Supertex inc. VN2460 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability ►► Integral source-drain diode ►► High input impedance and high gain Applications ►► Motor controls ►► Converters, amplifiers, and switches ►► Power supply circuits ►► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Product Summary Ordering Information Part Number Package Options Packing VN2460N3-G TO-92 1000/Bag VN2460N3-G P002 TO-92 2000/Reel VN2460N3-G P003 TO-92 2000/Reel VN2460N3-G P005 TO-92 2000/Reel VN2460N3-G P013 TO-92 2000/Reel VN2460N3-G P014 TO-92 2000/Reel VN2460N8-G TO-243AA (SOT-89) 2000/Reel -G denotes a lead (Pb)-free / RoHS compliant package Refer to ‘P0xx’ Tape & Reel Specs for P002, P003, P005, P013, and P014 TO-92 Taping Specifications and Winding Styles Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Absolute Maximum Ratings 600V RDS(ON) ID(ON) (max) (min) 20Ω 2500mA Pin Configuration DRAIN DRAIN SOURCE SOURCE DRAIN GATE GATE TO-92 Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Operating and storage temperature BVDSS/BVDGS -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Typical Thermal Resistance Package θja TO-92 132OC/W TO-243AA (SOT-89) 133OC/W* TO-243AA (SOT-89) Product Marking S iV N 2 4 6 0 YYWW YY = Year Sealed WW = Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-92 VN4FW W = Code for week sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-243AA (SOT-89) * Mounted on FR5 Board, 25mm x 25mm x 1.57mm Doc.# DSFP-VN2460 B082013 Supertex inc. www.supertex.com VN2460 Thermal Characteristics (continuous)† ID (pulsed) ID Power Dissipation TO-92 160mA 500mA TO-243AA (SOT-89) 200mA 600mA Package IDR† IDRM 1.0W 160mA 500mA 1.6W 200mA 600mA @TA = 25OC ‡ Notes: † ID (continuous) is limited by max rated Tj . ‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Electrical Characteristics (T = 25°C unless otherwise specified) A Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 600 - - V VGS = 0V, ID = 2.0mA VGS(th) Gate threshold voltage 1.5 - 4.0 V VGS = VDS, ID = 2.0mA Change in VGS(th) with temperature - - -5.5 mV/ C VGS = VDS, ID = 2.0mA Gate body leakage current - - 100 nA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating ΔVGS(th) IGSS IDSS Zero gate voltage drain current ID(ON) On-state drain current RDS(ON) ΔRDS(ON) - - 10 µA - - 1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125OC 0.25 - - A VGS = 10V, VDS = 25V - - 25 - - 20 - - 1.7 %/ C VGS = 10V, ID = 100mA 50 - - mmho VDS = 25V, ID = 100mA Static drain-to-source on-state resistance Change in RDS(ON) with temperature GFS Forward transconductance CISS Input capacitance - - 150 COSS Common source output capacitance - - 50 CRSS Reverse transfer capacitance - - 25 td(ON) Turn-on delay time - - 10 Rise time - - 10 Turn-off delay time - - 25 Fall time - - 20 Diode forward voltage drop - - 1.5 tr td(OFF) tf VSD O Conditions Ω O VGS = 4.5V, ID = 100mA VGS = 10V, ID = 100mA pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 250mA, RGEN = 25Ω V VGS = 0V, ISD = 400mA Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 0V Pulse Generator 10% t(ON) td(ON) VDD OUTPUT 0V Doc.# DSFP-VN2460 B082013 VDD 90% t(OFF) tr td(OFF) OUTPUT RGEN tf 10% 10% 90% RL INPUT D.U.T. 90% 2 Supertex inc. www.supertex.com VN2460 Typical Performance Curves BVDSS Variation with Temperature 1.2 On-Resistance vs. Drain Current 50 VGS = 4.5V 40 RDSS(ON) (ohms) BVDSS (normalized) 1.1 1.0 30 VGS = 10V 20 0.9 10 0 50 100 0 150 0 0.2 0.4 V Transfer Characteristics 0.5 VDS = 25V (th) 1.6 1.0 and RDS Variation with Temperature 3.0 1.4 VGS(th) (normalized) 25OC ID (amperes) 0.8 TA = -55OC 0.4 0.3 125OC 0.2 2.5 1.2 2.0 VGS(th) @ 2.0mA 1.0 1.5 0.8 1.0 RDS(ON) @ 10V, 0.1A 0.1 0 0.6 ID (amperes) Tj ( C) O 0.5 0.6 0 2.0 4.0 6.0 8.0 0.4 -50 10 VGS (volts) -25 0 25 50 RDS(ON) (normalized) 0.8 -50 75 100 125 0 150 Tj (OC) Gate Drive Dynamic Characteristics Capacitance vs. Drain-to-Source Voltage 10 300 ID =0.5A f = 1MHz 8.0 VGS (volts) C (picofarads) 225 150 CISS 75 4.0 0 COSS 10 20 30 0 40 0 1.0 2.0 3.0 4.0 5.0 QG (nanocoulombs) VDS (volts) Doc.# DSFP-VN2460 B082013 VDS = 40V 2.0 CRSS 0 VDS = 10V 6.0 3 Supertex inc. www.supertex.com VN2460 Typical Performance Curves (cont.) Output Characteristics 1.2 1.0 6V ID (amperes) 8V 0.8 ID (amperes) VGS = 10V 8V 0.4 VGS = 10V 6V 0.6 0.4 5V 0.3 0.2 5V 4V 0.1 0.2 0 Saturation Characteristics 0.5 4V 0 10 20 30 40 3V 0 50 0 2.0 4.0 Transconductance vs. Drain Current 2.0 3V 8.0 VDS (volts) VDS (volts) 0.5 6.0 10 Power Dissipation vs. Temperature VDS = 25V 0.4 1.6 0.3 PD (watts) GFS (siemens) TA = -55OC 25OC 0.2 1.2 0.8 TO-92 125 C O 0.1 0 0 0.1 0.2 0.3 0.4 0.4 0.6 0.5 ID (amperes) SOT-89 (pulsed) 1.0 1.0 Thermal Resistance (normalized) TO-92 (pulsed) SOT-89 (DC) 0.1 TO-92 (DC) 0.01 TC = 25OC 0.001 1.0 Doc.# DSFP-VN2460 B082013 10 VDS (volts) 100 0 25 50 75 100 125 150 TA (OC) Maximum Rated Safe Operating Area ID (amperes) SOT-89 SOT-89 PD = 1.6W TC = 25OC 0.8 0.6 0.4 0.2 0 1000 Thermal Response Characteristics TO-92 PD = 1W TC = 25OC 0.001 0.01 0.1 1.0 10 tp (seconds) 4 Supertex inc. www.supertex.com VN2460 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L c b e1 e Side View Front View E1 E 1 3 2 Bottom View Symbol Dimensions (inches) A b c MIN .170 .014 NOM - - MAX .210 .022 † .014 † D E E1 e e1 L .175 .125 .080 .095 .045 .500 - - - - - - .205 .165 .105 .105 .055 .610* † .022 † JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. Doc.# DSFP-VN2460 B082013 5 Supertex inc. www.supertex.com VN2460 3-Lead TO-243AA (SOT-89) Package Outline (N8) D D1 C E H L 1 2 E1 3 b b1 e A e1 Top View Symbol Dimensions (mm) Side View A b b1 C D D1 E E1 e MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00† NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 1.50 BSC e1 3.00 BSC H L 3.94 0.73† - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version F111010. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-VN2460 B082013 6 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com