NTMFS5C426N D

NTMFS5C426N
Power MOSFET
40 V, 1.3 mW, 235 A, Single N−Channel
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
235
A
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
Pulsed Drain Current
Steady
State
PD
PD
W
3.8
−55 to
+ 175
°C
IS
122
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 19 A)
EAS
739
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
1.2
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
1
MARKING
DIAGRAM
D
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
May, 2016 − Rev. 0
N−CHANNEL MOSFET
1.9
TJ, Tstg
© Semiconductor Components Industries, LLC, 2016
D (5,6)
S (1,2,3)
A
Parameter
235 A
G (4)
900
Source Current (Body Diode)
1.3 mW @ 10 V
A
41
IDM
Operating Junction and Storage Temperature
40 V
29
TA = 100°C
TA = 25°C, tp = 10 ms
ID MAX
W
128
64
ID
TA = 100°C
TA = 25°C
RDS(ON) MAX
166
TC = 100°C
TA = 25°C
V(BR)DSS
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
S
S
S
G
D
XXXXXX
AYWZZ
D
D
XXXXXX = 5C426N
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Publication Order Number:
NTMFS5C426N/D
NTMFS5C426N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
9.6
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25°C
10
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
2.5
3.5
−8.6
VGS = 10 V
gFS
ID = 50 A
VDS =15 V, ID = 50 A
1.1
V
mV/°C
1.3
145
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
4300
VGS = 0 V, f = 1 MHz, VDS = 25 V
2100
pF
59
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 50 A
Threshold Gate Charge
QG(TH)
13
Gate−to−Source Charge
QGS
20
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
4.7
td(ON)
15
VGS = 10 V, VDS = 20 V; ID = 50 A
65
nC
12
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 10 V, VDS = 20 V,
ID = 50 A, RG = 2.5 W
tf
47
ns
36
9.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.82
TJ = 125°C
0.68
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 50 A
1.2
V
63
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
34
ns
29
92
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS5C426N
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0.0
10 V to
6.0 V
ID, DRAIN CURRENT (A)
5.2 V
4.8 V
4.4 V
4.0 V
0.5
1.0
1.5
2.0
2.5
VDS = 10 V
TJ = 25°C
TJ = 125°C
0
3.0
4
3.5
3
2.5
2
1.5
1
0.5
4.0
5.0
6.0
7.0
8.0
9.0
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
4
6
5
7
2.2
TJ = 25°C
2.0
1.8
1.6
1.4
1.2
VGS = 10 V
1.0
0.8
0.6
0
20
40
60
100 120 140 160 180 200
80
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.E−03
1.8
IDSS, LEAKAGE (A)
VGS = 10 V
ID = 50 A
1.4
1.2
1.0
1.E−04
TJ = 150°C
1.E−05
TJ = 125°C
1.E−06
0.8
0.6
−50
3
Figure 2. Transfer Characteristics
4.5
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
2
Figure 1. On−Region Characteristics
TJ = 25°C
ID = 50 A
1.6
1
TJ = −55°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
5
0
3.0
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
TJ = 85°C
1.E−07
−25
0
25
50
75
100
125
150
175
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTMFS5C426N
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
10000
C, CAPACITANCE (pF)
CISS
COSS
1000
CRSS
100
VGS = 0 V
TJ = 25°C
f = 1 MHz
10
5
0
15
10
20
25
30
35
40
10
QT
9
8
7
6
QGD
QGS
5
4
3
VDS = 20 V
ID = 50 A
TJ = 25°C
2
1
0
10
0
20
30
40
60
50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
1000
IS, SOURCE CURRENT (A)
VGS = 0 V
t, TIME (ns)
100
tr
td(off)
td(on)
10
VGS = 10 V
VDD = 20 V
ID = 50 A
tf
1.0
1
10
TJ = 150°C
TJ = 125°C
1.0
0.3
100
0.4
0.5
0.6
TJ = 25°C TJ = −55°C
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
10 ms
100
TJ = 25°C
IPEAK, (A)
ID, DRAIN CURRENT (A)
10
10
1
TC = 25°C
VGS ≤ 10 V
Single Pulse
0.1
0.1
0.5 ms
1 ms
TJ = 100°C
10 ms
RDS(on) Limit
Thermal Limit
Package Limit
1
10
10
1
1E−4
100
1E−3
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
10E−2
NTMFS5C426N
TYPICAL CHARACTERISTICS
100
RqJA (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NTMFS5C426NT1G
5C426N
DFN5
(Pb−Free)
1500 / Tape & Reel
NTMFS5C426NT3G
5C426N
DFN5
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFS5C426N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
q
E
2
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
DETAIL A
2X
0.10
b
C A B
0.05
c
0.495
8X
4.560
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.30
5.15
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
2X
1.530
e/2
e
L
1
4
3.200
K
4.530
E2
PIN 5
(EXPOSED PAD)
L1
M
1.330
2X
0.905
1
G
0.965
D2
4X
1.000
4X 0.750
BOTTOM VIEW
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMFS5C426N/D