IDC40D120T6H Diode EMCON 4 High Power Chip FEATURES: • 1200V EMCON 4 technology • soft, fast switching • low reverse recovery charge • small temperature coefficient A This chip is used for: • medium / high power modules C Applications: • medium / high power drives Chip Type VR IF Die Size Package IDC40D120T6H 1200V 75A 6.30 x 6.30 mm2 sawn on foil MECHANICAL PARAMETER: Raster size 6.30 x 6.30 Area total / active 39.69 / 29.98 Anode pad size 5.346 x 5.346 mm 2 Thickness 120 µm Wafer size 150 mm Flat position 180 deg Max. possible chips per wafer Passivation frontside Pad metall Backside metall Die bond Wire bond Reject ink dot size Recommended storage environment 367 pcs Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, AIM PMD D CID T, L4672A, Edition 0.9, 26.06.07 IDC40D120T6H Maximum Ratings Parameter Symbol Repetitive peak reverse voltage VRRM Continuous forward current limited by Tjmax Maximum repetitive forward current limited by Tjmax Maximum junction and storage temperature Condition Value 1200 Unit V 1) IF A IFRM 150 Tvj,max , Ts t g -40...+175 °C 2) Reverse bias safe operating area (RBSOA) 1) 2) I F , m a x = 150A, V R , m a x = 1200V, Tvj,op ≤ 150°C, P m a x = tbd kW depending on thermal properties of assembly not subject to production test - verified by design/characterisation Static Electrical Characteristics (tested on wafer), Tj=25 °C Parameter Symbol Reverse leakage current IR Cathode-Anode breakdown Voltage V Br Forward voltage drop VF Conditions Value min. V R = 1 2 00V Tj= 2 5 ° C I R =0. 2 5 mA Tj= 2 5 ° C 1200 I F= 7 5 A Tj= 2 5 ° C 1.55 Typ. max. 14 Unit µA V 1.9 2.25 V Dynamic Electrical Characteristics inductive load (not subject to production test - verified by design/characterization) Parameter Peak reverse recovery current Symbol Conditions I F= A IRM di/dt=A/ µs VR = V V GE =- 1 5V Reverse recovery charge I F= A Qr di/dt=A/ µs VR = V V GE =- 1 5V I F= A Reverse recovery energy E rec di/dt=A/ µs VR = V V GE =- 1 5V 2) Value min. Typ. 2) max. Unit T j = 25 °C Tj = 125 °C tbd A tbd µC tbd mJ Tj = 150 °C T j = 25 °C Tj = 125 °C Tj = 150 °C T j = 25 °C Tj = 125 °C Tj = 150 °C values also influenced by parasitic L- and C- in measurement and package. Edited by INFINEON Technologies, AIM PMD D CID T, L4672A, Edition 0.9, 26.06.07 IDC40D120T6H CHIP DRAWING: Edited by INFINEON Technologies, AIM PMD D CID T, L4672A, Edition 0.9, 26.06.07 IDC40D120T6H FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet tbd Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, AIM PMD D CID T, L4672A, Edition 0.9, 26.06.07