BFR92A / BFR92AR / BFR92AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • • High power gain Low noise figure e3 High transition frequency Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 1 SOT-23 3 Applications 2 1 Wide band amplifier up to GHz range. SOT-323 Mechanical Data Typ: BFR92A Case: SOT-23 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter Typ: BFR92AR 2 3 19150 Electrostatic sensitive device. Observe precautions for handling. Case: SOT-23 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter Typ: BFR92AW Case: SOT-323 Plastic case Weight: approx. 6.0 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter Parts Table Part Ordering code Marking Remarks Package BFR92A BFR92AGELB-GS08 +P2 Tape and Reel SOT-23 BFR92AR BFR92ARGELB-GS08 +P5 Tape and Reel SOT-23 BFR92AW BFR92AW-GS08 WP2 Tape and Reel SOT-323 Document Number 85033 Rev. 1.4, 29-Apr-05 www.vishay.com 1 BFR92A / BFR92AR / BFR92AW Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Unit Collector-base voltage Parameter Test condition VCBO 20 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 2 V Collector current Total power dissipation IC 30 mA Ptot 200 mW Tj 150 °C Tstg - 65 to + 150 °C Symbol Value Unit RthJA 450 K/W Tamb ≤ 60 °C Junction temperature Storage temperature range Maximum Thermal Resistance Parameter Junction ambient 1) Test condition 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Max Unit VCE = 20 V, VBE = 0 ICES 100 μA Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 2 V, IC = 0 IEBO 10 μA Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 hFE 65 100 150 Symbol Min Typ. Max Collector-emitter cut-off current Test condition DC forward current transfer ratio VCE = 10 V, IC = 14 mA Symbol Min Typ. V Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Transition frequency VCE = 10 V, IC = 14 mA, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Noise figure Unit 6 GHz Ccb 0.3 pF Cce 0.15 pF VEB = 0.5 V, f = 1 MHz Ceb 0.65 pF VCE = 10 V, IC = 2 mA, ZS = 50 Ω, f = 800 MHz F 1.8 dB Power gain VCE = 10 V, ZS = 50 Ω, ZL = ZLopt, IC = 14 mA, f = 800 MHz Gpe 16 dB Linear output voltage - two tone intermodulation test VCE = 10 V, IC = 14 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω V1 = V2 120 mV Third order intercept point VCE = 10 V, IC = 14 mA, f = 800 MHz IP3 24 dBm www.vishay.com 2 fT Document Number 85033 Rev. 1.4, 29-Apr-05 BFR92A / BFR92AR / BFR92AW Vishay Semiconductors Common Emitter S-Parameters VCE/V IC/mA f/MHz IC/mA f/MHz LIN MAG ANG LIN MAG ANG LIN MAG ANG LIN MAG 100 0.902 -17.5 6.38 164.6 0.025 79.9 0.978 -7.6 300 0.761 -50.2 