40HFL, 70HFL, 85HFL Series Vishay High Power Products Fast Recovery Diodes (Stud Version), 40 A/70 A/85 A FEATURES • Short reverse recovery time • Low stored charge • Wide current range • Excellent surge capabilities • Stud cathode and stud anode versions • Types up to 100 VRRM • Compliant to RoHS directive 2002/95/EC DO-203AB (DO-5) TYPICAL APPLICATIONS • DC power supplies • Inverters PRODUCT SUMMARY IF(AV) • Converters 40 A/70 A/85 A • Choppers • Ultrasonic systems • Freewheeling diodes MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) IFSM I2 t CHARACTERISTICS 40HFL 70HFL 85HFL UNITS 40 70 85 A Maximum TC 85 85 85 °C 50 Hz 400 700 1100 60 Hz 420 730 1151 50 Hz 800 2450 6050 60 Hz 730 2240 5523 11 300 34 650 85 560 A I2√t VRRM Range trr TJ Document Number: 93150 Revision: 25-May-09 Range A2s I2√s 100 to 1000 V See Recovery Characteristics table ns - 40 to 125 °C For technical questions, contact: [email protected] www.vishay.com 1 40HFL, 70HFL, 85HFL Series Vishay High Power Products Fast Recovery Diodes (Stud Version), 40 A/70 A/85 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS VRRM, MAXIMUM PEAK REPETITIVE REVERSE VOLTAGE TJ = - 40 °C TO 125 °C V VRSM, MAXIMUM PEAK NON-REPETITIVE REVERSE VOLTAGE TJ = 25 °C TO 125 °C V 40HFL10S02, 40HFL10S05, 40HFL10S10 100 150 40HFL20S02, 40HFL20S05, 40HFL20S10 200 300 40HFL40S02, 40HFL40S05, 40HFL40S10 400 500 40HFL60S02, 40HFL60S05, 40HFL60S10 600 700 40HFL80S05, 40HFL80S10 800 900 40HFL100S05, 40HFL100S10 1000 1100 70HFL10S02, 70HFL10S05, 70HFL10S10 100 150 70HFL20S02, 70HFL20S05, 70HFL20S10 200 300 70HFL40S02, 70HFL40S05, 70HFL40S10 400 500 70HFL60S02, 70HFL60S05, 70HFL60S10 600 700 70HFL80S05, 70HFL80S10 800 900 70HFL100S05, 70HFL100S10 1000 1100 85HFL10S02, 85HFL10S05, 85HFL10S10 100 150 85HFL20S02, 85HFL20S05, 85HFL20S10 200 300 85HFL40S02, 85HFL40S05, 85HFL40S10 400 500 85HFL60S02, 85HFL60S05, 85HFL60S10 600 700 85HFL80S05, 85HFL80S10 800 900 85HFL100S05, 85HFL100S10 1000 1100 TYPE NUMBER (1) IFM, MAXIMUM PEAK REVERSE CURRENT AT RATED VRRM mA TJ = 25 °C TJ = 125 °C 0.1 10 0.1 15 0.1 20 Note (1) Types listed are cathode case, for anode case add “R” to code, i.e. 40HFLR20S02, 85HFLR100S05 etc. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 93150 Revision: 25-May-09 40HFL, 70HFL, 85HFL Series Fast Recovery Diodes Vishay High Power Products (Stud Version), 40 A/70 A/85 A FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at maximum case temperature IF(AV) Maximum RMS forward current TEST CONDITIONS 70HFL 85HFL UNITS 40 70 85 A 63 110 134 A 220 380 470 A 400 700 1100 420 730 1151 475 830 1308 500 870 1369 800 2450 6050 180° conduction, half sine wave 75 IF(RMS) Maximum peak repetitive forward current IFRM Sinusoidal half wave, 30° conduction t = 10 ms t = 8.3 ms Maximum peak, one-cycle non-repetitive forward current IFSM t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing (1) I2√t Maximum value of threshold voltage VF(TO) Maximum value of forward slope resistance Maximum forward voltage drop 40HFL rF VFM Sinusoidal half wave, 100 % VRRM reapplied, initial TJ = TJ maximum A Sinusoidal half wave, no voltage reapplied, initial TJ = TJ maximum 100 % VRRM reapplied, initial TJ = TJ maximum No voltage reapplied, initial TJ = TJ maximum t = 0.1 ms to 10 ms, no voltage reapplied TJ = 125 °C TJ = 25 °C, IFM = π x IF(AV) °C 730 2240 5523 1130 3460 8556 A2 s 1030 3160 7810 11 300 34 650 85 560 A2√s 1.081 1.085 1.128 V 6.33 3.40 2.11 mΩ 1.95 1.85 1.75 V Note (1) I2t for time t = I2√t • √t x x RECOVERY CHARACTERISTICS PARAMETER Typical reverse recovery