INFINEON BGA420E6327

BGA420
Si-MMIC-Amplifier in SIEGET 25-Technologie
• Cascadable 50 Ω-gain block
• Unconditionally stable
3
2
4
• Gain |S 21|2 = 13 dB at 1.8 GHz
1
IP3out = +13 dBm at 1.8 GHz
(VD = 3 V, ID = typ. 6.7 mA)
• Noise figure NF = 2.2 dB at 1.8 GHz
VD
• Reverse isolation > 28 dB and
4
return loss IN / OUT > 12 dB at 1.8 GHz
3
• Pb-free (RoHS compliant) package
Circuit Diagram
IN
OUT
1
2
GND
EHA07385
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BGA420
Marking
BLs
1, IN
Pin Configuration
2, GND 3, OUT 4, VD
Package
SOT343
Maximum Ratings
Parameter
Symbol
Value
Unit
Device current
ID
15
mA
Device voltage
VD
6
Total power dissipation
Ptot
90
mW
0
dBm
V
TS = 110 °C
RF input power
PRFin
Junction temperature
Tj
150
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150
°C
Thermal Resistance
Junction - soldering point1)
1For
RthJS
≤ 410
K/W
calculation of RthJA please refer to Application Note Thermal Resistance
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2011-07-26
BGA420
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Symbol
Parameter
Values
Unit
min.
typ.
max.
5.4
6.7
8
AC characteristics VD = 3 V, Zo = 50 Ω
Device current
ID
Insertion power gain
|S21|2
dB
f = 0.1 GHz
f = 1 GHz
17
15
19
17
-
f = 1.8 GHz
11
25
13
28
-
f = 0.1 GHz
f = 1 GHz
-
1.9
2.2
2.3
2.6
f = 1.8 GHz
IP3out
10
2.3
13
2.7
-
P-1dB
-6
-2.5
-
RLin
8
11
-
RLout
12
16
-
Reverse isolation
f = 1.8 GHz
Noise figure
S12
mA
NF
Intercept point at the output
f = 1 GHz
1dB compression point
f = 1 GHz
Return loss input
f = 1.8 GHz
Return loss output
f = 1.8 GHz
dBm
dB
Typical biasing configuration
+VD
100 pF
RF OUT
100 pF
10 nF
4
3
BGA 420
1
100 pF
2
GND
RF IN
EHA07386
Note: 1) Large-value capacitors should be connected from pin 4 to ground right at the device
to provide a low impedance path.
2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin
boards are recommended to minimize the parasitic inductance to ground.
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2011-07-26
BGA420
Typical S-Parameters at TA = 25 °C
f
S11
GHz
MAG
S21
ANG
VD = 3 V, Zo = 50 Ω
0.1
0.5686
-8.5
0.5
0.5066
-19.2
0.8
0.4404
-28.7
1
0.3904
-34.6
1.5
0.2841
-50.5
1.8
0.2343
-60.6
1.9
0.2136
-64.1
2
0.2062
-68.4
2.4
0.1688
-89.7
3
0.1558
-104.9
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
9.314
8.393
7.352
6.69
5.244
4.567
4.355
4.165
3.417
2.861
170.6
149.4
135.2
126.8
111.1
104
102
99.7
91.7
85.3
0.0268
0.0248
0.0236
0.024
0.0314
0.0378
0.0406
0.0426
0.0549
0.0682
12.7
11.7
25.6
35.9
57.2
63.5
66.1
67.2
71.4
73.1
0.2808
0.2613
0.2361
0.2144
0.1398
0.0979
0.0838
0.0689
0.0224
0.0284
-8.6
-3.8
-6.7
-9
-15
-18.2
-21.5
-22.2
-48
-147.5
Spice-model BGA 420
+V
BGA 420-chip
including parasitics
14
R2
13
R1
IN
OUT
R3
C1
11
C P3
T1
C P1
C P4
C P2
12
GND
T1
T501
R1
14.5kΩ