5.51 137.8 0.064 63.1 0.859 -19.3 500 0.577 -76.8 4.48 117.8 0.086 53.7 0.736 -24.2 800 0.399 -105.3 3.28 98.9 0.104 49.7 0.642 -25.3 1000 0.339 -121.9 2.79 90.0 0.114 50.3 0.618 -26.0 1200 0.303 -138.1 2.45 82.1 0.124 51.1 0.603 -28.0 1500 0.284 -163.3 2.07 71.4 0.140 53.1 0.577 -31.2 1800 0.272 172.9 1.79 62.5 0.157 55.5 0.560 -33.9 2000 0.278 159.4 1.65 57.3 0.171 56.6 0.558 -36.0 100 0.783 -27.2 12.84 155.8 0.023 76.3 0.934 -12.7 300 0.534 -69.6 9.12 122.8 0.052 61.9 0.711 -25.1 500 0.351 -97.6 6.41 104.8 0.068 59.5 0.580 -25.6 800 0.220 -128.3 4.28 89.8 0.091 61.1 0.518 -22.1 1000 0.188 -145.2 3.53 82.9 0.107 62.5 0.515 -22.2 1200 0.175 -162.0 3.04 76.5 0.124 62.8 0.510 -24.1 1500 0.189 175.1 2.51 67.8 0.149 63.0 0.494 -27.3 1800 0.200 153.5 2.16 60.2 0.175 62.4 0.483 -30.0 2000 0.214 140.6 1.98 55.8 0.194 61.6 0.481 -32.6 100 0.641 -38.1 19.40 146.3 0.020 73.2 0.869 -17.6 300 0.362 -85.8 11.09 112.0 0.043 65.2 0.597 -26.0 500 0.229 -116.7 7.27 97.3 0.062 66.3 0.496 -22.9 -18.1 2 5 5 10 14 5 Document Number 85033 Rev. 1.4, 29-Apr-05 S11 S21 S12 S22 ANG 800 0.148 -151.6 4.69 84.9 0.089 68.1 0.465 1000 0.136 -168.5 3.83 79.0 0.108 68.1 0.473 -18.4 1200 0.133 176.8 3.27 73.4 0.127 67.8 0.473 -20.6 1500 0.160 158.3 2.70 65.7 0.156 66.5 0.461 -24.6 1800 0.183 139.4 2.30 58.9 0.184 64.8 0.452 -27.4 2000 0.198 130.4 2.12 54.8 0.203 63.5 0.450 -30.1 100 0.566 -44.3 22.20 141.5 0.019 72.7 0.832 -19.4 300 0.301 -94.2 11.58 108.1 0.041 67.5 0.560 -25.1 500 0.195 -127.0 7.43 94.6 0.060 69.0 0.475 -20.9 -16.5 800 0.137 -164.6 4.78 83.2 0.089 70.1 0.456 1000 0.129 -179.9 3.88 77.6 0.109 69.9 0.466 -17.1 1200 0.132 167.7 3.30 72.3 0.128 69.1 0.469 -19.4 1500 0.162 153.1 2.72 64.9 0.157 67.5 0.456 -23.4 1800 0.183 136.6 2.32 58.1 0.185 65.6 0.448 -26.3 2000 0.204 127.4 2.13 54.1 0.205 64.1 0.446 -29.2 www.vishay.com 3 BFR92A / BFR92AR / BFR92AW Vishay Semiconductors VCE/V IC/mA f/MHz IC/mA f/MHz LIN MAG 100 300 20 2 10 5 10 10 www.vishay.com 4 14 S11 S21 S12 S22 ANG LIN MAG ANG LIN MAG ANG LIN MAG ANG 0.484 -52.5 24.55 136.0 0.018 72.0 0.788 -20.7 0.251 -106.2 11.67 104.3 0.039 69.5 0.531 -22.8 500 0.181 -141.8 7.37 92.1 0.058 71.5 0.466 -18.3 800 0.144 -177.4 4.70 81.3 0.088 72.0 0.456 -14.4 1000 0.138 169.3 3.82 76.0 0.108 71.4 0.469 -15.3 1200 0.145 159.1 3.26 70.9 0.127 70.6 0.472 -18.1 1500 0.179 148.3 2.67 63.7 0.157 68.4 0.461 -22.4 1800 0.202 133.7 2.28 57.0 0.185 66.4 0.453 -25.4 2000 0.220 125.9 2.10 52.8 0.205 64.8 0.452 -28.4 100 0.915 -16.2 6.32 165.5 0.020 80.5 0.981 -6.2 300 0.780 -46.7 5.56 139.6 0.054 65.1 0.883 -16.1 500 0.597 -71.2 4.57 119.9 0.073 