Not for new design, this product will be obsoleted soon TSDF1220 / 1220R / 1220W / 1220RW Vishay Semiconductors 12 GHz Silicon NPN Planar RF Transistor 2 1 SOT143 Features • • • • • Low power applications Very low noise figure e3 High transition frequency fT = 12 GHz Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 4 1 2 SOT143R 4 3 2 1 SOT343 Applications For low noise applications such as preamplifiers, mixers and oscillators in analog and digital TV-systems (e.g., satellite tuners) up to microwave frequencies. 3 1 4 2 SOT343R Mechanical Data 4 Typ:TSDF1220 Case: SOT143 Plastic case Weight: approx. 8.0 mg 3 Electrostatic sensitive device. Observe precautions for handling. Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Typ: TSDF1220R Case: SOT143R Plastic case Weight: approx. 8.0 mg Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter 13629 Typ: TSDF1220W Case: SOT343 Plastic case Weight: approx. 6.0 mg Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Typ: TSDF1220RW Case: SOT343R Plastic case Weight: approx. 6.0 mg Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Parts Table Part Ordering Code Type Marking Remarks TSDF1220 TSDF1220-GS08 F20 Tape and Reel TSDF1220R TSDF1220R-GS08 20F Tape and Reel TSDF1220RW TSDF1220RW-GS08 W2F Tape and Reel TSDF1220W TSDF1220W-GS08 WF2 Tape and Reel Document Number 85066 Rev. 1.8, 08-Sep-08 www.vishay.com 1 TSDF1220 / 1220R / 1220W / 1220RW Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Unit Collector-base voltage Parameter Test condition VCBO 9 V Collector-emitter voltage VCEO 6 V Emitter-base voltage VEBO 2 V Collector current Total power dissipation IC 40 mA Ptot 200 mW Tj 150 °C Tstg - 65 to + 150 °C Symbol Value Unit RthJA 450 K/W Tamb ≤ 60 °C Junction temperature Storage temperature range Maximum Thermal Resistance Parameter Junction to ambient air 1) Test condition 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Max Unit VCE = 12 V, VBE = 0 ICES 100 μA Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO 2 μA Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO Collector-emitter saturation voltage IC = 30 mA, IB = 3 mA Collector-emitter cut-off current Test condition DC forward current transfer ratio VCE = 5 V, IC = 20 mA Symbol Min Typ. 6 VCEsat V 0.1 0.5 hFE 50 100 150 Min Typ. Max V Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified Test condition Symbol Transition frequency Parameter VCE = 5 V, IC = 20 mA, f = 1 GHz fT Collector-base capacitance VCB = 1 V, f = 1 MHz Collector-emitter capacitance VCE = 1 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure VCE = 5 V, IC = 3 mA, ZS = ZSopt, ZL = 50 Ω, f = 2 GHz Power gain VCE = 5 V, IC = 20 mA, ZS = ZSopt, ZL = 50 Ω, f = 2 GHz Transducer gain VCE = 5 V, IC = 20 mA, Z0 = 50 Ω, f = 2 GHz Third order intercept point at output VCE = 5 V, IC = 20 mA, f = 2 GHz www.vishay.com 2 Unit 12 GHz Ccb 0.3 pF Cce 0.35 pF Ceb 0.5 pF F 1.2 dB Gpe 14 dB |S21e|2 12.5 dB IP3 22 dBm Document Number 85066 Rev. 1.8, 08-Sep-08 TSDF1220 / 1220R / 1220W / 1220RW Vishay Semiconductors Typical Characteristics Tamb = 25 °C unless otherwise specified 250 200 150 100 50 0 0 20 40 60 0.3 0.2 0.1 0.0 0 1 2 3 4 5 V CB – Collector Base Voltage (V) 14289 Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 3. Collector Base Capacitance vs. Collector Base Voltage 3.0 20 V CE = 5 V f =1 GHz 16 12 F – Noise Figure (dB) f T - Transition Frequency (GHz) 0.4 80 100 120 140 160 Tamb - Ambient Temperature (°C) 96 12159 V CE = 3 V f = 1 GHz 8 4 V CE = 5 V f = 2 GHz ZS = 50 Ω 2.5 2.0 1.5 1.0 0.5 0.0 0 0 14288 0.5 Ccb - Collector Base Capacitance (pF) Ptot - Total Power Dissipation (mW) 300 5 10 15 20 25 I C - Collector Current (mA) Figure 2. Transition Frequency vs. Collector Current Document Number 85066 Rev. 1.8, 08-Sep-08 0 30 14290 5 10 15 20 25 I C – Collector Current (mA) Figure 4. Noise Figure vs. Collector Current www.vishay.com 3 TSDF1220 / 1220R / 1220W / 1220RW Vishay Semiconductors 0.5 [0.020] 0.35 [0.014] 0.5 [0.020] 0.35 [0.014] 0.9 [0.035] 1.1 [0.043] 0.08 [0.003] 0.15 [0.006] 3 [0.118] 2.8 [0.110] 0.1 [0.004] max. Package Dimensions in mm (Inches): SOT143 2.6 [0.102] 2.35 [0.093] 1.8 [0.071] 1.6 [0.063] 0.5 [0.020] 0.35 [0.014] 0.9 [0.035] 0.75 [0.030] foot print recommendation: 96 12240 1.2 [0.047] 0.8 [0.031] 0.8 [0.031] 2 [0.079] 2 [0.079] 1.8 [0.071] 0.9 [0.035] 0.9 [0.035] 1.2 [0.047] 1.4 [0.055] 1.7 [0.067] 0.8 [0.031] 1.9 [0.075] Package Dimensions in mm (Inches): SOT143R 96 12239 www.vishay.com 4 Document Number 85066 Rev. 1.8, 08-Sep-08 TSDF1220 / 1220R / 1220W / 1220RW Vishay Semiconductors 0.4 [0.016] 0.25 [0.010] 0.4 [0.016] 0.25 [0.010] 1 [0.039] 0.8 [0.031] 0.2 [0.008] 0.1 [0.004] 2.2 [0.087] 1.8 [0.071] 0.1 [0.004] max. Package Dimensions in mm (Inches): SOT343 0.15 [0.006] min. 2.2 [0.087] 2 [0.079] 1.25 [0.049] 1.05 [0.041] 0.4 [0.016] 0.25 [0.010] 0.7 [0.028] 0.55 [0.022] foot print recommendation: 1.15 [0.045] 0.09 [0.035] 96 12237 0.8 [0.031] 1.4 [0.055] 1.2 [0.047] 1.6 [0.063] 1.35 [0.053] 1.15 [0.045] 0.6 [0.024] 1.3 [0.051] Package Dimensions in mm (Inches): SOT343R 96 12238 Document Number 85066 Rev. 1.8, 08-Sep-08 www.vishay.com 5 TSDF1220 / 1220R / 1220W / 1220RW Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 Document Number 85066 Rev. 1.8, 08-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1