NTNS3C68NZ D

NTNS3C68NZ
Small Signal MOSFET
12 V, 758 mA, Single N−Channel SOT−883
(XDFN3) 1.0 x 0.6 x 0.4 mm Package
Features
• Single N−Channel MOSFET
• Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for
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Extremely Thin Environments such as Portable Electronics
MOSFET
• Low RDS(on) Solution in Ultra Small 1.0 x 0.6 mm Package
• 1.8 V Gate Drive
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
V(BR)DSS
ID MAX
0.160 W @ 4.5 V
0.175 W @ 3.7 V
Compliant
0.185 W @ 3.3 V
12 V
Applications
•
•
•
•
RDS(on) MAX
758 mA
0.230 W @ 2.5 V
Load Switch
High Speed Interfacing
Level Shift and Translate
Optimized for Power Management in Ultra Portable Solutions
0.440 W @ 1.8 V
N−Channel MOSFET
D (3)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Value
Units
Drain-to-Source Voltage
VDSS
12
V
Gate-to-Source Voltage
VGS
±8
V
ID
758
mA
Parameter
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
t≤5s
TA = 25°C
Power Dissipation (Note 1)
Steady
State
TA = 25°C
t≤5s
TA = 25°C
Pulsed Drain Current
TA = 85°C
tp = 10 ms
547
898
PD
S (2)
mW
156
MARKING
DIAGRAM
219
3
IDM
2.2
A
TJ,
TSTG
-55 to
150
°C
Source Current (Body Diode) (Note 2)
IS
223
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Operating Junction and Storage
Temperature
G (1)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2 1
SOT−883
(XDFN3)
CASE 506CB
AC M
AC = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NTNS3C68NZT5G
SOT−883
(Pb−Free)
8000 /
Tape & Reel
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Units
Junction-to-Ambient – Steady State (Note 1)
RθJA
800
°C/W
Junction-to-Ambient – t ≤ 5 s (Note 1)
RθJA
570
1. Surface Mounted on FR4 Board using the minimum recommended pad size,
(or 2 mm2), 1 oz Cu.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 0
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTNS3C68NZ/D
NTNS3C68NZ
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
12
Typ
Max
Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = 250 mA, ref to 25°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 9.6 V
Gate-to-Source Leakage Current
IGSS
VDS = 0 V, VGS = ±10 V
VGS(TH)
VGS = VDS, ID = 250 mA
V
11
TJ = 25°C
mV/°C
1.0
mA
±10
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Gate Threshold
Temperature Coefficient
Drain-to-Source On Resistance
VGS(TH)/TJ
0.4
1.0
1.1
RDS(on)
VGS = 4.5 V, ID = 100 mA
0.120
0.160
VGS = 3.7 V, ID = 75 mA
0.130
0.175
VGS = 3.3 V, ID = 75 mA
0.135
0.185
VGS = 2.5 V, ID = 50 mA
0.167
0.230
VGS = 1.8 V, ID = 20 mA
0.250
0.440
VGS = 1.5 V, ID = 10 mA
0.44
Forward Transconductance
gFS
VDS = 5 V, ID = 100 mA
0.8
Source−Drain Diode Voltage
VSD
VGS = 0 V, IS = 100 mA
0.68
V
mV/°C
W
S
1.1
V
CHARGES & CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
67
VGS = 0 V, f = 1 MHz,
VDS = 9.6 V
COSS
19
CRSS
8.5
Total Gate Charge
QG(TOT)
1.8
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
VGS = 4.5 V, VDS = 9.6 V,
ID = 100 mA
pF
nC
0.1
0.3
0.4
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
10.7
VGS = 4.5 V, VDD = 9.6 V,
ID = 100 mA, RG = 2 W
tf
ns
19.4
710
310
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTNS3C68NZ
1.20
1.12
1.04
0.96
0.88
0.80
0.72
0.64
0.56
0.48
0.40
0.32
0.24
0.16
0.08
0.00
0.0
1.2
1.1
VGS = 2.0 V to 4.5 V
VGS = 1.5 V
0.7
0.6
0.5
0.4
0.4
0.6
0.8
1.0
1.2
1.4
1.8
1.6
TJ = 125°C
0.3
0.2
0.1
0
0.4
2.0
TJ = 25°C
TJ = −55°C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2 2.4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
200
190
180
170
160
1000
TJ = 25°C
ID = 5 A
150
140
130
120
110
100
90
80
1.0
2.0
3.0
4.0
5.0
6.0
7.0
TJ = 25°C
900
800
700
VGS = 1.5 V
600
500
400
VGS = 1.8 V
300
200
VGS = 2.5 V
100
0
0.1
8.0
VGS = 4.5 V
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VGS, GATE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
1.5
1.4
1000
VGS = 4.5 V
ID = 0.075 A
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
0.9
0.8
VGS = 1.2 V
0.2
VDS = 10 V
1.0
ID, DRAIN CURRENT (A)
VGS = 1.8 V
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
1.3
1.2
1.1
1.0
0.9
TJ = 125°C
100
10
1
TJ = 85°C
0.8
0.7
0.6
−50
0.1
−25
0
25
50
75
100
125
150
5
6
7
8
9
10
11
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
12
NTNS3C68NZ
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
1000
VGS = 0 V
f = 1 MHz
TJ = 25°C
CISS
100
COSS
CRSS
10
1
0
2
6
4
8
10
12
4.5
4.0
3.5
3.0
2.5
2.0
QGS
1.5
1.0
VDS = 9.6 V
ID = 0.1 A
TJ = 25°C
0.5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
2.0
1
1000
td(off)
IS, SOURCE CURRENT (A)
VGS = 0 V
tf
VGS = 4.5 V
VDS = 9.6 V
ID = 0.1 A
100
tr
td(on)
10
1
10
0.1
0.4
100
TJ = 25°C
TJ = 125°C
0.5
0.6
0.7
0.8
TJ = −55°C
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10
ID, DRAIN CURRENT (A)
t, TIME (ns)
QGD
100 ms
1
1 ms
0.1
0.01
0.001
0.01
0 V ≤ VGS ≤ 4.5 V
Single Pulse
TA = 25°C
TJ = 150°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10 ms
dc
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
1.0
NTNS3C68NZ
TYPICAL CHARACTERISTICS
1000
R(t), EFFECTIVE TRANSIENT
THERMAL RESPONSE (°C/W)
Duty Cycle = 0.5
0.2
100
0.1
0.05
0.02
10
0.01
Single Pulse
1
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
Figure 12. FET Thermal Response
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5
1
10
100
1000
NTNS3C68NZ
PACKAGE DIMENSIONS
SOT−883 (XDFN3), 1.0x0.6, 0.35P
CASE 506CB
ISSUE A
ÉÉÉ
ÉÉÉ
0.10 C
0.10 C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
A B
D
PIN ONE
REFERENCE
E
DIM
A
A1
b
D
D2
e
E
E2
L
TOP VIEW
NOTE 3
0.10 C
A
MILLIMETERS
MIN
MAX
0.340 0.440
0.000 0.030
0.075 0.200
0.950 1.075
0.620 BSC
0.350 BSC
0.550 0.675
0.425 0.550
0.170 0.300
0.10 C
3X
A1
SIDE VIEW
C
RECOMMENDED
SOLDER FOOTPRINT*
SEATING
PLANE
1.10
D2
2X
0.43
1
0.41
0.55
E2
e/2
1
e
b
C A B
2X
0.10
0.05
M
M
C
3X
2X
L
0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
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NTNS3C68NZ/D