55.8 0.778 -20.4 800 0.405 -97.6 3.37 101.0 0.089 52.2 0.692 -21.6 1000 0.339 -113.1 2.87 92.3 0.098 53.0 0.677 -22.4 1200 0.294 -129.6 2.53 84.2 0.107 54.3 0.663 -24.0 1500 0.261 -155.8 2.13 73.7 0.121 56.8 0.643 -27.0 1800 0.240 179.2 1.84 64.8 0.136 59.2 0.630 -29.6 2000 0.243 163.2 1.70 59.8 0.149 61.1 0.630 -31.4 100 0.816 -24.3 12.50 157.4 0.019 77.2 0.947 -10.3 300 0.569 -62.7 9.15 125.3 0.044 63.6 0.761 -20.5 500 0.372 -87.9 6.55 106.9 0.059 60.6 0.647 -21.1 800 0.220 -114.2 4.41 91.6 0.079 62.3 0.592 -18.8 1000 0.175 -129.6 3.63 84.6 0.093 63.9 0.590 -19.1 1200 0.153 -145.8 3.13 78.3 0.107 64.8 0.589 -20.8 1500 0.153 -175.7 2.59 69.7 0.129 65.5 0.576 -24.1 1800 0.157 158.0 2.22 62.1 0.152 65.5 0.567 -26.6 2000 0.170 143.4 2.04 57.9 0.168 65.3 0.567 -28.7 100 0.696 -33.7 18.83 148.4 0.017 74.6 0.896 -13.8 300 0.397 -75.7 11.20 114.4 0.038 66.4 0.666 -20.8 500 0.237 -101.2 7.41 99.0 0.054 67.0 0.577 -18.6 800 0.132 -130.2 4.81 86.4 0.078 68.9 0.553 -15.5 1000 0.103 -149.3 3.92 80.4 0.094 69.4 0.560 -16.0 1200 0.097 -165.8 3.35 75.0 0.111 69.5 0.561 -18.2 1500 0.116 167.2 2.76 67.5 0.136 69.0 0.551 -21.9 1800 0.133 141.3 2.36 60.4 0.160 67.9 0.545 -24.4 2000 0.148 129.4 2.16 56.4 0.178 66.8 0.549 -27.1 100 0.639 -38.8 21.41 143.8 0.016 73.2 0.866 -15.2 300 0.339 -82.4 11.61 110.2 0.036 67.5 0.636 -19.8 500 0.199 -110.0 7.52 96.3 0.053 69.4 0.562 -16.9 800 0.113 -144.1 4.83 84.4 0.077 70.7 0.549 -14.2 1000 0.093 160.9 3.93 78.9 0.094 71.1 0.556 -14.9 Document Number 85033 Rev. 1.4, 29-Apr-05 BFR92A / BFR92AR / BFR92AW Vishay Semiconductors VCE/V IC/mA f/MHz IC/mA f/MHz LIN MAG ANG LIN MAG ANG LIN MAG ANG LIN MAG ANG 1200 0.090 179.0 3.36 73.7 0.110 70.5 0.560 -17.3 1500 0.118 158.6 2.76 66.4 0.136 69.8 0.550 -21.0 1800 0.137 137.7 2.35 59.5 0.161 68.4 0.546 -24.0 2000 0.155 125.7 2.16 55.6 0.178 67.4 0.548 -26.5 100 0.576 -45.8 23.38 138.5 0.015 72.0 0.836 -15.8 300 0.286 -91.7 11.55 106.1 0.034 69.0 0.620 -17.7 500 0.177 -123.1 7.34 93.4 0.051 71.3 0.565 -14.7 -12.6 20 S11 S21 S12 S22 800 0.113 -161.1 4.69 82.2 0.075 72.4 0.557 1000 0.101 -177.3 3.81 77.1 0.092 72.4 0.568 -13.8 1200 0.107 168.1 3.24 72.0 0.109 71.9 0.571 -16.4 1500 0.136 152.5 2.67 64.8 0.134 70.9 0.564 -20.4 1800 0.160 133.1 2.27 58.1 0.159 69.5 0.559 -23.5 2000 0.181 124.2 2.09 54.0 0.176 68.4 0.560 -25.9 Ccb - Collector Base Capacitance ( pF ) Typical Characteristics (Tamb = 25 °C unless otherwise specified) Ptot -Total Power Dissipation ( mW ) 300 250 200 150 100 50 0 0 20 40 60 80 0.6 0.4 0.2 f = 1 MHz 0 0 5000 3.0 2000 V CE = 10V f = 500 MHz 1000 F - Noise Figure ( dB ) 3.5 3000 