VISHAY 1.5KE75

1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in Unidirectional and Bidirectional
• 1500 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Case Style 1.5KE
TYPICAL APPLICATIONS
MAJOR RATINGS AND CHARACTERISTICS
V(BR) Unidirectional
6.8 V to 540 V
V(BR) Bidirectional
6.8 v to 440 V
PPPM
1500 W
PD
6.5 W
IFSM (Unidirectional only)
200 A
Tj max.
175 °C
MECHANICAL DATA
DEVICES FOR BIDIRECTION APPLICATIONS
For bidirectional types,
(e.g. 1.5KE440CA).
use
C
or
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
CA
suffix
Electrical characteristics apply in both directions.
Case: Molded epoxy body over passivated junction
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: For unidirectional types the color band
denotes cathode end, no marking on bidirectional
types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform (1) (Fig. 1)
Peak pulse current with a 10/1000 µs
waveform (1)
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5)
Peak forward surge current 8.3 ms single half sine-wave unidirectional only
Maximum instantaneous forward voltage at 100 A for unidirectional only
Operating junction and storage temperature range
Document Number 88301
20-Jun-06
(3)
(2)
SYMBOL
LIMIT
UNIT
PPPM
1500
W
IPPM
see next table
A
PD
6.5
W
IFSM
200
A
VF
3.5/5.0
V
TJ, TSTG
- 55 to + 175
°C
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1
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
(1)
NOTE:
(2) V
(3)
NON-REPETITIVE
MEASURED
ON 1.5KE220
8.3CURRENT
MS SINGLE
(A) PULSE,
& BELOW;
HALFPER
SINE-WAVE
VFFIG.
= 5.0
3 AND
VOR
FOR
DERATED
EQUIVALENT
1.5KE250(A)
ABOVE
SQUARE
& ABOVE
TA = 25
WAVE,
°C PER
DUTY
FIG.CYCLE
2
= 4 PULSES PER MINUTE MAXIMUM
F = 3.5 V FOR
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
JEDEC
TYPE
NUMBER
GENERAL
SEMICONDUCTOR
PART NUMBER
1N6267
1N6267A
1N6268
1N6268A
1N6269
1N6269A
1N6270
1N6270A
1N6271
1N6271A
1N6272
1N6272A
1N6273
1N6273A
1N6274
1N6274A
1N6275
1N6275A
1N6276
1N6276A
1N6277
1N6277A
1N6278
1N6278A
1N6279
1N6279A
1N6280
1N6280A
1N6281
1N6281A
1N6282
1N6282A
1N6283
1N6283A
1N6284
1N6284A
1N6285
1N6285A
1N6286
1N6286A
1N6287
1N6287A
1N6288
1N6288A
1N6289
1N6289A
1N6290
1N6290A
1N6291
1N6291A
1N6292
1N6292A
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2
(+)
1.5KE6.8
(+)
1.5KE6.8A
(+)
1.5KE7.5
(+)
1.5KE7.5A
(+)
1.5KE8.2
(+)
1.5KE8.2A
(+)1.5KE9.1
(+)
1.5KE9.1A
(+)1.5KE10
(+)
1.5KE10A
(+)1.5KE11
(+)1.5KE11A
(+)1.5KE12
(+)1.5KE12A
(+)1.5KE13
(+)1.5KE13A
(+)
1.5KE15
(+)1.5KE15A
(+)
1.5KE16
(+)1.5KE16A
(+)
1.5KE18
(+)1.5KE18A
(+)
1.5KE20
(+)1.5KE20A
(+)
1.5KE22
(+)1.5KE22A
(+)1.5KE24
(+)1.5KE24A
(+)1.5KE27
(+)1.5KE27A
(+)1.5KE30
(+)
1.5KE30A
(+)1.5KE33
(+)
1.5KE33A
(+)
1.5KE36
(+)
1.5KE36A
(+)1.5KE39
(+)
1.5KE39A
(+)1.5KE43
(+)1.5KE43A
(+)1.5KE47
(+)
1.5KE47A
(+)1.5KE51
(+)1.5KE51A
(+)
1.5KE56
(+)
1.5KE56A
(+)
1.5KE62
(+)
1.5KE62A
(+)
1.5KE68
(+)1.5KE68A
(+)
1.5KE75
(+)1.5KE75A
BREAKDOWN
VOLTAGE
V(BR) AT IT (1)
(V)
MIN
MAX
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
61.8
58.8
68.2
65.1
74.8
71.4
82.5
78.8
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (4) (µA)
MAXIMUM
PEAK
PULSE
CURRENT
IPPM (2) (A)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
MAXIMUM
TEMP.