time Typical reverse recovered charge SYMBOL trr Qrr Document Number: 93150 Revision: 25-May-09 TEST CONDITIONS 40HFL... 70HFL... 85HFL... S02 S05 S10 S02 S05 S10 S02 S05 S10 TJ = 25 °C, IF = 1 A to VR = 30 V, - dIF/dt = 100 A/µs 70 180 350 60 150 290 50 120 270 TJ = 25 °C, - dIF/dt = 25 A/µs, IFM = π x rated IF(AV) 200 500 1000 200 500 1000 200 500 1000 TJ = 25 °C, IF = 1 A to VR = 30 V, - dIF/dt = 100 A/µs 160 750 3100 90 500 1600 70 340 1350 TJ = 25 °C, - dIF/dt = 25 A/µs, IFM = π x rated IF(AV) 240 1300 6000 240 1300 6000 240 1300 6000 UNITS ns nC For technical questions, contact: [email protected] www.vishay.com 3 40HFL, 70HFL, 85HFL Series Vishay High Power Products Fast Recovery Diodes (Stud Version), 40 A/70 A/85 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction operating temperature range TEST CONDITIONS 40HFL 70HFL TJ - 40 to 125 Storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case RthJC DC operation RthCS Mounting surface, smooth, flat and greased Maximum thermal resistance, case to heatsink 0.60 °C 0.30 0.25 3.4 (30) Lubricated thread, tighting on nut (1) Not lubricated thread, tighting on hexagon UNITS K/W Not lubricated thread, tighting on nut (1) Maximum allowable mounting torque (+ 0 %, - 10 %) 0.36 85HFL 2.3 (20) (2) Lubricated thread, tighting on hexagon (2) 4.2 (37) N·m (lbf · in) 3.2 (28) 25 Approximate weight 0.88 Case style JEDEC DO-203AB (DO-5) Notes (1) Recommended for pass-through holes (2) Recommended for holed threaded heatsinks Fig. 1 - Reverse Recovery Time Test Waveform Fig. 2 - Current Rating Nomogram (Sinusoidal Waveforms), 40HFL Series www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 93150 Revision: 25-May-09 40HFL, 70HFL, 85HFL Series Fast Recovery Diodes Vishay High Power Products (Stud Version), 40 A/70 A/85 A Fig. 3 - Current Rating Nomogram (Rectangular Waveforms), 40HFL Series Fig. 4 - Current Rating Nomogram (Sinusoidal Waveforms), 70HFL Series 70HFL Fig. 5 - Current Rating Nomogram (Rectangular Waveforms), 70HFL Series Document Number: 93150 Revision: 25-May-09 For technical questions, contact: [email protected] www.vishay.com 5 40HFL, 70HFL, 85HFL Series Vishay High Power Products Fast Recovery Diodes (Stud Version), 40 A/70 A/85 A 85HFL Fig. 6 - Current Rating Nomogram (Sinusoidal Waveforms), 85HFL Series 85HFL Fig. 7 - Current Rating Nomogram (Rectangular Waveforms), 85HFL Series Fig. 8 - Maximum High Level Forward Power Loss vs. Average Forward Current, 40HFL Series www.vishay.com 6 Fig. 9 - Maximum High Level Forward Power Loss vs. Average Forward Current, 70HFL Series For technical questions, contact: [email protected] Document Number: 93150 Revision: 25-May-09 40HFL, 70HFL, 85HFL Series Fast Recovery Diodes Vishay High Power Products (Stud Version), 40 A/70 A/85 A Fig. 10 - Maximum High Level Forward Power Loss vs. Average Forward Current, 85HFL Series Fig. 13 - Maximum Forward Voltage vs. Forward Current, 85HFL Series Fig. 11 - Maximum Forward Voltage vs. Forward Current, 40HFL Series Fig. 14 - Average Forward Current vs. Maximum Allowable Case Temperature, 40HFL Series Fig. 12 - Maximum Forward Voltage vs. Forward Current, 70HFL Series Fig. 15 - Average Forward Current vs. Maximum Allowable Case Temperature, 70HFL Series Document Number: 93150 Revision: 25-May-09 For technical questions, contact: [email protected] www.vishay.com 7 40HFL, 70HFL, 85HFL Series Vishay High Power Products Fast Recovery Diodes (Stud Version), 40 A/70 A/85 A Fig. 16 - Average Forward Current vs. Maximum Allowable Case Temperature, 85HFL Series Fig. 17 