BB 837 Silicon Tuning Diode Preliminary data •Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units •High capacitance ratio Type Marking Ordering Code Pin Configuration Package BB 837 M Q62702-B0904 1=C 2=A SOD-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage (R ≥ 5kΩ ) VRM 35 Forward current IF 20 mA Operating temperature range Top 55 ...+150 °C Storage temperature Tstg 55 ...+150 Semiconductor Group 1 Value Unit V Mar-27-1998 BB 837 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 10 IR - - 200 DC characteristics Reverse current nA VR = 30 V Reverse current VR = 30 V, TA = 85 °C AC characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 6 6.6 7.2 VR = 25 V, f = 1 MHz - 0.55 - VR = 28 V, f = 1 MHz 0.45 0.54 0.65 CT1/CT25 - 12 - CT1/CT28 9.7 12.2 - - ∆CT/CT - - 5 % rs - 1.5 - Ω Ls - 1.4 - nH Capacitance ratio VR = 1 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1V to 28V, f = 1 MHz Capacitance matching VR = 1V to 28V, f = 1 MHz Series resistance VR = 1 V, f = 470 MHz Series inductance Semiconductor Group 2 Mar-27-1998 BB 837 Diode capacitance CT = f (VR ) f = 1MHz 10 pF 8 CT 7 6 5 4 3 2 1 0 0 10 10 1 V VR Semiconductor Group 3 Mar-27-1998