N EW SFH6315T SFH6316T SFH6343T FEATURES • Surface Mountable • Industry Standard SOIC-8 Footprint • Compatible with Infrared Vapor Phase Reflow and Wave Soldering Processes • Isolation Voltage, 2500 VRMS • Very High Common Mode Transient Immunity: 15000 V/µs at VCM=1500 V Guaranteed (SFH6343T) • High Speed: 1 Mb/s • TTL Compatible • Guaranteed AC and DC Performance Over Temperature: 0°C to 70°C • Open Collector Output • Pin Compatible with HP Optocouplers SFH6315T—HCPL0500 SFH6316T—HCPL0501 SFH6343T—HCPL0453 • Available in Tape and Reel (suffix T) APPLICATIONS • Line Receivers • Logic Ground Isolation • Analog Signal Ground Isolation • Replace Pulse Transformers DESCRIPTION The SFH6315T/16T/43T, high speed optocouplers, each consists of a GaAlAs infrared emitting diode, optically coupled with an integrated photodetector and a high speed transistor. The photodetector is junction isolated from the transistor to reduce miller capacitance effects. The open collector output function allows circuit designers to adjust the load conditions when interfacing with different logic systems such as TTL, CMOS, etc. Because the SFH6343T has a Faraday shield on the detector chip, it can also reject and minimize high input to output common mode transient voltages. There is no base connection, further reducing the potential electrical noise entering the package. The SFH6315T/16T/43T are packaged in industry standard SOIC-8 packages and are suitable for surface mounting. Absolute Maximum Ratings Emitter (GaAlAs) Reverse Voltage........................................................... 3 V DC Forward Current................................................25 mA Surge Forward Current ................................................1 A tp≤1 µs, 300 pulses/sec. Total Power Dissipation (TA≤70°C) ........................ 45 mW Semiconductor Group HIGH SPEED OPTOCOUPLER Package Dimensions in Inches (mm) SFH6315T/6T SFH6315/6 NC 1 .120±.002 (3.05±.05) 8 VCC A 2 7 Base VB K 3 6 C 5 E NC 4 SFH6343T SFH6343 CL .154±.002 (3.91±.05) .240 (6.10) .016 (.41) Pin 1 NC 1 8 VCC A 2 7 NC K 3 6 C .015±.002 (.38±.05) .192±.005 (4.88±.13) .004 (.10) .008 (.20) 5 E NC 4 40° .008 (.20) 5° max. .050 (1.27) typ. .020±.004 (.15±.10) 2 plcs. .021 (.53) R.010 (.25) max. 7° .058±.005 (1.49±.13) .125±.005 (3.18±.13) Lead Coplanarity ±.0015 (.04) max. TOLERANCE: ± .005 (unless otherwise noted) Absolute Maximum Ratings (continued) Detector (Si Photodiode + Transistor) Supply Voltage ............................................................–0.5 to 30 V Output Voltage ..........................................................–0.5 to ≥20 V Output Current ...................................................................... 8 mA Total Power Dissipation (TA≤70°C)................................... 100 mW Package Isolation Test Voltage between emitter and detector ............................. 2500 VACRMS (refer to climate DIN 40046, part 2, Nov. 74) Pollution Degree (DIN VDE0110) .................................................2 Creepage ............................................................................≥4 mm Clearance............................................................................≥4 mm Comparative Tracking Index per DIN IEC 112/VDE 0303, part 1 .......................................175 Isolation Resistance VIO=500 V, TA=25°C, RISOL (Note 2) .............................≥1012 Ω VIO=500 V, TA=100°C, RISOL(Note 2)............................≥1011 Ω Storage Temperature Range.............................. –55°C to +150°C Ambient Temperature Range............................. –55°C to +100°C Junction Temperature ..........................................................100°C Soldering Temperature (t=10 sec. max.) .............................260°C Dip soldering: distance to seating plane ≥1.5 mm Specifications subject to change. 4–44 This document was created with FrameMaker 4.0.3 10.95 Electrical Characteristics Over recommended temperature (TA=0°C to 70°C) unless otherwise specified. See note 6. *All typical values at TA=25°C. Symbol Parameter Input Forward Voltage Device Min. Typ.