ONSEMI NTNS3164NZ

NTNS3164NZ
Small Signal MOSFET
20 V, 361 mA, Single N−Channel, SOT−883
(XDFN3) 1.0 x 0.6 x 0.4 mm Package
Features
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• Single N−Channel MOSFET
• Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for
•
•
•
Extremely Thin Environments Such as Portable Electronics
Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm Package
1.5 V Gate Drive
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V(BR)DSS
RDS(on) MAX
0.7 W @ 4.5 V
1.0 W @ 2.5 V
20 V
361 mA
2.0 W @ 1.8 V
4.0 W @ 1.5 V
Applications
•
•
•
•
ID Max
High Side Switch
High Speed Interfacing
Level Shift and Translate
Optimized for Power Management in Ultra Portable Solutions
N−CHANNEL MOSFET
D (3)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±8
V
ID
361
mA
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
260
t≤5s
TA = 25°C
427
Steady
State
TA = 25°C
PD
t≤5s
Pulsed Drain
Current
S (2)
mW
155
217
1082
mA
TJ, TSTG
−55 to
150
°C
Source Current (Body Diode) (Note 2)
IS
129
mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Operating Junction and Storage
Temperature
MARKING DIAGRAM
3
IDM
tp = 10 ms
G (1)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
or 2 mm2, 1 oz Cu.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
2
1
64 M
SOT−883 (XDFN3)
CASE 506CB
64
M
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NTNS3164NZT5G
SOT−883
(Pb−Free)
8000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 0
1
Publication Order Number:
NTNS3164NZ/D
NTNS3164NZ
THERMAL RESISTANCE RATINGS
Symbol
Max
Junction−to−Ambient – Steady State (Note 3)
Parameter
RθJA
806
Junction−to−Ambient – t ≤ 5 s (Note 3)
RθJA
575
Unit
°C/W
3. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
ID = 250 mA, ref to 25°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 20 V
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±5 V
VGS(TH)
VGS = VDS, ID = 250 mA
V
23
TJ = 25°C
mV/°C
1
mA
±10
mA
1.0
V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
0.4
1.8
RDS(on)
mV/°C
VGS = 4.5 V, ID = 200 mA
0.5
0.7
VGS = 2.5 V, ID = 100 mA
0.7
1.0
VGS = 1.8 V, ID = 50 mA
1.0
2.0
VGS= 1.5 V, ID = 10 mA
1.2
4.0
Forward Transconductance
gFS
VDS = 5 V, ID = 200 mA
1.26
Source−Drain Diode Voltage
VSD
VGS = 0 V, IS = 100 mA
0.75
W
S
1.2
V
CHARGES & CAPACITANCES
Input Capacitance
CISS
24
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
3.4
Total Gate Charge
QG(TOT)
0.8
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
VGS = 0 V, freq = 1 MHz, VDS = 10 V
VGS = 4.5 V, VDS = 10 V;
ID = 200 mA
5.0
0.1
0.2
pF
nC
0.1
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
10
VGS = 4.5 V, VDD = 10 V,
ID = 200 mA, RG = 2 W
tf
11
67
31
4. Switching characteristics are independent of operating junction temperatures
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2
ns
NTNS3164NZ
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
0.9
0.8
0.7
4.5 V
1.0
2.5 V
4.0 V
3.0 V
3.5 V
1.8 V
0.6
0.5
0.4
1.5 V
0.3
0.2
0.1
0
1.2 V
0
0.5
1.0
1.5
2.0
2.5
0.8
TJ = −55°C
0.6
0.5
0.4
0.3
0.2
0.1
0
3.0
0
0.5
1.0
1.5
2.0
2.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
3.0
5.0
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
TJ = 25°C
4.0
3.5
3.0
2.5
2.0
ID = 200 mA
1.5
1.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
4.5
TJ = 25°C
4.0
3.5
VGS = 1.5 V
3.0
2.5
VGS = 1.8 V
2.0
1.5
1.0
VGS = 2.5 V
0.5
0
VGS = 4.5 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
VGS, GATE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1000
1.8
1.7
1.6
VGS = 4.5 V
ID = 200 mA
TJ = 150°C
1.5
1.4
1.3
1.2
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
TJ = 25°C
0.7
5.0
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
TJ = 125°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
4.5
0.5
0
VDS = 5.0 V
0.9
VGS = 2.0 V
ID, DRAIN CURRENT (A)
1.0
VGS = 1.8 V
ID = 50 mA
1.1
1.0
0.9
0.8
0.7
0.6
−50
100
TJ = 125°C
10
TJ = 85°C
−25
0
25
50
75
100
125
150
1
2
4
6
8
10
12
14
16
18
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTNS3164NZ
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
30
CISS
25
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS = 0 V
f = 1 MHz
TJ = 25°C
20
15
10
COSS
5
0
CRSS
0
2
6
4
8
10
12
16
14
18
20
5
VDS
VGS
3
8
6
2
QGD
QGS
1
0
4
VDS = 10 V
ID = 0.2 A
TJ = 25°C
0
0.1
0.2
0.3
0.4
0.5
0.6
2
0.7
0
0.9
0.8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
IS, SOURCE CURRENT (A)
t, TIME (ns)
td(off)
tf
VGS = 4.5 V
VDD = 10 V
tr
td(on)
1
10
TJ = 125°C
TJ = 25°C
1
TJ = −55°C
0.1
0.01
0.001
100
0.3 0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
0.85
10
VGS ≤ 8 V
Single Pulse
TC = 25°C
ID = 250 mA
ID, DRAIN CURRENT (A)
0.80
0.75
VGS(th) (V)
10
4
100
10
12
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
35
0.70
0.65
0.60
0.55
1
10 ms
100 ms
1 ms
0.1
10 ms
0.01
RDS(on) Limit
Thermal Limit
Package Limit
0.50
0.45
−50
−25
0
25
50
75
100
125
150
0.001
0.1
1
dc
10
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Threshold Voltage
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
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4
100
NTNS3164NZ
TYPICAL CHARACTERISTICS
R(t), EFFECTIVE TRANSIENT
THERMAL RESPONSE (°C/W)
900
RqJA = 806°C/W
Steady State
800
700
600
500
400
Duty Cycle = 0.5
0.05
300
200
0.2
100
0.1
0
0.02
0.01
Single Pulse
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
t, TIME (s)
Figure 13. FET Thermal Response
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5
1E+00
1E+01
1E+02
1E+03
NTNS3164NZ
PACKAGE DIMENSIONS
SOT−883 (XDFN3), 1.0x0.6, 0.35P
CASE 506CB
ISSUE A
PIN ONE
REFERENCE
0.10 C
ÉÉÉ
0.10 C
E
DIM
A
A1
b
D
D2
e
E
E2
L
TOP VIEW
NOTE 3
0.10 C
0.10 C
3X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
A B
D
A1
SIDE VIEW
A
C
SEATING
PLANE
RECOMMENDED
SOLDER FOOTPRINT*
1.10
D2
2X
E2
e/2
1
e
0.10
M
b
C A B
0.05
M
C
2X
3X
MILLIMETERS
MIN
MAX
0.340 0.440
0.000 0.030
0.075 0.200
0.950 1.075
0.620 BSC
0.350 BSC
0.550 0.675
0.425 0.550
0.170 0.300
L
2X
0.41
0.43
1
0.55
0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTNS3164NZ/D