BB837 /BB857... Silicon Tuning Diode For SAT -indoor-units High capacitance ratio Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure BB837 BB857 1 2 Type BB837 BB857 Package SOD323 SCD80 Configuration single single LS (nH) Marking 1.8 M 0.6 OO Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage VRM 35 Forward current IF 20 mA Operating temperature range Top -55 ... 150 °C Storage temperature Tstg -55 ... 150 Value Unit V R 5k 1 Nov-07-2002 BB837 /BB857... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Reverse current IR nA VR = 30 V - - 10 VR = 30 V, TA = 85 °C - - 200 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 6 6.6 7.2 VR = 25 V, f = 1 MHz 0.5 0.55 0.65 VR = 28 V, f = 1 MHz 0.45 0.52 - CT1 /CT25 10.2 12 - CT1 /CT28 9.7 12.7 - CT/CT - - 5 % rS - 1.5 - Capacitance ratio - VR = 1 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching1) VR = 1V ... 28V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz 1For details please refer to Application Note 047 2 Nov-07-2002 BB837 /BB857... Diode capacitance CT = (VR ) Normalized diode capacitance C(TA) /C(25°C)= (TA ); f = 1MHz f = 1MHz 10 1.035 - pF 1V 1.025 CTA/C 25 8 CT 7 6 2V 1.02 25V 1.015 28V 1.01 5 1.005 4 1 0.995 3 0.99 2 0.985 1 0.98 0 0 10 10 1 V 10 0.975 -30 2 -10 10 30 50 70 VR Reverse current IR = VR = 28V TA = Parameter (VR) 10 3 3 pA 80°C pA 60°C 10 2 2 IR 28°C IR 10 100 TA Reverse current I R = (TA) 10 °C 10 1 10 1 10 0 10 0 -30 -10 10 30 50 70 °C 10 -1 0 10 100 TA 10 1 V 10 2 VR 3 Nov-07-2002