VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VN0808L 80 VN0808LS VQ1006P 90 VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V 0.8 to 2.5 0.4 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Low On-Resistance: 3.6 W Low Threshold: 1.6 V Low Input Capacitance: 35 pF Fast Switching Speed: 6 ns Low Input and Output Leakage Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-226AA Dual-In-Line TO-92S (TO-92) S S 1 G 2 1 N G 2 D1 1 14 D4 S1 2 13 S4 G1 3 12 G4 4 11 G2 5 10 G3 S2 6 9 S3 D2 7 8 D3 NC D D 3 3 N Top View Top View VN0808LS VN0808L N NC N Front View: Front View: VN0808LS VN0808L Top View “S” VN 0808LS xxyy “S” VN 0808L xxyy Sidebraze: VQ1006P Top View: VQ1006P “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code VQ1006P “S”f//xxyy ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) VQ1006P Symbol VN0808L VN0808LS Single Drain-Source Voltage VDS 80 80 90 Gate-Source Voltage VGS "30 "30 "20 Parameter Continuous Drain Current (TJ = 150_C) TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation ID IDM TA= 25_C TA= 100_C Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range PD RthJA TJ, Tstg 0.3 0.33 0.4 0.19 0.21 0.23 1.9 1.9 2 Total Quad V A 0.8 0.9 1.3 2 0.32 0.4 0.52 0.8 156 139 96 62.5 –55 to 150 Unit W _C/W _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70214 S-04279—Rev.D, 16-Jul-01 www.vishay.com 11-1 VN0808L/LS, VQ1006P Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits VN0808L/LS Parameter Symbol Test Conditions Typa Min V(BR)DSS VGS = 0 V, ID = 10 mA 125 80 VGS(th) VDS = VGS, ID = 1 mA 1.6 0.8 Max VQ1006P Min Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage V VDS = 0 V, VGS = "15 V Gate-Body Leakage IGSS On-State Drain Currentb ID(on) 0.8 "100 "100 10 VDS = 72 V, VGS = 0 V rDS(on) 1 Forward Common Source Output Conductanceb m mA 500 VDS = 10 V, VGS = 10 V 1.8 VGS = 5 V, ID = 0.3 A 3.8 VGS = 10 V, ID = 1 A 3.6 4 4.5 6.7 8 8.6 TJ = 125_C Transconductanceb nA 500 TJ = 125_C Drain-Source On-Resistanceb 2.5 "500 TJ = 125_C IDSS 2 TJ = 125_C VDS = 80 V, VGS = 0 V Zero Gate Voltage Drain Current 90 gfs VDS = 10 V, ID = 0.5 A 350 gos VDS = 10 V, ID = 0.1 A 0.23 1.5 1.5 A 5 170 W 170 mS Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 35 50 60 15 40 50 2 10 10 6 10 10 8 10 10 pF Switchingc Turn-On Time tON Turn-Off Time tOFF Notes a. For DESIGN AID ONLY, not subject to production testing.. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 VDD = 25 V, RL = 23 W ID ^ 1 A, VGEN = 10 V RG = 25 W ns VNDQ09 Document Number: 70214 S-04279—Rev.D, 16-Jul-01 VN0808L/LS, VQ1006P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 1.0 Output Characteristics for Low Gate Drive 100 VGS = 10 V VGS = 3 V 2.8 V 6V 2.6 V 80 5V 0.6 ID – Drain Current (mA) ID – Drain Current (mA) 0.8 4V 0.4 3V 0.2 60 2.4 V 40 2.2 V 20 2.0 V 1.8 V 2V 0 0 0 1.0 2.0 3.0 4.0 5.0 0 0.4 VDS – Drain-to-Source Voltage (V) 0.8 1.2 1.6 2.0 VDS – Drain-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 0.5 7 125_C TJ = –55_C 6 25_C rDS(on) – On-Resistance ( Ω ) ID – Drain Current (A) 0.4 0.3 0.2 VDS = 15 V 0.1 5 4 1.0 A 0.5 A ID = 0.1 A 3 2 1 0 0 0 2 4 6 8 10 0 8 12 16 VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature 10 20 2.25 rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) rDS(on) – Drain-Source On-Resistance ( Ω ) 4 VGS – Gate-Source Voltage (V) 8 6 VGS = 10 V 4 2 0 VGS = 10 V 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0 0.5 1.0 1.5 ID – Drain Current (A) Document Number: 70214 S-04279—Rev.D, 16-Jul-01 2.0 2.5 –50 –10 30 70 110 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 VN0808L/LS, VQ1006P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region Capacitance 10 125 VGS = 0 V VDS = 5 V f = 1 MHz C – Capacitance (pF) ID – Drain Current (mA) 100 1 TJ = 150_C 0.1 125_C 75 50 C iss C oss 25 25_C C rss –55_C 0.01 0 0.5 1.0 1.5 2.0 0 10 VGS – Gate-to-Source Voltage (V) Gate Charge 30 40 50 Load Condition Effects on Switching 15.0 100 VDD = 25 V RL = 23 W VGS = 0 to 10 V ID = 1.0 A I D = 1.0 A 12.5 t – Switching Time (ns) VGS – Gate-to-Source Voltage (V) 20 VDS – Drain-to-Source Voltage (V) 10.0 VDS = 45 V 7.5 72 V 5.0 10 td(off) tr td(on) tf 2.5 0 1 0 100 200 300 400 500 0.1 1 2 ID – Drain Current (A) Qg – Total Gate Charge (pC) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 0.1 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 156_C/W 0.01 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 0.1 1 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70214 S-04279—Rev.D, 16-Jul-01