10ETF..PbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES/DESCRIPTION Base cathode The 10ETF..PbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. 2 Pb-free Available RoHS* The glass passivation ensures stable reliable COMPLIANT operation in the most severe temperature and power cycling conditions. 1 Cathode TO-220AC 3 Anode This product series has been designed and qualified for industrial level and lead (Pb)-free. APPLICATIONS PRODUCT SUMMARY VRRM 200 to 600 V VF at 10 A < 1.2 V trr 50 ns • Output rectification and choppers and converters freewheeling in inverters, • Input rectifications where severe restrictions on conducted EMI should be met MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM IF(AV) VALUES UNITS 200 to 600 V Sinusoidal waveform 10 IFSM A 150 trr 1 A, 100 A/µs VF 10 A, TJ = 25 °C 50 ns 1.2 V - 40 to 150 °C VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA TJ VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 10ETF02PbF 200 300 10ETF04PbF 400 500 10ETF06PbF 600 700 2 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current SYMBOL TEST CONDITIONS IF(AV) TC = 128 °C, 180° conduction half sine wave 10 10 ms sine pulse, rated VRRM applied 150 IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t VALUES 10 ms sine pulse, no voltage reapplied 160 10 ms sine pulse, rated VRRM applied 112.5 10 ms sine pulse, no voltage reapplied 160 t = 0.1 to 10 ms, no voltage reapplied 1600 UNITS A A2 s A2√s * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94090 Revision: 17-Apr-08 For technical questions, contact: [email protected] www.vishay.com 1 10ETF..PbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS VALUES 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C 1.2 V 23.5 mΩ 0.85 V 0.1 VR = Rated VRRM TJ = 150 °C UNITS mA 3.0 RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Reverse recovery time trr IF at 10 Apk 145 ns Reverse recovery current Irr 2.75 A Reverse recovery charge Qrr 25 A/µs 25 °C 0.32 µC Snap factor S IFM trr t dir dt 0.6 Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance junction to case RthJC Maximum thermal resistance junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation Marking device www.vishay.com 2 UNITS - 40 to 150 °C 1.5 62 Mounting surface, smooth and greased °C/W 0.5 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES Case style TO-220AC (JEDEC) For technical questions, contact: [email protected] 10ETF06 Document Number: 94090 Revision: 17-Apr-08 10ETF..PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A 20 10ETF.. Series RthJC (DC) = 1.5 °C/W 145 140 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 Ø Conduction angle 135 130 125 30° 60° 90° 120° 10ETF.. Series TJ = 150 °C 16 120° 180° DC 30° RMS limit 12 8 Ø 4 Conduction period 0 0 2 4 10 8 6 12 4 0 8 12 16 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 160 150 10ETF.. Series RthJC (DC) = 1.5 °C/W 140 Ø Conduction period 135 130 Peak Half Sine Wave Forward Current (A) 145 120° 125 0 4 2 100 80 10ETF.. Series DC 90° 6 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 120 60 60° 30° At any rated load condition and with rated VRRM applied following surge. 140 180° 40 120 8 10 14 12 1 16 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Average Forward Current (A) Fig. 2 - Current Rating Characteristics 180 16 120° 14 90° 60° 12 180° 30° 10 RMS limit 8 6 Ø 4 Conduction angle 2 10ETF.. Series TJ = 150 °C 2 4 6 8 10 Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 140 120 100 80 60 0 0 Maximum non-repetitive surge current versus pulse train duration. 160 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 90° 60° 180° 120 Maximum Allowable Case Temperature (°C) Vishay High Power Products 10ETF.. Series 40 0.01 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Document Number: 94090 Revision: 17-Apr-08 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions, contact: [email protected] www.vishay.com 3 10ETF..PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A 100 1.4 10ETF.. Series TJ = 25 °C 10ETF.. Series 1.2 Qrr - Maximum Reverse Recovery Charge (µC) Instantaneous Forward Current (A) Vishay High Power Products TJ = 150 °C TJ = 25 °C 10 IFM = 20 A 1.0 IFM = 10 A 0.8 0.6 IFM = 5 A 0.4 IFM = 2 A 0.2 IFM = 1 A 1 0.5 0 1.0 1.5 2.0 2.5 3.0 0 40 80 200 Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 0.20 2.5 0.15 Qrr - Maximum Reverse Recovery Charge (µC) 10ETF.. Series TJ = 150 °C trr - Maximum Reverse Recovery Time (µs) 160 dI/dt - Rate of Fall of Forward Current (A/µs) Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics IFM = 20 A IFM = 10 A 0.10 IFM = 5 A IFM = 2 A 0.05 10ETF.. Series TJ = 25 °C IFM = 20 A 2.0 IFM = 10 A 1.5 IFM = 5 A 1.0 IFM = 2 A 0.5 IFM = 1 A IFM = 1 A 0 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 0.4 15 10ETF.. Series TJ = 25 °C Irr - Maximum Reverse Recovery Current (A) 10ETF.. Series TJ = 150 °C trr - Maximum Reverse Recovery Time (µs) 120 0.3 IFM = 20 A 0.2 IFM = 10 A IFM = 5 A 0.1 IFM = 2 A IFM = 20 A 12 IFM = 10 A IFM = 5 A 9 IFM = 2 A 6 IFM = 1 A 3 IFM = 1 A 0 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94090 Revision: 17-Apr-08 10ETF..PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A Vishay High Power Products 20 Irr - Maximum Reverse Recovery Current (A) 10ETF.. Series TJ = 150 °C IFM = 20 A 16 IFM = 10 A IFM = 5 A 12 IFM = 2 A 8 IFM = 1 A 4 0 0 40 80 120 160 200 ZthJC - Transient Thermal Impedance (°C/W) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 10 Steady state value (DC operation) 1 0.1 0.01 Single pulse 0.001 0.001 Document Number: 94090 Revision: 17-Apr-08 0.01 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 10ETF.. Series 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics For technical questions, contact: [email protected] www.vishay.com 5 10ETF..PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A Vishay High Power Products ORDERING INFORMATION TABLE Device code 10 E T F 06 PbF 1 2 3 4 5 6 1 - Current rating (10 = 10 A) 2 - Circuit configuration: 3 - E = Single diode Package: T = TO-220AC 4 - 5 - 6 - Type of silicon: F = Fast soft recovery rectifier Voltage code x 100 = VRRM None = Standard production 02 = 200 V 04 = 400 V 06 = 600 V PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95221 Part marking information http://www.vishay.com/doc?95224 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94090 Revision: 17-Apr-08 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A ØP 0.014 M B A M E2 (7) Q 3 D D L1 E A1 C Thermal pad C H1 D2 Detail B (6) 2 x b2 2xb Detail B θ D1 1 2 A (6) H1 (7) (6) D 1 2 3 Lead tip L3 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode L4 L c e1 A Conforms to JEDEC outline TO-220AC View A - A A2 0.015 M B A M SYMBOL MILLIMETERS INCHES NOTES SYMBOL MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E1 A1 1.14 1.40 0.045 0.055 A2 2.56 2.92 0.101 0.115 b 0.69 1.01 0.027 0.040 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 MILLIMETERS INCHES MAX. MIN. MAX. 6.86 8.89 0.270 0.350 6 E2 - 0.76 - 0.030 7 e 2.41 2.67 0.095 0.105 e1 4.88 5.28 0.192 0.208 4 H1 6.09 6.48 0.240 0.255 L 13.52 14.02 0.532 0.552 4 L1 3.32 3.82 0.131 0.150 c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 D 14.85 15.25 0.585 0.600 3 ØP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 NOTES MIN. 90° to 93° 6, 7 2 2 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1