CNY17 SERIES TRIOS“ PHOTOTRANSISTOR OPTOCOUPLER FEATURES • High Current Transfer Ratio CNY17-1, 40 to 80% CNY17-2, 63 to 125% CNY17-3, 100 to 200% CNY17-4, 160 to 320% • Breakdown Voltage, 5300 VACRMS • Field-Effect Stable by TRIOS* • Long Term Stability • Industry Standard Dual-in-Line Package • Underwriters Lab File #E52744 V • VDE #0884, Available with Option 1 D E DESCRIPTION The CNY17 is an optically coupled pair consisting of a Gallium Arsenide infrared emitting diode optically coupled to a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The CNY17 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation. Dimensions in inches (mm) Pin One ID 3 2 1 Anode 1 .248 (6.30) .256 (6.50) 6 Base Cathode 2 4 5 5 Collector NC 3 6 4 Emitter .335 (8.50) .343 (8.70) .300 (7.62) typ. .039 (1.00) Min. .130 (3.30) .150 (3.81) 4° typ. 18° typ. .020 (.051) min. .031 (0.80) .035 (0.90) .018 (0.45) .022 (0.55) .100 (2.54) typ. .010 (.25) .014 (.35) .110 (2.79) .150 (3.81) .300 (7.62) .347 (8.82) Characteristics (TA=25°C) Symbol Unit Condition Maximum Ratings (TA=25°C) Emitter Emitter Reverse Voltage .................................................6 V Forward Current............................................ 60 mA Surge Current (t≤10µs)................................... 2.5 A Power Dissipation.......................................100 mW Forward Voltage VF 1.25 (≤1.65) V IF = 60 mA Breakdown Voltage VBR ≥6 V IR = 10 mA Reverse Current IR 0.01 (≤10) µA VR = 6 V 25 pF VR = 0 V, f =1 MHz Rthjamb 750 K/W Capacitance CCE CCB CEB 5.2 6.5 7.5 pF pF pF Thermal Resistance Rthjamb 500 K/W Collector-Emitter Saturation Voltage VCEsat 0.25 (≤0.4) V Coupling Capacitance CC 0.6 pF Detector Collector-Emitter Breakdown Voltage ...............70 V Emitter-Base Breakdown Voltage .......................7 V Collector Current .......................................... 50 mA Collector Current (t <1 ms)......................... 100 mA Power Dissipation.......................................150 mW Package Isolation Test Voltage (Between emitter & detector referred to climate DIN 40046, part 2, Nov. 74) ..............................5300 VACRMS Creepage Distance .......................................... ≥7 mm Clearance Distance ......................................... ≥7 mm Isolation Thickness between Emitter and Detector ................................. ≥0.4 mm Comparative Tracking Index per DIN IEC 112/ VDE0303, part 1.............................................175 Isolation Resistance VIO=500 V, TA=25°C ................................... ≥1012 Ω VIO=500 V, TA=100°C ................................ ≥1011 Ω Storage Temperature ................... –55°C to +150°C Operating Temperature ............... –55°C to +100°C Junction Temperature ....................................100°C Soldering Temperature (max . 10 s, dip soldering: distance to seating plane ≥1.5 mm) ..........260°C Capacitance Thermal Resistance Detector VCE =5 V, f =1 MHz VCB =5 V, f =1 MHz VEB =5 V, f =1 MHz Package 5–1 This document was created with FrameMaker 4.0.4 IF =10 mA, IC=2.5 mA Current Transfer Ratio and Collector-Emitter Leakage Current by dash number (TA=25°C) IC/IF at VCE=5 V (IF=10 mA) IC/IF at VCE=5 V (IF=1 mA) Collector-Emitter Leakage Current (VCE=10 V) (ICEO) -1 -2 -3 -4 Unit 40-80 63125 100200 160320 % 30 (>13) 45 (>22) 70 (>34) 90 (>56) % 2 (≤ 50) 2 (≤ 50) 5 (≤ 100) 5 (≤ 100) nA Figure 3. Current transfer ratio versus diode current (TA=–25°C, VCE=5 V) IC/IF=f (IF) Figure 1. Linear Operation (without saturation) RL=75 Ω IF IC VCC=5 V Figure 4. Current transfer ratio versus diode current (TA=0°C, VCE=5 V) IC/IF=f (IF) 47 Ω IF=10 mA, VCC=5 V, TA=25 °C Load Resistance RL 75 Ω Turn-On Time tON 3.0 µs Rise Time tR 2.0 µs Turn-Off Time tOFF 2.3 µs Fall Time tf 2.0 µs Cut-off Frequency fCO 250 kHz Figure 2. Switching Operation (with saturation) IF 1 KΩ VCC=5 V Figure 5. Current transfer ratio versus diode current (TA=25°C, VCE=5 V) IC/IF=f (IF) 47 Ω -1 (IF=20 mA) -2 and -3 (IF=10 mA) -4 (IF=5 mA) Turn-On Time tON 3.0 4.2 6.0 µs Rise Time tR 2.0 3.0 4.6 µs Turn-Off Time tOFF 18 23 25 µs Fall Time tF 11 14 15 µs 5–2 Figure 6. Current transfer ratio versus diode current (TA=50°C) VCE=5 V, IC/IF=f (IF) Figure 9. Transistor characteristics (B=550) CNY17-3, -4 IC=f(VCE) (TA=25°C, IF=0) Figure 7. Current transfer ratio versus diode current (TA=75°C) VCE=5 V Figure 10. Output characteristics CNY17-3, -4 (TA=25°C) IC=f(VCE) Figure 8. Current transfer ratio versus temperature (IF=10 mA, VCE=5 V) IC/IF=f (T) Figure 11. Forward voltage VF=f (IF) 5–3 Figure 12. Collector emitter off-state current ICEO=f (V, T) (TA=25°C, IF=0) Figure 13. Saturation voltage versus collector current and modulation depth CNY17-1 VCEsat=f (IC) (TA=25°C) Figure 14. Saturation voltage versus collector current and modulation depth CNY17-2 VCEsat=f (IC) (TA=25°C ) Figure 15. Saturation voltage versus collector current and modulation depth CNY17-3 VCEsat=f (IC) (TA=25°C) Figure 17. Permissible pulse load D=parameter, TA=25°C, IF=f (tp) Figure 19. Permissible forward current Ptot=f (TA) Figure 16. Saturation voltage versus collector current and modulation depth CNY17-4 VCEsat=f (IC) (TA=25°C) Figure 18. Permissible power dissipation transistor and diode Ptot=f (TA) Figure 20. Transistor capacitance C=f(VO) (TA=25°C, f=1 MHz) 5–4