INFINEON SFH6315T

N
EW
SFH6315T
SFH6316T
SFH6343T
FEATURES
• Surface Mountable
• Industry Standard SOIC-8 Footprint
• Compatible with Infrared Vapor Phase Reflow and
Wave Soldering Processes
• Isolation Voltage, 2500 VRMS
• Very High Common Mode Transient Immunity:
15000 V/µs at VCM=1500 V Guaranteed (SFH6343T)
• High Speed: 1 Mb/s
• TTL Compatible
• Guaranteed AC and DC Performance Over
Temperature: 0°C to 70°C
• Open Collector Output
• Pin Compatible with HP Optocouplers
SFH6315T—HCPL0500
SFH6316T—HCPL0501
SFH6343T—HCPL0453
• Available in Tape and Reel (suffix T)
APPLICATIONS
• Line Receivers
• Logic Ground Isolation
• Analog Signal Ground Isolation
• Replace Pulse Transformers
DESCRIPTION
The SFH6315T/16T/43T, high speed optocouplers, each
consists of a GaAlAs infrared emitting diode, optically
coupled with an integrated photodetector and a high
speed transistor. The photodetector is junction isolated
from the transistor to reduce miller capacitance effects.
The open collector output function allows circuit designers to adjust the load conditions when interfacing with
different logic systems such as TTL, CMOS, etc.
Because the SFH6343T has a Faraday shield on the
detector chip, it can also reject and minimize high input
to output common mode transient voltages. There is no
base connection, further reducing the potential electrical
noise entering the package.
The SFH6315T/16T/43T are packaged in industry standard SOIC-8 packages and are suitable for surface
mounting.
Absolute Maximum Ratings
Emitter (GaAlAs)
Reverse Voltage........................................................... 3 V
DC Forward Current................................................25 mA
Surge Forward Current ................................................1 A
tp≤1 µs, 300 pulses/sec.
Total Power Dissipation (TA≤70°C) ........................ 45 mW
Semiconductor Group
HIGH SPEED OPTOCOUPLER
Package Dimensions in Inches (mm)
SFH6315T/6T
SFH6315/6
NC 1
.120±.002
(3.05±.05)
8 VCC
A 2
7 Base VB
K 3
6 C
5 E
NC 4
SFH6343T
SFH6343
CL .154±.002
(3.91±.05)
.240
(6.10)
.016
(.41)
Pin 1
NC 1
8 VCC
A 2
7 NC
K 3
6 C
.015±.002
(.38±.05)
.192±.005
(4.88±.13)
.004 (.10)
.008 (.20)
5 E
NC 4
40°
.008 (.20)
5° max.
.050 (1.27) typ.
.020±.004
(.15±.10)
2 plcs.
.021 (.53)
R.010
(.25) max.
7°
.058±.005
(1.49±.13)
.125±.005
(3.18±.13)
Lead
Coplanarity
±.0015 (.04)
max.
TOLERANCE: ± .005 (unless otherwise noted)
Absolute Maximum Ratings (continued)
Detector (Si Photodiode + Transistor)
Supply Voltage ............................................................–0.5 to 30 V
Output Voltage ..........................................................–0.5 to ≥20 V
Output Current ...................................................................... 8 mA
Total Power Dissipation (TA≤70°C)................................... 100 mW
Package
Isolation Test Voltage
between emitter and detector ............................. 2500 VACRMS
(refer to climate DIN 40046, part 2, Nov. 74)
Pollution Degree (DIN VDE0110) .................................................2
Creepage ............................................................................≥4 mm
Clearance............................................................................≥4 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part 1 .......................................175
Isolation Resistance
VIO=500 V, TA=25°C, RISOL (Note 2) .............................≥1012 Ω
VIO=500 V, TA=100°C, RISOL(Note 2)............................≥1011 Ω
Storage Temperature Range.............................. –55°C to +150°C
Ambient Temperature Range............................. –55°C to +100°C
Junction Temperature ..........................................................100°C
Soldering Temperature (t=10 sec. max.) .............................260°C
Dip soldering: distance to seating plane ≥1.5 mm
Specifications subject to change.
