
BVDSS Variation with Temperature
1.2
On-Resistance vs. Drain Current
50
VGS = 4.5V
40
RDSS(ON) (ohms)
BVDSS (normalized)
1.1
1.0
30
VGS = 10V
20
0.9
10
0
50
100
0
150
0
0.2
0.4
V
Transfer Characteristics
0.5
VDS = 25V
(th)
1.6
1.0
and RDS Variation with Temperature
3.0
1.4
VGS(th) (normalized)
25OC
ID (amperes)
0.8
TA = -55OC
0.4
0.3
125OC
0.2
2.5
1.2
2.0
VGS(th) @ 2.0mA
1.0
1.5
0.8
1.0
RDS(ON) @ 10V, 0.1A
0.1
0
0.6
ID (amperes)
Tj ( C)
O
0.5
0.6
0
2.0
4.0
6.0
8.0
0.4
-50
10
VGS (volts)
-25
0
25
50
RDS(ON) (normalized)
0.8
-50
75
100
125
0
150
Tj (OC)
Gate Drive Dynamic Characteristics
Capacitance vs. Drain-to-Source Voltage
10
300
ID =0.5A
f = 1MHz
8.0
VGS (volts)
C (picofarads)
225
150
CISS
75
4.0
0
COSS
10
20
30
0
40
0
1.0
2.0
3.0
4.0
5.0
QG (nanocoulombs)
VDS (volts)
Doc.# DSFP-VN2460
B082013
VDS = 40V
2.0
CRSS
0
VDS = 10V
6.0
3
Supertex inc.
www.supertex.com
VN2460
Typical Performance Curves (cont.)
Output Characteristics
1.2
1.0
6V
ID (amperes)
8V
0.8
ID (amperes)
VGS = 10V
8V
0.4
VGS = 10V
6V
0.6
0.4
5V
0.3
0.2
5V
4V
0.1
0.2
0
Saturation Characteristics
0.5
4V
0
10
20
30
40
3V
0
50
0
2.0
4.0
Transconductance vs. Drain Current
2.0
3V
8.0
VDS (volts)
VDS (volts)
0.5
6.0
10
Power Dissipation vs. Temperature
VDS = 25V
0.4
1.6
0.3
PD (watts)
GFS (siemens)
TA = -55OC
25OC
0.2
1.2
0.8
TO-92
125 C
O
0.1
0
0
0.1
0.2
0.3
0.4
0.4
0.6
0.5
ID (amperes)
SOT-89 (pulsed)
1.0
1.0
Thermal Resistance (normalized)
TO-92 (pulsed)
SOT-89 (DC)
0.1
TO-92 (DC)
0.01
TC = 25OC
0.001
1.0
Doc.# DSFP-VN2460
B082013
10
VDS (volts)
100
0
25
50
75
100
125
150
TA (OC)
Maximum Rated Safe Operating Area
ID (amperes)
SOT-89
SOT-89
PD = 1.6W
TC = 25OC
0.8
0.6
0.4
0.2
0
1000
Thermal Response Characteristics
TO-92
PD = 1W
TC = 25OC
0.001
0.01
0.1
1.0
10
tp (seconds)
4
Supertex inc.
www.supertex.com
VN2460
3-Lead TO-92 Package Outline (N3)
D
A
Seating
Plane
1
2
3
L
c
b
e1
e
Side View
Front View
E1
E
1
3
2
Bottom View
Symbol
Dimensions
(inches)
A
b
c
MIN
.170
.014
NOM
-
-
MAX
.210
.022
†
.014
†
D
E
E1
e
e1
L
.175
.125
.080
.095
.045
.500
-
-
-
-
-
-
.205
.165
.105
.105
.055
.610*
†
.022
†
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
Doc.# DSFP-VN2460
B082013
5
Supertex inc.
www.supertex.com
VN2460
3-Lead TO-243AA (SOT-89) Package Outline (N8)
D
D1
C
E H
L
1
2
E1
3
b
b1
e
A
e1
Top View
Symbol
Dimensions
(mm)
Side View
A
b
b1
C
D
D1
E
E1
e
MIN
1.40
0.44
0.36
0.35
4.40
1.62
2.29
2.00†
NOM
-
-
-
-
-
-
-
-
MAX
1.60
0.56
0.48
0.44
4.60
1.83
2.60
2.29
1.50
BSC
e1
3.00
BSC
H
L
3.94
0.73†
-
-
4.25
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
† This dimension differs from the JEDEC drawing
Drawings not to scale.
Supertex Doc. #: DSPD-3TO243AAN8, Version F111010.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
Supertex inc.
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-VN2460
B082013
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com