10ETF..FPPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES/DESCRIPTION Base cathode The 10ETF06FPPbF fast soft recovery rectifier Available series has been optimized for combined short reverse recovery time and low forward voltage RoHS* COMPLIANT drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. 2 1 Cathode TO-220AC FULL-PAK The fully isolated package (VINS = 2500 VRMS) is UL E78996 approved. 3 Anode This product series has been designed and qualified for industrial level and lead (Pb)-free. PRODUCT SUMMARY APPLICATIONS VRRM 200 to 600 V VF at 10 A < 1.2 V trr 50 ns • Output rectification and choppers and converters freewheeling in inverters, • Input rectifications where severe restrictions on conducted EMI should be met MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM IF(AV) VALUES UNITS 200 to 600 V Sinusoidal waveform 10 IFSM A 150 trr 1 A, 100 A/µs VF 10 A, TJ = 25 °C 50 TJ ns 1.2 V - 40 to 150 °C IRRM AT 150 °C mA VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 10ETF02FPPbF 200 300 10ETF04FPPbF 400 500 10ETF06FPPbF 600 700 2 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current SYMBOL IF(AV) IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t TEST CONDITIONS VALUES TC = 98 °C, 180° conduction half sine wave 10 10 ms sine pulse, rated VRRM applied 150 10 ms sine pulse, no voltage reapplied 160 10 ms sine pulse, rated VRRM applied 112.5 10 ms sine pulse, no voltage reapplied 160 t = 0.1 to 10 ms, no voltage reapplied 1600 UNITS A A2s A2√s * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94089 Revision: 28-May-08 For technical questions, contact: [email protected] www.vishay.com 1 10ETF..FPPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS VALUES 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C 1.2 V 23.5 mΩ 0.85 V 0.1 VR = Rated VRRM TJ = 150 °C UNITS mA 3.0 RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Reverse recovery time trr IF at 10 Apk 145 ns Reverse recovery current Irr 2.75 A Reverse recovery charge Qrr 25 A/µs 25 °C 0.32 µC Snap factor S IFM trr t dir dt 0.6 Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance junction to case RthJC Maximum thermal resistance junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation Marking device www.vishay.com 2 UNITS - 40 to 150 °C 2.5 62 Mounting surface, smooth and greased Approximate weight Mounting torque VALUES minimum maximum °C/W 0.5 2 g 0.07 oz. 6 (5) kgf · cm (lbf · in) 12 (10) Case style TO-220AC FULL-PAK (94/V0) For technical questions, contact: [email protected] 10ETF06FP Document Number: 94089 Revision: 28-May-08 10ETF..FPPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A 20 10ETF.. Series RthJC (DC) = 2.5 °C/W 140 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 130 Ø Conduction angle 120 110 100 90 30° 60° 90° 120° 10ETF.. Series TJ = 150 °C 16 120° 180° DC 30° RMS limit 12 8 Ø 4 Conduction period 0 0 2 6 4 10 8 12 4 0 8 12 16 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 160 150 10ETF.. Series RthJC (DC) = 2.5 °C/W 130 Ø Conduction period 120 110 Peak Half Sine Wave Forward Current (A) 140 At any rated load condition and with rated VRRM applied following surge. 140 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 120 100 80 60 100 30° 60° 90° 120° DC 180° 0 2 4 8 6 12 10 14 16 10ETF.. Series 40 90 1 18 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Average Forward Current (A) Fig. 2 - Current Rating Characteristics 180 16 Maximum non-repetitive surge current versus pulse train duration. 120° 14 160 90° 60° 12 180° 30° 10 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 90° 60° 180° 80 Maximum Allowable Case Temperature (°C) Vishay High Power Products RMS limit 8 6 Ø 4 Conduction angle 2 10ETF.. Series TJ = 150 °C 0 2 4 6 8 10 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Document Number: 94089 Revision: 28-May-08 120 100 80 60 0 Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 140 10ETF.. Series 40 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions, contact: [email protected] www.vishay.com 3 10ETF..FPPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A 100 1.4 10ETF.. Series TJ = 25 °C 10ETF.. Series 1.2 Qrr - Maximum Reverse Recovery Charge (µC) Instantaneous Forward Current (A) Vishay High Power Products TJ = 150 °C TJ = 25 °C 10 IFM = 20 A 1.0 IFM = 10 A 0.8 0.6 IFM = 5 A 0.4 IFM = 2 A 0.2 IFM = 1 A 1 0.5 0 1.0 1.5 2.0 2.5 3.0 0 40 80 200 Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 0.20 2.5 0.15 Qrr - Maximum Reverse Recovery Charge (µC) 10ETF.. Series TJ = 150 °C trr - Maximum Reverse Recovery Time (µs) 160 dI/dt - Rate of Fall of Forward Current (A/µs) Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics IFM = 20 A IFM = 10 A 0.10 IFM = 5 A IFM = 2 A 0.05 10ETF.. Series TJ = 25 °C IFM = 1 A 0 40 80 120 160 IFM = 20 A 2.0 IFM = 10 A 1.5 IFM = 5 A 1.0 IFM = 2 A 0.5 IFM = 1 A 0 0 200 0 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 0.4 15 10ETF.. Series TJ = 150 °C 10ETF.. Series TJ = 25 °C Irr - Maximum Reverse Recovery Current (A) trr - Maximum Reverse Recovery Time (µs) 120 0.3 IFM = 20 A 0.2 IFM = 10 A IFM = 5 A 0.1 IFM = 2 A IFM = 20 A 12 IFM = 10 A IFM = 5 A 9 IFM = 2 A 6 IFM = 1 A 3 IFM = 1 A 0 0 40 80 120 160 200 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94089 Revision: 28-May-08 10ETF..FPPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A Vishay High Power Products 20 Irr - Maximum Reverse Recovery Current (A) 10ETF.. Series TJ = 150 °C IFM = 20 A 16 IFM = 10 A IFM = 5 A 12 IFM = 2 A 8 IFM = 1 A 4 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) ZthJC - Transient Thermal Impedance (°C/W) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.1 0.0001 Document Number: 94089 Revision: 28-May-08 0.001 0.01 10ETF.. Series 0.1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics For technical questions, contact: [email protected] www.vishay.com 5 10ETF..FPPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A Vishay High Power Products ORDERING INFORMATION TABLE Device code 10 E T F 06 FP PbF 1 2 3 4 5 6 7 1 - 2 - Current rating (10 = 10 A) Circuit configuration: E = Single diode 3 - Package: T = TO-220AC 4 - Type of silicon: 5 - Voltage code x 100 = VRRM 6 - FULL-PAK 7 - F = Fast soft recovery rectifier 02 = 200 V 04 = 400 V 06 = 600 V None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95005 Part marking information http://www.vishay.com/doc?95009 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94089 Revision: 28-May-08 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.9 0.7 0.61 0.38 2.54 TYP. R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° Revision: 20-Jul-11 5° ± 0.5° 1.4 1.3 2.85 2.65 1.15 TYP. 1.05 Lead assignments Diodes 1 + 2 - Cathode 3 - Anode Conforms to JEDEC outline TO-220 FULL-PAK Document Number: 95005 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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