NTMFS5C604NL D

NTMFS5C604NL
Power MOSFET
60 V, 1.2 mW, 287 A, Single N−Channel
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(ON) MAX
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
ID
287
A
Parameter
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
Steady
State
PD
ID
A
40
S (1,2,3)
28
3.9
IDM
900
A
TJ, Tstg
−55 to
+175
°C
IS
203
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 22 A)
EAS
776
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
TA = 100°C
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
D (5)
G (4)
PD
Pulsed Drain Current
287 A
1.7 mW @ 4.5 V
W
200
100
TA = 100°C
TA = 25°C
1.2 mW @ 10 V
60 V
203
TC = 100°C
TA = 25°C
ID MAX
W
N−CHANNEL MOSFET
1.9
°C
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING
DIAGRAM
D
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5C604L
A
Y
W
ZZ
S
S
S
G
D
5C604L
AYWZZ
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
0.75
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
January, 2016 − Rev. 3
1
Publication Order Number:
NTMFS5C604NL/D
NTMFS5C604NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
22.9
VGS = 0 V,
VDS = 60 V
mV/°C
TJ = 25°C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
100
nA
2.0
V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
−5.9
mV/°C
VGS = 10 V
ID = 50 A
0.93
1.2
VGS = 4.5 V
ID = 50 A
1.25
1.7
gFS
VDS = 15 V, ID = 50 A
180
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
8900
VGS = 0 V, f = 1 MHz, VDS = 25 V
CRSS
3750
pF
40
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 30 V; ID = 50 A
52
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 30 V; ID = 50 A
120
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
6.4
nC
21.4
VGS = 4.5 V, VDS = 30 V; ID = 50 A
Gate−to−Drain Charge
QGD
12.7
Plateau Voltage
VGP
2.8
td(ON)
21.8
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 30 V,
ID = 50 A, RG = 2.5 W
tf
79.1
ns
57.8
81.3
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.78
TJ = 125°C
0.64
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 50 A
1.2
V
98
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
45
ns
53
190
nC
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTMFS5C604NL
TYPICAL CHARACTERISTICS
200
200
10 V to 3.4 V
180
3.2 V
160
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
180
140
3.0 V
120
100
80
VGS = 2.8 V
60
40
140
120
100
TJ = 25°C
80
60
40
20
0
TJ = 125°C
20
0
0
0.5
1.0
1.5
1.0
1.5
2.0
2.5
3.0
3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 50 A
3
2
1
0
3
4
5
6
7
8
9
10
VGS, GATE VOLTAGE (V)
4.0
2.0
TJ = 25°C
1.5
VGS = 4.5 V
VGS = 10 V
1.0
0.5
10
30
50
70
90
110
130
150
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.2
100
2.0
VGS = 10 V
ID = 40 A
1.8
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
4
2
TJ = −55°C
0
2.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
VDS ≤ 10 V
160
1.6
1.4
1.2
1.0
TJ = 125°C
10
TJ = 85°C
1
0.8
0.6
−50 −25
0.1
0
25
50
75
100
125
150
175
5
15
25
35
45
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
55
NTMFS5C604NL
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
100K
CISS
10K
COSS
1000
VGS = 0 V
TJ = 25°C
f = 1 MHz
CRSS
100
10
1
0
10
20
30
40
50
30
QT
25
8
20
6
15
4
QGD
QGS
10
VDS = 30 V
TJ = 25°C
ID = 50 A
2
5
0
60
0
0
20
40
60
80
100
120
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
1000
td(off)
100
IS, SOURCE CURRENT (A)
t, TIME (ns)
tf
tr
td(on)
10
VGS = 4.5 V
VDD = 30 V
ID = 50 A
10
TJ = 125°C
1
TJ = 25°C
TJ = −55°C
1
1
10
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
TC = 25°C
VGS ≤ 10 V
0.01 ms
TJ(initial) = 25°C
0.1 ms
IPEAK (A)
ID (A)
100
1 ms
dc
10 ms
TJ(initial) = 100°C
10
10
RDS(on) Limit
Thermal Limit
Package Limit
1
1
0.1
1
10
1E−04
100
1E−03
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
1E−02
NTMFS5C604NL
100
RqJA(t) (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
NTMFS5C604NL 650 mm2, 2 oz., Cu Single Layer Pad
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NTMFS5C604NLT1G
5C604L
DFN5
(Pb−Free)
1500 / Tape & Reel
NTMFS5C604NLT3G
5C604L
DFN5
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFS5C604NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2X
0.20 C
D
A
2
B
D1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10 C
A
0.10 C
SIDE VIEW
0.10
8X b
C A B
0.05
c
DETAIL A
RECOMMENDED
SOLDERING FOOTPRINT*
e/2
1
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
2X
0.495
e
L
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15
5.00
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.15
6.30
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
4.560
2X
1.530
4
K
3.200
E2
PIN 5
(EXPOSED PAD)
G
L1
4.530
M
D2
1.330
2X
0.905
1
BOTTOM VIEW
0.965
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
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For additional information, please contact your local
Sales Representative
NTMFS5C604NL/D