NTNS3C68NZ Small Signal MOSFET 12 V, 758 mA, Single N−Channel SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package Features • Single N−Channel MOSFET • Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for www.onsemi.com Extremely Thin Environments such as Portable Electronics MOSFET • Low RDS(on) Solution in Ultra Small 1.0 x 0.6 mm Package • 1.8 V Gate Drive • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS V(BR)DSS ID MAX 0.160 W @ 4.5 V 0.175 W @ 3.7 V Compliant 0.185 W @ 3.3 V 12 V Applications • • • • RDS(on) MAX 758 mA 0.230 W @ 2.5 V Load Switch High Speed Interfacing Level Shift and Translate Optimized for Power Management in Ultra Portable Solutions 0.440 W @ 1.8 V N−Channel MOSFET D (3) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Units Drain-to-Source Voltage VDSS 12 V Gate-to-Source Voltage VGS ±8 V ID 758 mA Parameter Continuous Drain Current (Note 1) Steady State TA = 25°C t≤5s TA = 25°C Power Dissipation (Note 1) Steady State TA = 25°C t≤5s TA = 25°C Pulsed Drain Current TA = 85°C tp = 10 ms 547 898 PD S (2) mW 156 MARKING DIAGRAM 219 3 IDM 2.2 A TJ, TSTG -55 to 150 °C Source Current (Body Diode) (Note 2) IS 223 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature G (1) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1 SOT−883 (XDFN3) CASE 506CB AC M AC = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping† NTNS3C68NZT5G SOT−883 (Pb−Free) 8000 / Tape & Reel THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction-to-Ambient – Steady State (Note 1) RθJA 800 °C/W Junction-to-Ambient – t ≤ 5 s (Note 1) RθJA 570 1. Surface Mounted on FR4 Board using the minimum recommended pad size, (or 2 mm2), 1 oz Cu. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 0 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTNS3C68NZ/D NTNS3C68NZ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min 12 Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 9.6 V Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = ±10 V VGS(TH) VGS = VDS, ID = 250 mA V 11 TJ = 25°C mV/°C 1.0 mA ±10 mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Gate Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH)/TJ 0.4 1.0 1.1 RDS(on) VGS = 4.5 V, ID = 100 mA 0.120 0.160 VGS = 3.7 V, ID = 75 mA 0.130 0.175 VGS = 3.3 V, ID = 75 mA 0.135 0.185 VGS = 2.5 V, ID = 50 mA 0.167 0.230 VGS = 1.8 V, ID = 20 mA 0.250 0.440 VGS = 1.5 V, ID = 10 mA 0.44 Forward Transconductance gFS VDS = 5 V, ID = 100 mA 0.8 Source−Drain Diode Voltage VSD VGS = 0 V, IS = 100 mA 0.68 V mV/°C W S 1.1 V CHARGES & CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS 67 VGS = 0 V, f = 1 MHz, VDS = 9.6 V COSS 19 CRSS 8.5 Total Gate Charge QG(TOT) 1.8 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 4.5 V, VDS = 9.6 V, ID = 100 mA pF nC 0.1 0.3 0.4 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 10.7 VGS = 4.5 V, VDD = 9.6 V, ID = 100 mA, RG = 2 W tf ns 19.4 710 310 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTNS3C68NZ 1.20 1.12 1.04 0.96 0.88 0.80 0.72 0.64 0.56 0.48 0.40 0.32 0.24 0.16 0.08 0.00 0.0 1.2 1.1 VGS = 2.0 V to 4.5 V VGS = 1.5 V 0.7 0.6 0.5 0.4 0.4 0.6 0.8 1.0 1.2 1.4 1.8 1.6 TJ = 125°C 0.3 0.2 0.1 0 0.4 2.0 TJ = 25°C TJ = −55°C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 200 190 180 170 160 1000 TJ = 25°C ID = 5 A 150 140 130 120 110 100 90 80 1.0 2.0 3.0 4.0 5.0 6.0 7.0 TJ = 25°C 900 800 700 VGS = 1.5 V 600 500 400 VGS = 1.8 V 300 200 VGS = 2.5 V 100 0 0.1 8.0 VGS = 4.5 V 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.6 1.5 1.4 1000 VGS = 4.5 V ID = 0.075 A IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) 0.9 0.8 VGS = 1.2 V 0.2 VDS = 10 V 1.0 ID, DRAIN CURRENT (A) VGS = 1.8 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS 1.3 1.2 1.1 1.0 0.9 TJ = 125°C 100 10 1 TJ = 85°C 0.8 0.7 0.6 −50 0.1 −25 0 25 50 75 100 125 150 5 6 7 8 9 10 11 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 12 NTNS3C68NZ TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 1000 VGS = 0 V f = 1 MHz TJ = 25°C CISS 100 COSS CRSS 10 1 0 2 6 4 8 10 12 4.5 4.0 3.5 3.0 2.5 2.0 QGS 1.5 1.0 VDS = 9.6 V ID = 0.1 A TJ = 25°C 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 2.0 1 1000 td(off) IS, SOURCE CURRENT (A) VGS = 0 V tf VGS = 4.5 V VDS = 9.6 V ID = 0.1 A 100 tr td(on) 10 1 10 0.1 0.4 100 TJ = 25°C TJ = 125°C 0.5 0.6 0.7 0.8 TJ = −55°C 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 ID, DRAIN CURRENT (A) t, TIME (ns) QGD 100 ms 1 1 ms 0.1 0.01 0.001 0.01 0 V ≤ VGS ≤ 4.5 V Single Pulse TA = 25°C TJ = 150°C RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 ms dc 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 1.0 NTNS3C68NZ TYPICAL CHARACTERISTICS 1000 R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W) Duty Cycle = 0.5 0.2 100 0.1 0.05 0.02 10 0.01 Single Pulse 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 12. FET Thermal Response www.onsemi.com 5 1 10 100 1000 NTNS3C68NZ PACKAGE DIMENSIONS SOT−883 (XDFN3), 1.0x0.6, 0.35P CASE 506CB ISSUE A ÉÉÉ ÉÉÉ 0.10 C 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. EXPOSED COPPER ALLOWED AS SHOWN. A B D PIN ONE REFERENCE E DIM A A1 b D D2 e E E2 L TOP VIEW NOTE 3 0.10 C A MILLIMETERS MIN MAX 0.340 0.440 0.000 0.030 0.075 0.200 0.950 1.075 0.620 BSC 0.350 BSC 0.550 0.675 0.425 0.550 0.170 0.300 0.10 C 3X A1 SIDE VIEW C RECOMMENDED SOLDER FOOTPRINT* SEATING PLANE 1.10 D2 2X 0.43 1 0.41 0.55 E2 e/2 1 e b C A B 2X 0.10 0.05 M M C 3X 2X L 0.20 PACKAGE OUTLINE DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BOTTOM VIEW ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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