COEFFICIENT
OF V(BR)
(%/°C)
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
1000
1000
500
500
200
200
50
50
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
139
143
128
133
120
124
109
112
100
103
92.6
96.2
86.7
89.8
78.9
82.4
68.2
70.8
63.8
66.7
56.6
59.5
51.5
54.2
47.0
49.0
43.2
45.2
38.4
40.0
34.5
36.2
31.4
32.8
28.8
30.1
26.6
27.8
24.2
25.3
22.1
23.1
20.4
21.4
18.6
19.5
16.9
17.6
15.3
16.3
13.9
14.6
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
109
104
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.089
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
0.104
0.104
0.105
0.105
Document Number 88301
20-Jun-06
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
JEDEC
TYPE
NUMBER
1N6293
1N6293A
1N6294
1N6294A
1N6295
1N6295A
1N6296
1N6296A
1N6297
1N6297A
1N6298
1N6298A
1N6299
1N6299A
1N6300
1N6300A
1N6301
1N6301A
1N6302
1N6302A
1N6303
1N6303A
GENERAL
SEMICONDUCTOR
PART NUMBER
(+)
1.5KE82
(+)1.5KE82A
(+)
1.5KE91
(+)1.5KE91A
(+)
1.5KE100
(+)
1.5KE100A
(+)1.5KE110
(+)
1.5KE 110A
(+)1.5KE120
(+)
1.5KE120A
(+)1.5KE130
(+)
1.5KE130A
(+)1.5KE150
(+)
1.5KE150A
(+)1.5KE160
(+)
1.5KE160A
(+)1.5KE170
(+)
1.5KE170A
1.5KE180
1.5KE180A
1.5KE200
1.5KE200A*
1.5KE220
1.5KE220A*
1.5KE250
1.5KE250A
1.5KE300
1.5KE300A
1.5KE350
1.5KE350A
1.5KE400
1.5KE400A
1.5KE440
1.5KE440A
1.5KE480
1.5KE480A
1.5KE510
1.5KE510A
1.5KE540
1.5KE540A
BREAKDOWN
VOLTAGE
V(BR) AT IT (1)
(V)
MIN
MAX
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
136
143
144
152
153
162
162
171
180
190
198
209
225
237
270
285
315
333
360
380
396
418
432
456
459
485
486
513
90.2
86.1
100.0
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
330
315
385
368
440
420
484
462
528
504
561
535
594
567
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (4) (µA)
MAXIMUM
PEAK
PULSE
CURRENT
IPPM (2) (A)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
MAXIMUM
TEMP.
COEFFICIENT
OF V(BR)
(%/°C)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
389
408
413
434
437
459
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
12.7
13.3
11.5
12.0
10.4
10.9
9.5
9.9
8.7
9.1
8.0
8.4
7.0
7.2
6.5
6.8
6.1
6.4
5.8
6.1
5.2
5.5
4.4
4.6
4.2
4.4
3.5
3.6
3.0
3.1
2.6
2.7
2.4
2.5
2.19
2.28
2.06
2.15
1.94
2.03
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
631
602
686
658
729
698
772
740
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.106
0.106
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Note:
(1) Pulse test: tp ≤ 50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE CA62.35
(4) For bidirectional types with VR 10 volts and less the ID limit is doubled
* Bidirectional versions are UL approved under component across the line protection, ULV1414 file number E108274 (1.5KE200CA,
1.5KE220CA)
(+)
Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Document Number 88301
20-Jun-06
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3
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.5KE6.8A-E3/54
0.968
54
1400
13" Diameter Paper Tape & Reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
150
IPPM - Peak Pulse Current, % IRSM
PPPM - Peak Pulse Power (kW)
100
10
1
Peak Value
IPPM
100
Half Value — IPP
2
IPPM
50
10/1000 µsec. Waveform
as defined by R.E.A.
td
0
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
1.0
0
3.0
2.0
td - Pulse Width (sec.)
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
4.0
10000
100
Unidirectional
Bidirectional
75
CJ, Capacitance, pF
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
0.1
0.1 µs
TJ = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
tr = 10 µsec.
