NTMFS5C646NL Power MOSFET 60 V, 4.7 mW, 93 A, Single N−Channel Features • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 25°C Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current Value Unit VDSS 60 V VGS ±20 V ID 93 A Steady State PD ID W 79 PD D (5) G (4) S (1,2,3) W 3.7 MARKING DIAGRAM 1.8 750 A TJ, Tstg −55 to +175 °C IS 100 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 5 A) EAS 185 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Source Current (Body Diode) 93 A 6.3 mW @ 4.5 V N−CHANNEL MOSFET IDM Operating Junction and Storage Temperature 4.7 mW @ 10 V A 20 14 TA = 100°C TA = 25°C, tp = 10 ms ID MAX 40 TA = 100°C TA = 25°C RDS(ON) MAX 65 TC = 100°C TA = 25°C V(BR)DSS 60 V Symbol TC = 100°C www.onsemi.com Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. D 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 5C646L A Y W ZZ S S S G D 5C646L AYWZZ D D = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case − Steady State Parameter RqJC 1.9 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 41 ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 4 1 Publication Order Number: NTMFS5C646NL/D NTMFS5C646NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 15.5 VGS = 0 V, VDS = 60 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.0 −4.9 VGS = 10 V ID = 50 A 3.8 4.7 VGS = 4.5 V ID = 50 A 5.0 6.3 gFS VDS = 15 V, ID = 50 A V mV/°C 105 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 2164 VGS = 0 V, f = 1 MHz, VDS = 25 V 900 pF 17 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 30 V; ID = 25 A 15.7 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 30 V; ID = 25 A 33.7 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 1.5 nC 5.6 VGS = 4.5 V, VDS = 30 V; ID = 25 A Gate−to−Drain Charge QGD Plateau Voltage VGP 5.1 2.8 td(ON) 10.4 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 30 V, ID = 25 A, RG = 2.5 W tf 14.9 ns 23.6 5.1 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 50 A TJ = 25°C 0.88 TJ = 125°C 0.78 tRR ta tb 1.2 V 40.9 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 20.8 ns 20.1 32 nC 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NTMFS5C646NL 3.8 V 140 10 V to 4.5 V 120 3.6 V 100 3.4 V 80 3.2 V 60 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS 3.0 V 40 2.8 V 20 0 0.5 1.0 1.5 2.0 2.5 TJ = 25°C TJ = −55°C 1.0 1.5 2.0 2.5 3.0 3.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics TJ = 25°C ID = 50 A 7 6 5 4 3 4 5 6 7 8 9 10 VGS, GATE VOLTAGE (V) 4.0 7 TJ = 25°C 6 VGS = 4.5 V 5 VGS = 10 V 4 3 10 30 50 70 90 110 130 150 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 100,000 1.8 VGS = 10 V ID = 40 A TJ = 125°C IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 8 3 TJ = 125°C 0 3.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 1.6 1.4 1.2 1.0 10,000 TJ = 85°C 1000 100 0.8 0.6 −50 −25 10 0 25 50 75 100 125 150 175 5 15 25 35 45 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 55 NTMFS5C646NL 10,000 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 C, CAPACITANCE (pF) CISS 1000 COSS 100 10 CRSS VGS = 0 V TJ = 25°C f = 1 MHz 1 0 10 20 30 40 50 30 QT 25 8 20 6 15 QGD QGS 4 10 VDS = 30 V TJ = 25°C ID = 25 A 2 5 0 60 0 0 4 8 12 16 20 24 32 28 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VDS, DRAIN−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS t, TIME (ns) VGS = 4.5 V VDD = 30 V ID = 25 A IS, SOURCE CURRENT (A) 1000 td(off) tf 100 tr td(on) 10 1 10 TJ = 125°C 1 1 10 100 0.3 0.4 0.5 TJ = 25°C 0.6 0.7 0.8 TJ = −55°C 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 100 TC = 25°C VGS ≤ 10 V 0.01 ms ID (A) IPEAK (A) 0.1 ms 100 1 ms 10 ms dc TJ(initial) = 25°C 10 TJ(initial) = 100°C 10 RDS(on) Limit Thermal Limit Package Limit 1 1 0.1 1 10 100 1E−04 1E−03 VDS (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 1E−02 NTMFS5C646NL 100 RqJA(t) (°C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% NTMFS5C646NL 650 mm2, 2 oz., Cu Single Layer Pad 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device Marking Package Shipping† NTMFS5C646NLT1G 5C646L DFN5 (Pb−Free) 1500 / Tape & Reel NTMFS5C646NLT3G 5C646L DFN5 (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTMFS5C646NL PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE M 2X 0.20 C D A 2 B D1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 2X 0.20 C 4X E1 2 q E c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A 0.10 C SIDE VIEW 0.10 8X b C A B 0.05 c DETAIL A RECOMMENDED SOLDERING FOOTPRINT* MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 5.00 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.15 6.30 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 2X 0.495 e/2 4.560 2X e L 1 1.530 4 K 3.200 4.530 E2 PIN 5 (EXPOSED PAD) L1 M 1.330 2X 0.905 G 1 D2 0.965 BOTTOM VIEW 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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