4–44
This document was created with FrameMaker 4.0.3
10.95
Electrical Characteristics
Over recommended temperature (TA=0°C to 70°C) unless otherwise specified. See note 6. *All typical values at TA=25°C.
Symbol
Parameter
Input Forward
Voltage
Device
Min.
Typ.*
Max.
Units
1.8
VF
1.6
Test Conditions
TA=25°C
Note
IF=16 mA
V
1.9
Input Reverse
Current
IR
0.5
10
µA
VR=3 V
Input Capacitance
CIN
75
pF
f=1 MHz, VF=0 V
Temperature
Coefficient of
Forward Voltage
∆VF
---------∆TA
–1.7
mV/°C
IF=16 mA
Logic Low Supply
Current
ICCL
100
µA
IF=16 mA, VO=Open, VCC=15 V
Logic High Supply
Current
ICCH
0.001
1
2
Logic Low Output
Voltage
VOL
SFH6315T
TA=25°C
µA
IF=0 mA, VO=Open, VCC=15 V
0.4
0.15
TA=25°C
IO=1.1 mA
TA=25°C
IO=3.0 mA
TA=25°C
VO=VCC=5.5 V
V
0.5
SFH6316T
SFH6343T
IO=0.8 mA
0.4
0.15
V
IO=2.4 mA
0.5
Logic High Output
Current
IOH
0.003
0.01
0.5
µA
1
50
Transistor DC
Current Gain
hFE
150
Capacitance
(Input-Output)
CI-O
0.4
Current Transfer Ratio
CTR
SFH6315T
7
16
5
17
IF=16 mA,
VCC=4.5 V
TA=25°C
VO=VCC=15.0 V
TA=0–70°C
VO=VCC=15.0 V
IF=0 mA
VO=5 V, IO=3 mA
pF
f=1 MHz
50
TA=25°C
6
VO=0.4 V
1, 6
%
SFH6316T
SFH6343T
19
35
15
36
VO=0.5 V
50
TA=25°C
IF=16 mA,
VCC=4.5 V
VO=0.4 V
%
VO=0.5 V
Figure 1. Test circuit for switching times
IF
10% Duty Cycle
1/f<100 µs
0
5V
VO
1.5 V
1.5 V
VOL
tPHL
tPLH
Pulse
Generator
ZO=50 Ω
tr=5 ns
IF
1
8
2
7
+5 V
RL
IF=Monitor
3
6
4
5
0.1 µF
VO
CL=15pF
Rm
SFH6315T/6316T/6343T
Semiconductor Group
4–45
Switching Specifications
Over recommended temperature (TA=0°C to 70°C), VCC=5 V, IF=16 mA unless otherwise specified.
*All typical values, TA=25°C.
Parameter
Propagation Delay Time
to Logic Low at Output
Symbol
Device
tPHL
SFH6315T
Min.
Typ.*
0.5
Max.
1.5
0.25
SFH6315T
0.5
Test Conditions
tPLH
TA=25°C
0.8
0.5
SFH6315T
1
SFH6316T
1
1
4, 5
1
4, 5
2
3, 4, 5
2
3, 4, 5
RL=1.9 KΩ
1.5
TA=25°C
RL=4.1 KΩ
µs
2.0
SFH6316T
SFH6343T
Note
RL=4.1 KΩ
1.0
Propagation Delay Time
to Logic High at Output
Fig.
TA=25°C
µs
2.0
SFH6316T
SFH6343T
Units
0.8
TA=25°C
RL=1.9 KΩ
RL=4.1 KΩ
IF=0 mA
TA=25°C
VCM=10 VP-P
1.0
Common Mode Transient
Immunity at Logic High
Level Output
|CMH|
SFH6343T
Common Mode Transient
Immunity at Logic Low
Level Output
|CML|
RL=1.9 KΩ
30
RL=1.9 KΩ
IF=0 mA
TA=25°C
VCM=1500 VP-P
SFH6315T
1
RL=4.1 KΩ
SFH6316T
1
RL=1.9 KΩ
IF=16 mA
TA=25°C
VCM=10 VP-P
SFH6343T
15
kV/µs
15
kV/µs
RL=1.9 KΩ
30
IF=16 mA
TA=25°C
VCM=1500 VP-P
Notes
1.
