IDC08S120E 1200V thinQ!TM SiC Schottky Diode Features: Applications: A • • • • • C • • • • Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching Behaviour Qualified According to JEDEC1) Based on Target Applications Motor Drives / Solar Inverters High Voltage CCM PFC Switch Mode Power Supplies High Voltage Multipliers Chip Type VBR IF Die Size Package IDC08S120E 1200V 7.5A 2.012 x 2.012 mm2 sawn on foil Mechanical Parameters Raster size 2.012 x 2.012 Anode pad size 1.476 x 1.476 mm2 Area total 4.05 Thickness 362 µm Wafer size 100 mm Max. possible chips per wafer 1652 Passivation frontside Photoimide Pad metal 3200 nm Al Backside metal Ni Ag –system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Al, ≤ 350µm Reject ink dot size ∅ ≥ 0.3 mm Recommended storage environment Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009 IDC08S120E Maximum Ratings Parameter Symbol Condition Value Repetitive peak reverse voltage VRRM T v j =25 °C 1200 DC blocking voltage VDC Continuous forward current, Tvj < 150°C 7.5 TC =25°C , tP =10 ms 39 TC =150°C , tP =10 ms 33 IF,RM TC = 100°C , Tvj = 1 50°C , D=0 . 1 32 Non-repetitive peak forward current IF,max TC =25°C , t P =1 0µs 160 i 2 t value ∫i TC =25°C , tP =10 ms 7 TC =150°C , tP =10 ms 5 Operating junction and storage temperature range Tvj , Tstg Surge non repetitive forward current, sine halfwave Repetitive peak forward current, limited by thermal resistance Rth IF,SM 2 V 1200 IF limited by Tvjmax Unit dt A A2s -55...+175 °C Static Characteristics (tested on wafer) Parameter Symbol Conditions Value min. Typ. max. Unit Reverse current IR V R =12 00 V , Tvj = 2 5°C 8 180 µA Diode forward voltage VF I F =7 .5 A, Tvj =2 5°C 1.6 1.8 V Static Characteristics (not subject to production test - verified by design / characterization) Parameter Symbol Conditions Value min. Typ. max. Unit Reverse current IR V R =12 00 V , Tvj = 1 50°C 30 1000 µA Diode forward voltage VF I F =7 .5 A, Tvj =1 50°C 2.5 3 V Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009 IDC08S120E Dynamic Characteristics (not subject to production test - verified by design / characterization) Parameter Symbol Total capacitive charge3) QC Conditions I F <= I F , m a x Tvj = 1 50°C Value min. Typ. max. 27 Unit nC d i /d t= 200 A/ µs Switching time 2) Total capacitance tc C V R =12 00 V f=1 MH z Tvj = 1 50°C <10 V R =1 V 380 V R =30 0 V 30 V R =60 0 V 27 1) ns pF J-STD20 and JESD22 tc is the time constant for the capacitive displacement current waveform (independent from Tvj = 1 50°C , ILOAD and di/dt), different from trr, which is dependent on Tvj = 15 0°C , ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier inject. 3) Only capacitive charge occurring, guaranteed by design (independent from Tvj, ILOAD and di/dt). 2) Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009 IDC08S120E Chip drawing A A: Anode pad Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009 IDC08S120E Description AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009