SFH 640 5.3 FEATURES • CTR at IF=10 mA, VCE=10 V SFH640-1, 40-80% SFH640-2, 63-125% SFH640-3*, 100-200% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage, BVCER=300 V • Isolation Test Voltage: 5300 VACRMS • Low Coupling Capacitance • High Common Mode Transient Immunity • Phototransistor Optocoupler 6 Pin DIP Package with Base Connection • Field Effect Stable: TRIOS+ V • VDE 0884 Available with Option 1 • Underwriters Lab File #E52744 The SFH 640 is an optocoupler with very high BVCER, a minimum of 300 volts. It is intended for telecommunications applications or any DC application requiring a high blocking voltage. The SFH640 is a “better than” replacement for H11D1. *Supplies from this group can't always be guranteed due to unforseeable yield spread. +TRIOS–TRansparent IOn Shield PHOTOTRANSISTOR HIGH BVCER VOLTAGE OPTOCOUPLER Dimensions in inches (mm) Pin One ID 3 2 1 Anode 1 .248 (6.30) .256 (6.50) 6 Base Cathode 2 4 5 5 Collector NC 3 6 4 Emitter .335 (8.50) .343 (8.70) .300 (7.62) typ. .039 (1.00) Min. 4° typ. D E DESCRIPTION KV TRIOS .018 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) 18° typ. .020 (.051) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. .010 (.25) .014 (.35) .110 (2.79) .150 (3.81) .300 (7.62) .347 (8.82) Maximum Ratings (TA=25°C) Emitter Reverse Voltage ...................................................................................6 V DC Forward Current ....................................................................... 60 mA Surge Forward Current (tp≤10 µs) .................................................. 2.5 A Total Power Dissipation ............................................................... 100 mW Detector Collector-Emitter Voltage ................................................................ 300 V Collector-Base Voltage .....................................................................300 V Emitter-Base Voltage ..........................................................................7 V Collector Current ........................................................................... 50 mA Surge Collector Current (tp≤1 ms) ............................................... 100 mA Total Power Dissipation ............................................................... 300 mW Package Isolation Test Voltage (between emitter and detector, refer to climate DIN 40046 part 2 Nov. 74) ...................................................... 5300 VACRMS/7500 VACPK Isolation Resistance VIO=500 V, TA=25°C .........................................................................≥1012 Ω VIO=500 V, TA=100°C .......................................................................≥1011 Ω Insulation Thickness between Emitter and Detector .................. ≥0.4 mm Creepage .................................................................................................≥7 mm Clearance .................................................................................................≥7 mm Comparative Tracking Index per DIN IEC 112/VDE 0303, part1 ................................................... 175 Storage Temperature Range .......................................... -55°C to +150°C Operating Temperature Range....................................... -55°C to +100°C Junction Temperature......................................................................100°C Soldering Temperature (max. 10 sec., dip soldering: distance to seating plane≥1.5 mm) .............................................260°C 5–1 Characteristics (TA=25°C, unless otherwise specified) Symbol Min Typ Max Unit Condition 1.1 1.5 V IF=10 mA V IR= 10 µA µA VR=6 V VR=0 V, f=1 MHz Emitter Forward Voltage VF Reverse Voltage VR Reverse Current IR 0.01 Capacitance CO 25 pF Thermal Resistance RthJA 750 K/W 6 10 Detector Voltage Collector-Emitter Emitter-Base BVCER BVBEO 300 7 V V ICE=1 mA, RBE=1 MΩ IEB=10 µA VCE=10 V, f=1 MHz VCB=10 V, f=1 MHz VEB=5 V, f=1 MHz Capacitance CCE CCB CEB 7 8 38 pF pF pF Thermal Resistance RthJA 250 K/W Coupling Capacitance CC 0.6 pF Coupling Transfer Ratio SFH 640-1 IC/IF Package SFH 640-2 IC/IF SFH 640-3 IC/IF 40 13 63 22 100 34 80 % 125 % 200 % IF=10 mA, VCE=10 V IF=1 mA, VCE=10 V IF=10 mA, VCE=10 V IF=1 mA, VCE=10 V IF=10 mA, VCE=10 V IF=1 mA, VCE=10 V 30 45 70 Saturation Voltage, Collector-Emitter SFH 640-1 SFH 640-2 SFH 640-3 VCEsat VCEsat VCEsat 0.25 0.25 0.25 0.4 0.4 0.4 V V V IF= 10 mA, IC=2 mA IF= 10 mA, IC=3.2 mA IF=10 mA, IC=5 mA Leakage Current, Collector-Emitter ICER 1 100 nA VCE=200 V, RBE=1 MΩ Figure 1. Switching times measurement-test circuit and waveform INPUT 0 RL IF VCC IC OUTPUT 0 10% 47Ω ton toff tpdon tpdof td tr tr ts 10% 50% 50% 90% 90% Switching Times (Typical) IC=2 mA (to adjust by IF), RL=100 Ω, TA=25°C, VCC=10 V Description Symbol Values Unit Turn-On Time tON 5 µs Rise Time tR 2.5 µs Turn-Off Time tOFF 6 µs Fall Time tF 5.5 µs SFH640 5–2 Figure 2. Current transfer ratio (typ.) VCE=10 V, TA=25°C, normalized to IF=10 mA, NCTR=f(IF) Figure 5. Output characteristics (typ.) TA=25°C, ICE=f(VCE, IF) Figure 8. Permissible loss diode IF= f(TA) Figure 3. Diode forward voltage (typ.) VF=f(IF,TA) Figure 6. Transistor capacitances (typ.) TA=25°C, f=1 MHz, CCE=f(VCE) CCB=f (VCB), CEB=f (VEB) Figure 9. Permissible power dissipation PIOT=f(TA) Figure 4. Output characteristics (typ.) TA=25°C, ICE=f(VCE, IB) Figure 7. Collector-emitter leakage current (typ.) IF=0, RBE=1 MW, ICER=f(VCE) SFH640 5–3