12 16 20 2.5 2.0 1.5 1.0 V CE = 10 V f = 800 MHz Z S = 50 0.5 0 0 0 12889 8 Figure 3. Collector Base Capacitance vs. Collector Base Voltage 6000 4000 4 V CB - Collector Base Voltage ( V ) 13585 Figure 1. Total Power Dissipation vs. Ambient Temperature f T - Transition Frequency ( MHz ) 0.8 100 120 140 160 Tamb - Ambient Temperature ( °C ) 96 12159 1.0 5 10 15 20 25 30 I C - Collector Current ( mA ) Figure 2. Transition Frequency vs. Collector Current Document Number 85033 Rev. 1.4, 29-Apr-05 0 12891 5 10 15 20 25 30 I C - Collector Current ( mA ) Figure 4. Noise Figure vs. Collector Current www.vishay.com 5 BFR92A / BFR92AR / BFR92AW Vishay Semiconductors VCE = 10 V, IC = 10 mA, Z0 = 50 Ω S12 S11 90° j 120° j2 j0.5 60° 2.0 GHz 1.5 150° j5 j0.2 30° 1.0 0.5 2.0 GHz 0 0.2 0.5 0.8 1 2 ∞ 5 0.3 -j0.2 180° 0° 0.16 -30° -150° -j2 -j0.5 0.08 -j5 0.1 13 526 0.1 -60° -120° 13 527 -j -90° Figure 7. Reverse Transmission Coefficient Figure 5. Input Reflection Coefficient S22 S21 j 90° 120° 0.1 60° j2 j0.5 0.3 30° 150° j5 j0.2 0.5 1.0 2.0 GHz 180° 8 16 0° 0 0.2 0.5 1 0.1 -j5 -j2 -j0.5 -60° -120° -90° Figure 6. Forward Transmission Coefficient 6 ∞ 5 -30° -150° www.vishay.com 0.8 2.0 GHz -j0.2 13 528 2 13 529 -j Figure 8. Document Number 85033 Rev. 1.4, 29-Apr-05 BFR92A / BFR92AR / BFR92AW Vishay Semiconductors 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.95 (.037) 1.15 (.045) Package Dimensions in mm (Inches) 2.6 (.102) 2.35 (.092) 0.4 (.016) ISO Method E 3.1 (.122) Mounting Pad Layout 2.8 (.110) 0.52 (0.020) 0.4 (.016) C B 1.20(.047) 1.43 (.056) 0.9 (0.035) 2.0 (0.079) E 0.95 (.037) 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 9511346 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.95 (.037) 1.15 (.045) Package Dimensions in mm (Inches) 2.6 (.102) 2.35 (.092) 0.4 (.016) ISO Method E 3.1 (.122) Mounting Pad Layout 2.8 (.110) 0.52 (0.020) 0.4 (.016) C E 0.95 (.037) 1.20(.047) 1.43 (.056) 0.9 (0.035) 2.0 (0.079) B 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 9511347 Document Number 85033 Rev. 1.4, 29-Apr-05 www.vishay.com 7 BFR92A / BFR92AR / BFR92AW Vishay Semiconductors Package Dimensions in mm (Inches) 0.10 (0.004) 1.00 (0.039) 0.10 (0.004) SO Method E 10 Mounting Pad Layout 2.05 (0.080) 0.39 (0.015) 1.3 (0.051) 8 2.0 (0.079) 0.95 (0.37) 0.30 (0.012) www.vishay.com 2.00 (0.078) 1.25 (0.049) 0.9 (0.035) 0.95 (0.037) 96 12236 Document Number 85033 Rev. 1.4, 29-Apr-05 BFR92A / BFR92AR / BFR92AW Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85033 Rev. 1.4, 29-Apr-05 www.vishay.com 9 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1