BFP540FESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V (HBM) • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • SIEGET 45 - Line • Pb-free (ROHS compliant) package 1) • Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP540FESD Marking AUs 1=B Pin Configuration 2=E 3=C 4=E - Package - TSFP-4 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA > 0°C 4.5 TA ≤ 0°C 4 Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 1 Collector current IC 80 Base current IB 8 Total power dissipation2) Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 mA TS ≤ 80 °C 1Pb-containing 2T package may be available upon special request S is measured on the collector lead at the soldering point to the pcb 2010-03-12 1 BFP540FESD Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 1) RthJS ≤ 280 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 4.5 5 - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 10 µA hFE 50 110 170 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V, pulse measured 1For calculation of RthJA please refer to Application Note Thermal Resistance 2010-03-12 2 BFP540FESD Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 21 30 - Ccb - 0.16 0.26 Cce - 0.4 - Ceb - 0.55 - GHz IC = 50 mA, VCE = 4 V, f = 1 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt - 0.9 1.4 IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt - 1.3 - G ms - 20 - dB G ma - 14.5 - dB Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz |S21e|2 Transducer gain IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz 15.5 18 - - 13 - IP 3 - 24.5 - P-1dB - 11 - IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 3GHz Third order intercept point at output2) dB dBm VCE = 2 V, I C = 20 mA, ZS = ZL = 50Ω, f = 1.8GHz 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz 1G ma = |S21e / S12e| (k-(k²-1)1/2 ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz 2010-03-12 3 BFP540FESD SPICE Parameter For the SPICE model as well as for S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.model. Please consult our website and download the latest versions before actually starting your design. You find the BFP540FESD SPICE model in the internet in MWO- and ADS- tools very quickly and conveniently. The simulation data have been generated and verified using typical devices. The BFP540FESD SPICE model reflects the typical DC- and RF-performance with high accuracy. The SPICE model of BFP540FESD will be available in Q02 / 2010. 2010-03-12 4 Package TSFP-4 BFP540FESD Package Outline 0.55 ±0.04 0.2 ±0.05 3 1 1.2 ±0.05 0.2 ±0.05 4 2 0.2 ±0.05 10˚ MAX. 0.8 ±0.05 1.4 ±0.05 0.15 ±0.05 0.5 ±0.05 0.5 ±0.05 Foot Print 0.9 0.45 0.35 0.5 0.5 Marking Layout (Example) Manufacturer BFP420F Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 1.4 8 4 Pin 1 0.7 1.55 2010-03-12 5 BFP540FESD Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2010-03-12 6