* Max. Units 1.8 VF 1.6 Test Conditions TA=25°C Note IF=16 mA V 1.9 Input Reverse Current IR 0.5 10 µA VR=3 V Input Capacitance CIN 75 pF f=1 MHz, VF=0 V Temperature Coefficient of Forward Voltage ∆VF ---------∆TA –1.7 mV/°C IF=16 mA Logic Low Supply Current ICCL 100 µA IF=16 mA, VO=Open, VCC=15 V Logic High Supply Current ICCH 0.001 1 2 Logic Low Output Voltage VOL SFH6315T TA=25°C µA IF=0 mA, VO=Open, VCC=15 V 0.4 0.15 TA=25°C IO=1.1 mA TA=25°C IO=3.0 mA TA=25°C VO=VCC=5.5 V V 0.5 SFH6316T SFH6343T IO=0.8 mA 0.4 0.15 V IO=2.4 mA 0.5 Logic High Output Current IOH 0.003 0.01 0.5 µA 1 50 Transistor DC Current Gain hFE 150 Capacitance (Input-Output) CI-O 0.4 Current Transfer Ratio CTR SFH6315T 7 16 5 17 IF=16 mA, VCC=4.5 V TA=25°C VO=VCC=15.0 V TA=0–70°C VO=VCC=15.0 V IF=0 mA VO=5 V, IO=3 mA pF f=1 MHz 50 TA=25°C 6 VO=0.4 V 1, 6 % SFH6316T SFH6343T 19 35 15 36 VO=0.5 V 50 TA=25°C IF=16 mA, VCC=4.5 V VO=0.4 V % VO=0.5 V Figure 1. Test circuit for switching times IF 10% Duty Cycle 1/f<100 µs 0 5V VO 1.5 V 1.5 V VOL tPHL tPLH Pulse Generator ZO=50 Ω tr=5 ns IF 1 8 2 7 +5 V RL IF=Monitor 3 6 4 5 0.1 µF VO CL=15pF Rm SFH6315T/6316T/6343T Semiconductor Group 4–45 Switching Specifications Over recommended temperature (TA=0°C to 70°C), VCC=5 V, IF=16 mA unless otherwise specified. *All typical values, TA=25°C. Parameter Propagation Delay Time to Logic Low at Output Symbol Device tPHL SFH6315T Min. Typ.* 0.5 Max. 1.5 0.25 SFH6315T 0.5 Test Conditions tPLH TA=25°C 0.8 0.5 SFH6315T 1 SFH6316T 1 1 4, 5 1 4, 5 2 3, 4, 5 2 3, 4, 5 RL=1.9 KΩ 1.5 TA=25°C RL=4.1 KΩ µs 2.0 SFH6316T SFH6343T Note RL=4.1 KΩ 1.0 Propagation Delay Time to Logic High at Output Fig. TA=25°C µs 2.0 SFH6316T SFH6343T Units 0.8 TA=25°C RL=1.9 KΩ RL=4.1 KΩ IF=0 mA TA=25°C VCM=10 VP-P 1.0 Common Mode Transient Immunity at Logic High Level Output |CMH| SFH6343T Common Mode Transient Immunity at Logic Low Level Output |CML| RL=1.9 KΩ 30 RL=1.9 KΩ IF=0 mA TA=25°C VCM=1500 VP-P SFH6315T 1 RL=4.1 KΩ SFH6316T 1 RL=1.9 KΩ IF=16 mA TA=25°C VCM=10 VP-P SFH6343T 15 kV/µs 15 kV/µs RL=1.9 KΩ 30 IF=16 mA TA=25°C VCM=1500 VP-P Notes 1. 2. 3. 4. 5. 6. Current transfer ratio in percent equals the ratio of output collector current (IO) to the forward LED input current (IF) times 100. Device considered a two-terminal device: pins 1, 2, 3, and 4 shorted together and pins 5, 6, 7, and 8 shorted together. Common mode transient immunity in a Logic High level is the maximum tolerable (positive) dVcm/dt on the leading edge of the common mode pulse (VCM) to assure that the output will remain in a Logic High state (i.e., VO>2.0 V). Common mode transient immunity in a Logic Low level is the maximum tolerable (negative) dVcm/dt on the trailing edge of the common mode pulse signal (VCM to assure that the output will remain in a Logic Low state (i.e., VO<0.8 V). The 1.9 KΩ load represents 1 TTL unit load of 1.6 mA and the 5.6 kΩ pull-up resistor. The 4.1 KΩ load represents 1 LSTTL unit load of 0.36 mA and the 6.1 kΩ pull-up resistor. A 0.1 µf bypass capacitor connected between pins 5 and 8 is recommended. Figure 2. Test circuit for transient immunity and typical waveforms VCM 90% 0 V 10% 90% 10% tr 5V Switch at A: IF=0 mA VO Switch at B: IF=16 mA 8 2 7 3 6 tf A VO 1 +5 V IF RL VO 0.1 µF B 5 4 VFF + VOL VCM – Pulse Generator SFH6315T/6316T/6343T Semiconductor Group 4–46 Figure 3. LED forward current vs. forward voltage Figure 4. Permissible forward LED current vs. temperature 30 IF LED Current in ma IF-LED Current in mA 20 15 25°C 75°C 10 0°C 5 0 1.3 1.4 1.5 1.6 20 10 0 1.7 0 20 Figure 5. Permissible power dissipation vs. temp. 60 80 100 Figure 6. Output current vs. output voltage 120 8 100 Io-Output Current in mA Total Power in mW 40 Ambient Temperature in °C VF-LED forward Voltage Detector 80 60 40 Emitter 20 0 0 20 40 60 80 Ambient Temperature in °C 100 Figure 7. Output current (high) vs. temperature IF=25 mA 6 20 mA 15 mA 4 10 mA 2 5 mA 0 0 5 10 Vo-Output Voltage in Volts 15 Figure 8. NCTR vs. IF 10 -6 1.4 1.2 10 -8 NCTR Ioh 10 -7 10 -9 10 -10 -20 0 20 40 60 Ambient Temperature in °C 80 100 SFH6315 Normalized @ 16 mA Vcc=5v V0=0.4V T=25°C 1.0 0.2 .0001 .001 IF in mA .01 .1 Figure 10. NCTR vs. temperature (SFH6315T) IF=10 mA 1.4 Normalized @ 16 mA Vo=0.4V VCC=5V Tamb=25°C 1.2 NCTR 1.3 NCTR 0.8 0.4 -40 Figure 9. NCTR vs. temperature (SFH6316T/43T) 1.1 SFH6316/43 1.0 0.6 10 -11 -60 1.2 Vcc=5V Tamb=25°C IF=16 mA 0.9 IF=10 mA IF=16 mA 1.0 0.8 0.8 0.6 0.7 -40 -20 0 20 40 60 Temperature °C 80 -40 100 -20 0 20 40 60 80 100 Temperature in °C SFH6315T/6316T/6343T Semiconductor Group 4–47