SIDC11D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction • No forward recovery Chip Type VBR SIDC11D60SIC3 600V IF C Die Size 4A A Applications: • SMPS, PFC, snubber Package 1.15 x 0.97 mm2 sawn on foil Ordering Code Q67050-A4161A104 MECHANICAL PARAMETER: Raster size 1.15 x 0.97 Anode pad size 0.85 x 0.67 mm Area total / active 2 1.116 / 0.581 mm Thickness 355 µm Wafer size 75 mm Flat position 0 deg Max. possible chips per wafer 3555 pcs Passivation frontside Photoimide Anode metalization 3200 nm Al Cathode metalization Die bond 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Wire bond Al, ≤ 250µm Reject Ink Dot Size ∅ ≥ 0.3 mm Recommended Storage Environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004 SIDC11D60SIC3 Maximum Ratings Parameter Symbol Repetitive peak reverse voltage VRRM 600 Surge peak reverse voltage V RSM 600 Continuous forward current limited by Tjmax Single pulse forward current Condition Value IF V 4 I FSM TC =25° C, tP =10 ms sinusoidal 12.5 I FRM TC = 100° C, T j = 1 5 0 ° C, D=0.1 18 Non repetitive peak forward current I FMAX TC =25° C, tp=10µs 40 Operating junction and storage temperature Tj , Ts t g (depending on wire bond configuration) Maximum repetitive forward current limited by Tjmax Unit A -55...+175 °C Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified Parameter Reverse leakage current Forward voltage drop Symbol Conditions Value min. Typ. max. Unit IR V R =600V Tj= 2 5 ° C 15 200 µA VF I F =4A Tj= 2 5 ° C 1.7 1.9 V Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component Parameter Total capacitive charge Symbol QC Conditions Value min. Typ. max. Unit I F =4A di/dt=200A/µs Tj = 150 °C 13 nC Tj = 150 °C n.a. ns V R = 1V 150 V R =300V 10 V R =600V 7 V R =400V Switching time t rr I F =4A di/dt=200A/µs VR = 4 0 0 V Total capacitance C I F =4A di/dt=200A/µs T j =25°C f=1MHz Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004 pF SIDC11D60SIC3 CHIP DRAWING: 670 40 R1 970 1150 850 Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004 SIDC11D60SIC3 FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refe rs to the device data sheet INFINEON TECHNOLOGIES SDP04S60 Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strasse 53 D-81541 München © Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004