BFP181T / BFP181TW / BFP181TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • SOT-143 Low noise figure High power gain e3 Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 4 2 1 SOT-343 Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. 3 4 1 2 SOT-343R Mechanical Data Typ:BFP181T Case: SOT-143 Plastic case Weight: approx. 8.0 mg Marking: 18 Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Typ: BFP181TW Case: SOT-343 Plastic case Weight: approx. 6.0 mg Marking: W18 Pinning: 1 = Collector, 2 = Emitter, 4 3 18383 Electrostatic sensitive device. Observe precautions for handling. 3 = Base, 4 = Emitter Typ: BFP181TRW Case: SOT-343R Plastic case Weight: approx. 6.0 mg Marking: WSF Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Unit Collector-base voltage Parameter Test condition VCBO 15 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 2 V IC 20 mA Ptot 160 mW Collector current Total power dissipation Tamb ≤ 78 °C Junction temperature Storage temperature range Tj 150 °C Tstg - 65 to + 150 °C Symbol Value Unit RthJA 450 K/W Maximum Thermal Resistance Parameter Junction ambient 1) Test condition 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu Document Number 85012 Rev. 1.4, 02-Mar-05 www.vishay.com 1 BFP181T / BFP181TW / BFP181TRW Vishay Semiconductors Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Max Unit Collector-emitter cut-off current Parameter VCE = 15 V, VBE = 0 Test condition ICES 100 µA Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO 1 µA Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO Collector-emitter saturation voltage IC = 15 mA, IB =1.5 mA DC forward current transfer ratio VCE = 6 V, IC = 5 mA VCE = 6 V, IC = 10 mA www.vishay.com 2 Symbol Min 10 VCEsat hFE hFE Typ. 50 V 0.1 0.4 100 150 V 100 Document Number 85012 Rev. 1.4, 02-Mar-05 BFP181T / BFP181TW / BFP181TRW Vishay Semiconductors Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit VCE = 3 V, IC = 6 mA, f = 500 MHz fT 6.8 GHz VCE = 8 V, IC = 10 mA, f = 500 MHz fT 8.0 GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 0.3 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce 0.2 pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.45 pF Noise figure VCE = 5 V, IC = 3 mA, ZS = ZSopt, f = 900 MHz F 1.5 dB VCE = 5 V, IC = 3 mA, ZS = ZSopt, f = 1.75 GHz F 2.2 dB VCE = 8 V, IC = 8 mA, ZS = 50 Ω, ZL = ZLopt, f = 900 MHz Gpe 16.5 dB VCE = 8 V, IC = 8 mA, ZS = 50 Ω, ZL = ZLopt, f = 1.75 GHz Gpe 13.5 dB VCE = 8 V, IC = 8 mA, Z0 = 50 Ω, f = 900 MHz |S21e|2 16 dB Transition frequency Power gain Transducer gain Package Dimensions in mm 0.50(0.020) 0.35 (0.014) 0.15 (0.006) 0.08 (0.003) 1.1 (0.043) 0.9 (0.035) 1.4 (0.055) 1.2 (0.047) 2.6 (0.101) 2.4 (0.094) 0.9 (0.035) 0.75 (0.029) 3.0 (0.117) 2.8 (0.109) 0...0.1 (0...0.004) Mounting Pad Layout 1.8 (0.070) 1.6 (0.062) 0.65 (0.025) 1.17 (0.046) 2.0 (0.078) 1.8 (0.070) Document Number 85012 Rev. 1.4, 02-Mar-05 ISO Method E 96 12240 www.vishay.com 3 BFP181T / BFP181TW / BFP181TRW Vishay Semiconductors Package Dimensions in mm 96 12237 Package Dimensions in mm 96 12238 www.vishay.com 4 Document Number 85012 Rev. 1.4, 02-Mar-05 BFP181T / BFP181TW / BFP181TRW Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85012 Rev. 1.4, 02-Mar-05 www.vishay.com 5