2.
3.
4.
5.
6.
Current transfer ratio in percent equals the ratio of output collector current (IO) to the forward LED input current (IF) times 100.
Device considered a two-terminal device: pins 1, 2, 3, and 4 shorted together and pins 5, 6, 7, and 8 shorted together.
Common mode transient immunity in a Logic High level is the maximum tolerable (positive) dVcm/dt on the leading edge of the common mode pulse (VCM) to assure that the output will remain in a Logic High state (i.e., VO>2.0 V). Common mode transient immunity
in a Logic Low level is the maximum tolerable (negative) dVcm/dt on the trailing edge of the common mode pulse signal (VCM to
assure that the output will remain in a Logic Low state (i.e., VO<0.8 V).
The 1.9 KΩ load represents 1 TTL unit load of 1.6 mA and the 5.6 kΩ pull-up resistor.
The 4.1 KΩ load represents 1 LSTTL unit load of 0.36 mA and the 6.1 kΩ pull-up resistor.
A 0.1 µf bypass capacitor connected between pins 5 and 8 is recommended.
Figure 2. Test circuit for transient immunity and typical waveforms
VCM
90%
0 V 10%
90%
10%
tr
5V
Switch at A: IF=0 mA
VO
Switch at B: IF=16 mA
8
2
7
3
6
tf
A
VO
1
+5 V
IF
RL
VO
0.1 µF
B
5
4
VFF
+
VOL
VCM
–
Pulse Generator
SFH6315T/6316T/6343T
Semiconductor Group
4–46
Figure 3. LED forward current vs. forward voltage
Figure 4. Permissible forward LED current vs. temperature
30
IF LED Current in ma
IF-LED Current in mA
20
15
25°C
75°C
10
0°C
5
0
1.3
1.4
1.5
1.6
20
10
0
1.7
0
20
Figure 5. Permissible power dissipation vs. temp.
60
80
100
Figure 6. Output current vs. output voltage
120
8
100
Io-Output Current in mA
Total Power in mW
40
Ambient Temperature in °C
VF-LED forward Voltage
Detector
80
60
40
Emitter
20
0
0
20
40
60
80
Ambient Temperature in °C
100
Figure 7. Output current (high) vs. temperature
IF=25 mA
6
20 mA
15 mA
4
10 mA
2
5 mA
0
0
5
10
Vo-Output Voltage in Volts
15
Figure 8. NCTR vs. IF
10 -6
1.4
1.2
10 -8
NCTR
Ioh
10 -7
10 -9
10 -10
-20
0
20
40
60
Ambient Temperature in °C
80
100
SFH6315
Normalized @ 16 mA
Vcc=5v
V0=0.4V
T=25°C
1.0
0.2
.0001
.001
IF in mA
.01
.1
Figure 10. NCTR vs. temperature (SFH6315T)
IF=10 mA
1.4
Normalized @ 16 mA
Vo=0.4V
VCC=5V
Tamb=25°C
1.2
NCTR
1.3
NCTR
0.8
0.4
-40
Figure 9. NCTR vs. temperature (SFH6316T/43T)
1.1
SFH6316/43
1.0
0.6
10 -11
-60
1.2
Vcc=5V
Tamb=25°C
IF=16 mA
0.9
IF=10 mA
IF=16 mA
1.0
0.8
0.8
0.6
0.7
-40
-20
0
20
40
60
Temperature °C
80
-40
100
-20
0
20
40
60
80
100
Temperature in °C
SFH6315T/6316T/6343T
Semiconductor Group
4–47