50
25
VR = 0
1000
VR = Rated
Stand-off Voltage
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0
0
25
50
75
100
125
150
175
200
5
10
100
500
TJ - Initial Temperature (°C)
V(BR), Breakdown Voltage (V)
Figure 2. Pulse Power or Current versus Initial
Junction Temperature
Figure 4. Typical Junction Capacitance
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4
Document Number 88301
20-Jun-06
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
8.0
ΔVC , Incremental Clamping Voltage
100
PD, Power Dissipation (W)
7.0
6.0
5.0
4.0
3.0
L = 0.375" (9.5 mm)
Lead Lengths
2.0
1.0
Waveform:
10/1000 µs Impulse
ΔVC = VC - V(BR)
20
1.5KE75
10
1.5KE39
2.0
1.5KE33
1.5KE6.8
1.5KE9.1
1.0
0.2
0.1
0
0
25
50
75
100
125
150
175
1
0.5
200
200
TJ = TJ max.
8.3 ms Single Half Sine-Wave
100
100
Δ VC, Incremental Clamping Voltage
Peak Forward Surge Current (A)
50
Figure 8. Incremental Clamping Voltage Curve (Unidirectional)
Figure 5. Power Derating Curve
10
Waveform:
10/1000 µs Impulse
ΔVC = VC - V(BR)
100
1.5KE200C
20
10
1.5KE75C
1.5KE39C
1.5KE30C
1.5KE15C
11C
1.5KE7.5C
2.0
1.0
0.2
0.1
0.5
10
1
10
2
IPP, Peak Pulse Current (A)
TL - Lead Temperature (°C)
1
2
10
20
50
IPP, Peak Pulse Current (A)
Number of Cycles at 60 Hz
Figure 6. Maximum Non-repetitive Forward Surge Current
Uni-Directional only
Figure 9. Incremental Clamping Voltage Curve (Bidirectional)
100
Waveform:
8/20 µs Impulse
Δ VC = VC - V(BR)
1.5KE200
1.5KE130
20
1.5KE100
10
1.5KE75
2.0
1.5KE39
1.5KE33
1.5KE6.8
1.5KE9.1
1.5KE18
1.5KE12
1.0
0.2
Δ VC, Incremental Clamping Voltage
100
Δ VC, Incremental Clamping Voltage
1.5KE200
1.5KE130
20
Waveform:
8/20 µs Impulse
Δ VC = VC - V(BR)
1.5KE200C
1.5KE75C
10
1.5KE39C
1.5KE30C
1.5KE15C
2
1.5KE11C
1
1.5KE7.5C
0.2
0.1
0.1
0.5
1
2
10
20
50
0.5
1
2.0
10
20
50
IPP, Peak Pulse Current (A)
IPP, Peak Pulse Current (A)
Figure 7. Incremental Clamping Voltage Curve (Unidirectional)
Figure 10. Incremental Clamping Voltage Curve (Bidirectional)
Document Number 88301
20-Jun-06
www.vishay.com
5
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
1000
Reverse Leakage Current (µA)
Instantaneous Forward Current (A)
100
10
1
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.1
0
0.4
0.8
1.2
1.6
2.0
Instantaneous Forward Voltage (V)
100
10
1.0
0.1
0.01
0
100
200
300
400
500
600
Breakdown Voltage (V)
Figure 11. Instantaneous Forward Voltage Characteristics Curve
Figure 13. Typical Reverse Leakage Characteristics
Transient Thermal Impedance (°C/W)
100
10
1
0.1
0.001
0.01
0.1
1
10
100
1000
tp - Pulse Duration (sec.)
Figure 12. Typical Transient Thermal Impedance
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Document Number 88301
20-Jun-06
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style 1.5KE
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
APPLICATION NOTES
• This series of Silicon Transient Suppressors is used
in applications where large voltage transients can
permanently damage voltage-sensitive components.
• The TVS diode can be used in applications where
induced lightning on rural or remote transmission
lines presents a hazard to electronic circuitry (ref:
R.E.A. specification P.E. 60).
Document Number 88301
20-Jun-06
• This Transient Voltage Suppressor diode has a pulse
power rating of 1500 watts for one millisecond. The
response time of TVS diode clamping action
is effectively instantaneous (1 x 10-9 seconds
bidirectional); therefore, they can protect integrated
circuits, MOS devices, hybrids, and other voltage
sensitive semiconductors and components. TVS
diodes can also be used in series or parallel to
increase the peak power ratings.
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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