NTNS3164NZ Small Signal MOSFET 20 V, 361 mA, Single N−Channel, SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package Features http://onsemi.com • Single N−Channel MOSFET • Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for • • • Extremely Thin Environments Such as Portable Electronics Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm Package 1.5 V Gate Drive These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX 0.7 W @ 4.5 V 1.0 W @ 2.5 V 20 V 361 mA 2.0 W @ 1.8 V 4.0 W @ 1.5 V Applications • • • • ID Max High Side Switch High Speed Interfacing Level Shift and Translate Optimized for Power Management in Ultra Portable Solutions N−CHANNEL MOSFET D (3) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±8 V ID 361 mA Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C 260 t≤5s TA = 25°C 427 Steady State TA = 25°C PD t≤5s Pulsed Drain Current S (2) mW 155 217 1082 mA TJ, TSTG −55 to 150 °C Source Current (Body Diode) (Note 2) IS 129 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Operating Junction and Storage Temperature MARKING DIAGRAM 3 IDM tp = 10 ms G (1) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% 2 1 64 M SOT−883 (XDFN3) CASE 506CB 64 M = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping† NTNS3164NZT5G SOT−883 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 March, 2013 − Rev. 0 1 Publication Order Number: NTNS3164NZ/D NTNS3164NZ THERMAL RESISTANCE RATINGS Symbol Max Junction−to−Ambient – Steady State (Note 3) Parameter RθJA 806 Junction−to−Ambient – t ≤ 5 s (Note 3) RθJA 575 Unit °C/W 3. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS ID = 250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 20 V Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±5 V VGS(TH) VGS = VDS, ID = 250 mA V 23 TJ = 25°C mV/°C 1 mA ±10 mA 1.0 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ 0.4 1.8 RDS(on) mV/°C VGS = 4.5 V, ID = 200 mA 0.5 0.7 VGS = 2.5 V, ID = 100 mA 0.7 1.0 VGS = 1.8 V, ID = 50 mA 1.0 2.0 VGS= 1.5 V, ID = 10 mA 1.2 4.0 Forward Transconductance gFS VDS = 5 V, ID = 200 mA 1.26 Source−Drain Diode Voltage VSD VGS = 0 V, IS = 100 mA 0.75 W S 1.2 V CHARGES & CAPACITANCES Input Capacitance CISS 24 Output Capacitance COSS Reverse Transfer Capacitance CRSS 3.4 Total Gate Charge QG(TOT) 0.8 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 0 V, freq = 1 MHz, VDS = 10 V VGS = 4.5 V, VDS = 10 V; ID = 200 mA 5.0 0.1 0.2 pF nC 0.1 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 10 VGS = 4.5 V, VDD = 10 V, ID = 200 mA, RG = 2 W tf 11 67 31 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 ns NTNS3164NZ TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 0.9 0.8 0.7 4.5 V 1.0 2.5 V 4.0 V 3.0 V 3.5 V 1.8 V 0.6 0.5 0.4 1.5 V 0.3 0.2 0.1 0 1.2 V 0 0.5 1.0 1.5 2.0 2.5 0.8 TJ = −55°C 0.6 0.5 0.4 0.3 0.2 0.1 0 3.0 0 0.5 1.0 1.5 2.0 2.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 3.0 5.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 25°C 4.0 3.5 3.0 2.5 2.0 ID = 200 mA 1.5 1.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 4.5 TJ = 25°C 4.0 3.5 VGS = 1.5 V 3.0 2.5 VGS = 1.8 V 2.0 1.5 1.0 VGS = 2.5 V 0.5 0 VGS = 4.5 V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1000 1.8 1.7 1.6 VGS = 4.5 V ID = 200 mA TJ = 150°C 1.5 1.4 1.3 1.2 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 25°C 0.7 5.0 RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 4.5 0.5 0 VDS = 5.0 V 0.9 VGS = 2.0 V ID, DRAIN CURRENT (A) 1.0 VGS = 1.8 V ID = 50 mA 1.1 1.0 0.9 0.8 0.7 0.6 −50 100 TJ = 125°C 10 TJ = 85°C −25 0 25 50 75 100 125 150 1 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTNS3164NZ TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) 30 CISS 25 VGS, GATE−TO−SOURCE VOLTAGE (V) VGS = 0 V f = 1 MHz TJ = 25°C 20 15 10 COSS 5 0 CRSS 0 2 6 4 8 10 12 16 14 18 20 5 VDS VGS 3 8 6 2 QGD QGS 1 0 4 VDS = 10 V ID = 0.2 A TJ = 25°C 0 0.1 0.2 0.3 0.4 0.5 0.6 2 0.7 0 0.9 0.8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 IS, SOURCE CURRENT (A) t, TIME (ns) td(off) tf VGS = 4.5 V VDD = 10 V tr td(on) 1 10 TJ = 125°C TJ = 25°C 1 TJ = −55°C 0.1 0.01 0.001 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 0.85 10 VGS ≤ 8 V Single Pulse TC = 25°C ID = 250 mA ID, DRAIN CURRENT (A) 0.80 0.75 VGS(th) (V) 10 4 100 10 12 QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) 35 0.70 0.65 0.60 0.55 1 10 ms 100 ms 1 ms 0.1 10 ms 0.01 RDS(on) Limit Thermal Limit Package Limit 0.50 0.45 −50 −25 0 25 50 75 100 125 150 0.001 0.1 1 dc 10 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Threshold Voltage Figure 12. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 NTNS3164NZ TYPICAL CHARACTERISTICS R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W) 900 RqJA = 806°C/W Steady State 800 700 600 500 400 Duty Cycle = 0.5 0.05 300 200 0.2 100 0.1 0 0.02 0.01 Single Pulse 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 t, TIME (s) Figure 13. FET Thermal Response http://onsemi.com 5 1E+00 1E+01 1E+02 1E+03 NTNS3164NZ PACKAGE DIMENSIONS SOT−883 (XDFN3), 1.0x0.6, 0.35P CASE 506CB ISSUE A PIN ONE REFERENCE 0.10 C ÉÉÉ 0.10 C E DIM A A1 b D D2 e E E2 L TOP VIEW NOTE 3 0.10 C 0.10 C 3X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. EXPOSED COPPER ALLOWED AS SHOWN. A B D A1 SIDE VIEW A C SEATING PLANE RECOMMENDED SOLDER FOOTPRINT* 1.10 D2 2X E2 e/2 1 e 0.10 M b C A B 0.05 M C 2X 3X MILLIMETERS MIN MAX 0.340 0.440 0.000 0.030 0.075 0.200 0.950 1.075 0.620 BSC 0.350 BSC 0.550 0.675 0.425 0.550 0.170 0.300 L 2X 0.41 0.43 1 0.55 0.20 PACKAGE OUTLINE DIMENSIONS: MILLIMETERS BOTTOM VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTNS3164NZ/D