R2
140Ω
R3
2.4kΩ
C1
2.3pF
CP1
0.2pF
CP2
0.2pF
CP3
0.6pF
CP4
0.1pF
EHA07387
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2011-07-26
BGA420
Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :
fA
V
BF =
83.23
VAF =
0.21024
39.251
NF =
1.0405
0.16493
A
ISE =
15.761
fA
IKF =
NE =
1.7763
-
BR =
10.526
-
NR =
0.96647
-
VAR =
34.368
V
IKR =
0.25052
A
ISC =
0.037223
fA
NC =
1.3152
-
RB =
15
Ω
IRB =
0.21215
A
RBM =
1.3491
Ω
RE =
1.9289
RC =
0.12691
Ω
CJE =
3.7265
fF
VJE =
0.70367
V
MJE =
0.37747
TF =
4.5899
ps
XTF =
0.3641
-
VTF =
0.19762
V
ITF =
1.3364
mA
PTF =
0
deg
CJC =
96.941
fF
VJC =
0.99532
V
MJC =
0.48652
-
XCJC =
0.08161
-
TR =
1.4935
ns
CJS =
0
fF
VJS =
0.75
V
MJS =
0
-
XTB =
0
-
EG =
1.11
eV
XTI =
3
-
FC =
0.99469
-
TNOM
300
K
-
RS =
20
Ω
LBI =
LBO =
LEI =
LEO =
LCI =
LCO =
CBE =
CCB =
CCE =
C1 =
C2 =
C3 =
L1 =
L2 =
0.36
0.4
0.3
0.15
0.36
0.4
95
6
132
28
88
8
0.6
0.4
nH
nH
nH
nH
nH
nH
fF
fF
fF
fF
fF
fF
nH
nH
IS =
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
2
IS =
fA
N=
1.02
All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:
L2
+V
C1
C3
L1
C CB
C2
14
L BO
L BI
IN
11
BGA 420
Chip
12
C BE
13
L CI
L CO
OUT
C’-E’Diode
C CE
L EI
L EO
GND
EHA07388
Valid up to 3GHz
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes
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2011-07-26
BGA420
Insertion power gain |S21|2 = f (f)
Insertion power gain |S21 |2 = f (f)
VD = 3 V
VD, ID = parameter
TA = parameter
25
22
VD=5V, ID=12.4mA
VD=4V, ID=9.4mA
VD=3V, ID=6.4mA
VD=2V, ID=3,4mA
TA=-20°C
TA=+25°C
TA=+75°C
18
|S21|2
|S21|2
dB
dB
15
16
14
12
10
10
8
6
5
4
2
0 -1
10
10
0
GHz
10
0 -1
10
1
10
0
GHz
f
10
1
10
1
f
Noise figure NF = f (f)
Noise figure NF = f (f)
VD = 3V
VD,ID = parameter
TA = parameter
5
3.5
dB
dB
2.5
NF
NF
VD=5V, ID=12.4mA
VD=3V, ID=6.4mA
TA=+75°C
TA=+25°C
TA=-20°C
3
2
1.5
2
1
1
0.5
0 -1
10
10
0
GHz
10
0 -1
10
1
f
10
0
GHz
f
5
2011-07-26
BGA420
Intercept point at the output
Intercept point at the output
IP3out = f (f)
IP3out = f (f), VD = 3V
VD,ID = parameter
TA = parameter
20
dBm
16
12
VD=5V, ID=12.4mA
VD=4V, ID=9.4mA
VD=3V, ID=6.4mA
VD=2V, ID=3.4mA
dBm
10
IP3out
IP3out
9
14
12
8
7
10
6
8
5
TA=-20°C
TA=+25°C
TA=75°C
4
6
3
4
2
2
0 -1
10
1
10
0
GHz
10
0 -1
10
1
f
10
0
GHz
10
f
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2011-07-26
1
Package SOT343
BGA420
Package Outline
0.9 ±0.1
2 ±0.2
0.1 MAX.
1.3
0.1
A
1
2
0.1 MIN.
0.15
1.25 ±0.1
3
2.1 ±0.1
4
0.3 +0.1
-0.05
+0.1
0.15 -0.05
0.6 +0.1
-0.05
4x
0.1
0.2
M
M
A
Foot Print
1.6
0.8
0.6
1.15
0.9
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BGA420
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.3
8
4
Pin 1
2.15
1.1
7
2011-07-26
BGA420
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
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2011-07-26