VP0808 DATA SHEET (06/27/2014) DOWNLOAD

Supertex inc.
VP0808
P-Channel Enhancement-Mode
Vertical DMOS FETs
Features
►►
►►
►►
►►
►►
►►
►►
General Description
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Applications
►►
►►
►►
►►
►►
►►
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Ordering Information
Part Number
Package Option
Packing
VP0808L-G
VP0808L-G P002
TO-92
1000/Bag
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Product Summary
BVDSS/BVDGS
-80V
RDS(ON)
ID(ON)
(max)
(min)
5.0Ω
-1.1A
VP0808L-G P003
VP0808L-G P005
TO-92
Pin Configuration
2000/Reel
VP0808L-G P013
VP0808L-G P014
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
BVDSS
Drain-to-gate voltage
BVDGS
Gate-to-source voltage
±30V
Operating and storage temperature
-55 C to +150 C
O
O
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Typical Thermal Resistance
Package
θja
TO-92
132OC/W
Doc.# DSFP-VP0808
B082313
GATE
TO-92
Product Marking
Si VP
0808L
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92
Supertex inc.
www.supertex.com
VP0808
Thermal Characteristics
ID
Package
TO-92
(continuous)†
(pulsed)
ID
Power Dissipation
@TC = 25OC
IDR†
IDRM
-280mA
-3.0A
1.0W
-280mA
-3.0A
Notes:
† ID (continuous) is limited by max rated Tj .
Electrical Characteristics (T = 25°C unless otherwise specified)
A
Sym
Parameter
Min
Typ
Max
Units
BVDSS
Drain-to-source breakdown voltage
-80
-
-
V
VGS = 0V, ID = -10µA
VGS(th)
Gate threshold voltage
-1.0
-
-4.5
V
VGS = VDS, ID = -1.0mA
-
-
-100
nA
VGS = ±20V, VDS = 0V
-
-
-10
-
-
-500
-1.1
-
-
IGSS
Gate body leakage current
IDSS
Zero gate voltage drain current
ID(ON)
On-state drain current
RDS(ON)
Static drain-to-source on-state resistance
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
-
A
VGS = -10V, VDS = -15V
-
5.0
Ω
VGS = -10V, ID = -1.0A
200
-
-
mmho
Forward transconductance
CISS
Input capacitance
-
-
150
COSS
Common source output capacitance
-
-
60
CRSS
Reverse transfer capacitance
-
-
25
td(ON)
Turn-on time
-
-
15
Rise time
-
-
40
Turn-off time
-
-
30
Fall time
-
-
30
Diode forward voltage drop
-
-1.2
-
td(OFF)
tf
VSD
VGS = 0V, VDS = Max Rating
µA
GFS
tr
Conditions
VDS = -10V, ID = -500mA
pF
VGS = 0V,
VDS = -25V,
f = 1.0MHz
ns
VDD = -25V,
ID = -500mA,
RGEN = 25Ω
V
VGS = 0V, ISD = -900mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
Pulse
Generator
10%
t(ON)
td(ON)
0V
OUTPUT
VDD
Doc.# DSFP-VP0808
B082313
tr
td(OFF)
90%
10%
RGEN
90%
t(OFF)
D.U.T.
tf
INPUT
OUTPUT
RL
90%
10%
2
VDD
Supertex inc.
www.supertex.com
VP0808
3-Lead TO-92 Package Outline (L)
D
A
Seating
Plane
1
2
3
L
c
b
e1
e
Side View
Front View
E1
E
1
3
2
Bottom View
Symbol
Dimensions
(inches)
A
b
c
MIN
.170
.014
NOM
-
-
MAX
.210
.022
†
.014
†
D
E
E1
e
e1
L
.175
.125
.080
.095
.045
.500
-
-
-
-
-
-
.205
.165
.105
.105
.055
.610*
†
.022
†
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
Supertex inc.
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-VP0808
B082313
3
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com