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, All Series Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case vs. Pulse Duration, All Series Fig. 19 - Typical Reverse Recovery Time vs. Rate of Fall of Forward Current, 40HFL...S02 Series www.vishay.com 8 Fig. 20 - Typical Recovered Charge vs. Rate of Fall of Forward Current, 40HFL...S02 Series For technical questions, contact: [email protected] Document Number: 93150 Revision: 25-May-09 40HFL, 70HFL, 85HFL Series Fast Recovery Diodes Vishay High Power Products (Stud Version), 40 A/70 A/85 A Fig. 21 - Typical Reverse Recovery Time vs. Rate of Fall of Forward Current, 40HFL...S05 Series Fig. 24 - Typical Recovered Charge vs. Rate of Fall of Forward Current, 40HFL...S10 Series Fig. 22 - Typical Recovered Charge vs. Rate of Fall of Forward Current, 40HFL...S05 Series Fig. 25 - Typical Reverse Recovery Time vs. Rate of Fall of Forward Current, 70HFL...S02 Series Fig. 23 - Typical Reverse Recovery Time vs. Rate of Fall of Forward Current, 40HFL...S10 Series Fig. 26 - Typical Recovered Charge vs. Rate of Fall of Forward Current, 70HFL...S02 Series Document Number: 93150 Revision: 25-May-09 For technical questions, contact: [email protected] www.vishay.com 9 40HFL, 70HFL, 85HFL Series Vishay High Power Products Fast Recovery Diodes (Stud Version), 40 A/70 A/85 A Fig. 27 - Typical Reverse Recovery Time vs. Rate of Fall of Forward Current, 70HFL...S05 Series Fig. 30 - Typical Recovered Charge vs. Rate of Fall of Forward Current, 70HFL...S10 Series Fig. 28 - Typical Recovered Charge vs. Rate of Fall of Forward Current, 70HFL...S05 Series Fig. 31 - Typical Reverse Recovery Time vs. Rate of Fall of Forward Current, 85HFL...S02 Series Fig. 29 - Typical Reverse Recovery Time vs. Rate of Fall of Forward Current, 70HFL...S10 Series Fig. 32 - Typical Recovered Charge vs. Rate of Fall of Forward Current, 85HFL...S02 Series www.vishay.com 10 For technical questions, contact: [email protected] Document Number: 93150 Revision: 25-May-09 40HFL, 70HFL, 85HFL Series Fast Recovery Diodes Vishay High Power Products (Stud Version), 40 A/70 A/85 A Fig. 33 - Typical Reverse Recovery Time vs. Rate of Fall of Forward Current, 85HFL...S05 Series Fig. 35 - Typical Reverse Recovery Time vs. Rate of Fall of Forward Current, 85HFL...S10 Series Fig. 34 - Typical Recovered Charge vs. Rate of Fall of Forward Current, 85HFL...S05 Series Fig. 36 - Typical Recovered Charge vs. Rate of Fall of Forward Current, 85HFL...S10 Series LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93150 Revision: 25-May-09 www.vishay.com/doc?95312 For technical questions, contact: [email protected] www.vishay.com 11 Outline Dimensions Vishay Semiconductors DO-203AB (DO-5) for 40HFL, 70HFL and 85HFL DIMENSIONS FOR 40HFL/70HFL in millimeters (inches) Ø 14.6 (0.57) 6.1/7 (0.24/0.27) 4 (0.16) 4 (0.16) MIN. 25.4 (1) MAX. 10.8 (0.42) 11.4 (0.45) 11.1 ± 0.4 (0.44 ± 0.02) 1/4" 28UNF-2A for metric devices: M6 x 1 1.20 (0.04) Document Number: 95312 Revision: 29-Sep-08 17.40 (0.68) For technical questions, contact: [email protected] www.vishay.com 1 Outline Dimensions Vishay Semiconductors DO-203AB (DO-5) for 40HFL, 70HFL and 85HFL DIMENSIONS FOR 85HFL in millimeters (inches) Ø 15 (0.59) 6.1/7 (0.24/0.27) 4 (0.16) 4 (0.16) MIN. 25.4 (1) MAX. 10.8 (0.42) 11.4 (0.45) 11.1 ± 0.4 (0.44 ± 0.02) 1/4" 28UNF-2A for metric devices: M6 x 1 1.20 (0.04) www.vishay.com 2 17.35 (0.68) For technical questions, contact: [email protected] Document Number: 95312 Revision: 29-Sep-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000