NTMFS5C442NL Power MOSFET 40 V, 2.5 mW, 130 A, Single N−Channel Features • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State Pulsed Drain Current Value Unit VDSS 40 V VGS ±20 V ID 130 A TC = 100°C TC = 25°C Steady State PD ID Operating Junction and Storage Temperature D (5) G (4) A 27 S (1,2,3) 17 PD TA = 100°C TA = 25°C, tp = 10 ms 130 A 3.7 mW @ 4.5 V W 69 28 TA = 100°C TA = 25°C 2.5 mW @ 10 V 40 V 81 TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1 & 2) Symbol W 3.1 N−CHANNEL MOSFET 1.2 IDM 900 A TJ, Tstg −55 to +175 °C MARKING DIAGRAM D 1 Source Current (Body Diode) IS 77 Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 10 A) EAS 265 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 1.8 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 41 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2016 January, 2016 − Rev. 2 ID MAX 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 S S S G D 5C442L AYWZZ D D 5C442L = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NTMFS5C442NL/D NTMFS5C442NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 24.8 VGS = 0 V, VDS = 40 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mA 100 nA 2.0 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 −5.4 mV/°C VGS = 10 V ID = 50 A 2.0 2.5 VGS = 4.5 V ID = 50 A 2.9 3.7 gFS VDS = 15 V, ID = 50 A 116 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance 3100 VGS = 0 V, f = 1 MHz, VDS = 25 V CRSS 1100 pF 37 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 32 V; ID = 50 A 23 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 32 V; ID = 50 A 50 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 5.0 nC 9.8 VGS = 4.5 V, VDS = 32 V; ID = 50 A Gate−to−Drain Charge QGD 6.7 Plateau Voltage VGP 3.1 td(ON) 12 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 32 V, ID = 50 A, RG = 1.0 W tf 72 ns 28 8.4 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.85 TJ = 125°C 0.73 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.2 V 46 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 23 ns 23 40 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS5C442NL TYPICAL CHARACTERISTICS 220 180 160 ID, DRAIN CURRENT (A) 3.8 V 3.6 V 140 3.4 V 120 3.2 V 100 80 3.0 V 60 2.8 V 40 140 120 100 80 TJ = 25°C 60 40 TJ = 125°C 20 20 0 0.5 1.0 2.0 1.5 2.5 0 3.0 1.5 2.0 2.5 3.0 3.5 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) Figure 1. On−Region Characteristics 4.5 4.0 3.5 3.0 2.5 2.0 3 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 4.0 5.0 TJ = 25°C 4.5 4.0 3.5 VGS = 4.5 V 3.0 2.5 VGS = 10 V 2.0 1.5 1.0 0 20 40 60 80 100 120 140 160 180 200 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 100,000 VGS = 10 V ID = 50 A IDSS, LEAKAGE (nA) 1.8 1.0 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 50 A 2 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 5.0 RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) TJ = −55°C 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) VDS = 3 V 160 200 ID, DRAIN CURRENT (A) 180 4.0 V 10 V to 4.5 V 1.6 1.4 1.2 1.0 TJ = 150°C 10,000 TJ = 125°C 1000 TJ = 85°C 100 0.8 0.6 −50 −25 10 0 25 50 75 100 125 150 175 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NTMFS5C442NL VGS, GATE−TO−SOURCE VOLTAGE (V) 10 3600 CISS C, CAPACITANCE (pF) 3200 2800 2400 VGS = 0 V TJ = 25°C f = 1 MHz COSS 2000 1600 1200 800 400 CRSS 0 0 5 15 10 20 25 30 35 30 QT 25 8 20 6 15 QGD QGS 4 10 VDS = 32 V TJ = 25°C ID = 50 A 2 5 0 0 0 40 4 8 12 16 20 24 28 32 36 40 44 48 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VDS, DRAIN−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 1000 t, TIME (ns) td(off) 100 IS, SOURCE CURRENT (A) 46 tf tr td(on) 10 VGS = 4.5 V VDD = 32 V ID = 50 A TJ = 125°C 41 36 31 TJ = 25°C 26 21 16 TJ = −55°C 11 6 1 1 1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 TC = 25°C VGS ≤ 10 V 0.01 ms 0.1 ms IPEAK (A) IDS (A) 100 1 ms dc TJ(initial) = 25°C 10 TJ(initial) = 100°C 10 10 ms RDS(on) Limit Thermal Limit Package Limit 1 0.1 1 1 10 100 1E−04 1E−03 VDS (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 1E−02 NTMFS5C442NL 100 RqJA(t) (°C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% NTMFS5C442NL 650 mm2, 2 oz., Cu Single Layer Pad 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device Marking Package Shipping† NTMFS5C442NLT1G 5C442L DFN5 (Pb−Free) 1500 / Tape & Reel NTMFS5C442NLT3G 5C442L DFN5 (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTMFS5C442NL PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE M 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 q E 2 c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A RECOMMENDED SOLDERING FOOTPRINT* 0.10 C SIDE VIEW 0.10 8X b C A B 0.05 c MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.15 6.30 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DETAIL A STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 2X 0.495 4.560 2X 1.530 e/2 e L 1 4 3.200 4.530 K E2 1.330 2X PIN 5 (EXPOSED PAD) L1 M 0.905 1 0.965 G D2 BOTTOM VIEW 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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