VP0808 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) Order Number / Package -80V 5.0Ω -1.1A VP0808L TO-92 Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Applications ❏ Motor controls Package Option ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings SGD TO-92 Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 30V Operating and Storage Temperature Soldering Temperature* -55°C to +150°C 300°C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VP0808 Thermal Characteristics Package ID (continuous)* TO-92 ID (pulsed) -0.28A Power Dissipation -3A 1W θjc θja °C/W °C/W 125 170 * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min BVDSS Drain-to-Source Breakdown Voltage -80 VGS(th) Gate Threshold Voltage -1.0 IGSS IDSS Typ Max Unit Conditions V VGS= 0V, ID =-10µA -4.5 V VGS = VDS, ID = -1mA Gate Body Leakage -100 nA VGS = ±20V, VDS = 0V Zero Gate Voltage Drain Current -10 -500 ID(ON) ON-State Drain Current RDS(ON) Static Drain-to-Source ON-State Resistance GFS Forward Transconductance CISS Input Capacitance 150 COSS Common Source Output Capacitance 60 CRSS Reverse Transfer Capacitance 25 td(ON) Turn-ON Delay Time 15 tr Rise Time 40 td(OFF) Turn-OFF Time 30 tf Fall Time 30 VSD Diode Forward Voltage Drop VGS = 0V, VDS = Max Rating µA VGS = 0V, VDS = Max Rating TA = 125°C A VGS = -10V, VDS = -15V Ω VGS = -10V, ID = -1A -1.1 200 Ω 5.0 VDS = -10V, ID = -0.5A pF VGS = 0V, VDS = -25V f = 1MHz ns VDD = -25V, ID = -0.5A RGEN = 25Ω V VGS = 0V, ISD = -0.9A m -1.2 Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% PULSE GENERATOR INPUT 90% -10V t(ON) td(ON) Rgen t(OFF) td(OFF) tr tF D.U.T. 0V 90% OUTPUT INPUT 90% RL OUTPUT VDD 10% 10% VDD 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 2 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com