FEATURES • Isolation Test Voltage: 2500 VACRMS • TTL Compatible • High Bit Rates: 1 Mbit/s • High Common-Mode Interference Immunity • Bandwidth 2 MHz • Open-Collector Output • External Base Wiring Possible • Field-Effect Stable by TRIOS* • Underwriters Lab File #E52744 6N135 6N136 HIGH-SPEED 2.5 kV TRIOS OPTOCOUPLER Dimensions in inches (mm) 4 3 2 1 Pin One I.D. NC 1 8 Anode 2 7 Cathode 3 6 NC 4 5 .268 (6.81) .255 (6.48) DESCRIPTION The 6N135 and 6N136 are optocouplers with a GaAIAs infrared emitting diode, optically coupled with an integrated photodetector which consists of a photodiode and a high-speed transistor in a DIP8 plastic package. 5 6 7 8 .305 typ. (7.75) typ. .045 (1.14) .030 (.76) .150 (3.81) .130 (3.30) .135 (3.43) .115 (2.92) 4° Typ. 10° Typ. .040 (1.02) .030 (.76 ) 3°–9° .022 (.56) .018 (.46) Maximum Ratings Detector Supply Voltage ..................................... –0.5 to 15 V Output Voltage .................................... –0.5 to 15 V Emitter-Base Voltage ......................................... 5 V Output Current.................................................8 mA Maximum Output Current ..............................16 mA Base Current .................................................. 5 mA Thermal Resistance................................... 300 K/W Total Power Dissipation (TA≤70°C) .............100 mW Package Isolation Test Voltage (between emitter and detector climate per DIN 40046, part 2, Nov. 74 (t=1min.) ............... 2500 VACRMS Pollution Degree (DIN VDE 0109) ......................... 2 Creepage ...........................................................≥7 mm Clearance ...........................................................≥7 mm Comparative Tracking Index per DIN IEC112/VDE 0303 part 1, Group IIIa per DIN VDE 6110 ........................ 175 Isolation Resistance VIO=500 V, TA = 25°C ............................... ≥1012 Ω VIO=500 V, TA = 100°C ............................. ≥1011 Ω Storage Temperature Range ....... –55°C to +125°C Ambient Temperature Range ...... –55°C to +100°C Soldering Temperature (max. ≤10 sec., dip soldering ≥0.5 mm from case bottom).............................................. 260°C *TRIOS—TRansparent IOn Shield Base (VB) Collector (VO) Emitter (GND) .390 (9.91) .379 (9.63) Signals can be transmitted between two electrically separated circuits up to frequencies of 2 MHz. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. Emitter Reverse Voltage .................................................5 V Forward Current ............................................25 mA Peak Forward Current (t =1 ms, duty cycle 50%) ............................50 mA Maximum Surge Forward Current (t ≤1 µs, 300 pulses/s).......................................1 A Thermal Resistance................................... 700 K/W Total Power Dissipation (TA≤70°C) ...............45 mW Cathode (VCC) .100 (2.54) Typ. .012 (.30) .008 (.20) Characteristics (TA=0 to 70°C unless otherwise specified, TA=25°C typ.) Emitter Symbol Forward Voltage VF 1.6 (≤1.9) Unit Condition V IF=16 mA Breakdown Voltage VBR ≥5 V IR=10 µA Reverse Current IR 0.5 (≤10) µA VR=5 V Capacitance CO 125 pF VR=0 V, f=1 MHz Temperature Coefficient, Forward Voltage ∆VF /∆TA -1.7 mV/°C IF=16 mA Supply Current Logic Low ICCL 150 µA IF=16 mA, VO open, VCC=15 V Supply Current Logic High ICCH 0.01 (≤1) µA IF=0 mA, VO open, VCC=15 V IF=16 mA, VCC=4.5 V IO=1.1 mA IO=2.4 mA Detector Output Voltage, Output Low 6N135 6N136 VOL VOL 0.1 (≤0.4) 0.1 (≤0.4) V V Output Current, Output High ICH 3 (≤500) nA Output Current, Output High ICH 0.01 (≤1) µA Current Gain HFE 150 CIO 0.6 pF f=1 MHz 6N135 6N136 CTR CTR 16 (≥7) 35 (≥19) % % IF=16 mA, VO=0.4 V, VCC=4.5 V, TA=25°C 6N135 6N136 CTR CTR ≥5 ≥15 % IF=16 mA, VO=0.5 V, VCC=4.5 V IF=0 mA, VO=VCC=5.5 V IF=0 mA VO=VCC=15 V VO=5 V, IO=3 mA Package Coupling Capacitance Input-Output Current Transfer Ratio 5–1 This document was created with FrameMaker 4.0.4 Delay Time (IF=16 mA, VCC=5 V, TA=25°C) Figure 1. Switching times IF t VO High - Low 6N135 (RL=4.1 kΩ) 6N136 (RL=1.9 kΩ) tPHL tPHL 0.3 (≤1.5) 0.2 (≤0.8) µs µs Low - High 6N135 (RL=4.1 kΩ) 6N136 (RL=1.9 kΩ) tPLH tPLH 0.3 (≤1.5) 0.2 (≤0.8) µs µs 5V Common Mode Interference Immunity (VCM=10 VP-P, VCC=5 V, TA=25°C) 1.5 V VOL t tPHL tPLH Pulse generator ZO=50 Ω tr,tf=5 ns duty cycle 10% t≤100 µs 5V 1 8 2 7 3 6 VO 4 5 CL 15 pF High (IF=0 mA) 6N135 (RL=4.1 kΩ) 6N136 (RL=1.9 kΩ) CMH CMH 1000 1000 V/µs V/µs Low (IF=16 mA) 6N135 (RL=4.1 kΩ) 6N136 (RL=1.9 kΩ) CML CML 1000 1000 V/µs V/µs IF IF Monitor 100 Ω RL Figure 3. Output characteristics-6N135 Output current versus output voltage (TA=25°C, VCC=5 V) Figure 2. Common-mode interference immunity VCM 10 V 0V 90% 10% 10% 90% t tf tr VO 5V A: IF=0 mA t VO B: IF=16 mA VOL t IF A B 1 8 2 7 3 6 4 5 Figure 4. Output characteristics-6N136 Output current versus output voltage (TA=25°C, VCC=5 V) 5V RL VO VFF +VCM Pulse generator ZO=50 Ω tr,tf=8 ns 6N135/136 5–2 Figure 5. Permissible forward current of emitting diode versus ambient temperature Figure 8. Small signal transfer ratio versus forward current (VCC=5 V, TA=25°C) Figure 11. Delay times versus ambient temperature (IF=16 mA, VCC=5 V, 6N135: RL=4.1 kΩ, 6N136: RL=1.9 kΩ) Figure 6. Permissible total power dissipation versus ambient temperature Figure 9. Current transfer ratio (normalized) versus ambient temperature (normalized to IF=16 mA, VO=0.4 V, VCC=5 V, TA=25°C) Figure 12. Current transfer ratio (normalized) versus forward current (IF=16 mA, VO=0.4 V, VCC=5 V, TA=25°C) Figure 7. Forward current of emitting diodeversus forward voltage (TA=25°C) Figure 10. Output current (high)versus ambient temperature (VO=VCC=5 V, IF=0) 6N135/136 5–3