BB833... Silicon Tuning Diodes Extended frequency range up to 2.5 GHz; spezial design for use in TV-sat indoor units High capacitance ratio BB833 1 2 Type BB833 Package SOD323 Configuration single LS (nH) Marking 1.8 white X Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage- VRM 35 Forward current IF 20 mA Operating temperature range Top -55 ... 150 °C Storage temperature Tstg -55 ... 150 Value Unit V R 5k 1 Nov-07-2002 BB833... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. - - - - Unit max. DC Characteristics Reverse current IR VR = 30 V VR = 30 V, TA = 85 °C nA 20 500 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 8.5 9.3 10 VR = 28 V, f = 1 MHz 0.6 0.75 0.9 11 12.4 - CT/CT - - 3 % rS - 1.8 - Capacitance ratio CT1 /CT28 VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching1) VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 1 V, f = 470 MHz 1For details please refer to Application Note 047. 2 Nov-07-2002 BB833... Diode capacitance CT = (VR) Temperature coefficient of the diode capacitance TCc = (VR ) f = 1MHz 12 10 -3 EHD07121 pF 10 1/°C 8 TCc CT BB 833 10 -4 6 4 2 0 10 0 10 1 10 -5 -1 10 10 2 V 10 0 10 1 V 10 2 VR VR 3 Nov-07-2002