VISHAY BFW92A_08

Not for new design, this product will be obsoleted soon
BFW92A
Vishay Semiconductors
Silicon NPN Planar RF Transistor
B
1
C
3
Features
•
•
•
•
3
2
High power gain
Low noise figure
e3
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
E
2
1
Applications
19039
Electrostatic sensitive device.
Observe precautions for handling.
Wide band RF amplifier up to GHz range.
Mechanical Data
Marking: BFW92A
Pinning: 1 = Collector, 2 = Emitter, 3 = Base
Case: TO-50 Plastic case
Weight: approx. 111 mg
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Unit
Collector-base voltage
Parameter
Test condition
VCBO
25
V
Collector-emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
2.5
V
Collector current
Total power dissipation
IC
25
mA
Ptot
300
mW
Tj
150
°C
Tstg
- 55 to + 150
°C
Symbol
Value
Unit
RthJA
300
K/W
Tamb ≤ 60 °C
Junction temperature
Storage temperature range
Amplifier 1
Parameter
Junction ambient
1)
Test condition
1)
on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Collector-base cut-off current
Test condition
VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 2.5 V, IC = 0
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
Collector-emitter saturation
voltage
IC = 20 mA, IB = 2 mA
DC forward current transfer ratio VCE = 1 V, IC = 2 mA
Collector-emitter cut-off current
Document Number 85041
Rev. 1.5, 08-Sep-08
Symbol
Min
Typ.
ICBO
IEBO
V(BR)CEO
Max
Unit
100
nA
10
μA
15
VCEsat
hFE
20
VCE = 1 V, IC = 25 mA
hFE
20
VCE = 25 V, VBE = 0
ICES
V
0.1
0.6
50
150
100
V
μA
www.vishay.com
1
BFW92A
Vishay Semiconductors
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Test condition
Symbol
Min
Typ.
Max
Unit
VCE = 5 V, IC = 2 mA,
f = 300 MHz
fT
1.5
GHz
VCE = 5 V, IC = 14 mA,
f = 300 MHz
fT
3.5
GHz
VCE = 5 V, IC = 25 mA,
f = 300 MHz
fT
3.2
GHz
Ccb
0.45
pF
pF
VCB = 5 V, f = 1 MHz
Collector-emitter capacitance
VCE = 5 V, f = 1 MHz
Cce
0.3
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
1.4
pF
Noise figure
VCE = 5 V, IC = 2 mA,
ZS = 50 Ω, f = 800 MHz
F
2.5
dB
Power gain
VCE = 10 V, IC = 14 mA,
ZS = 50 Ω, f = 800 MHz
Gpe
13
dB
Linear output voltage - two tone
intermodulation test
VCE = 10 V, IC = 14 mA,
dIM = 60 dB, f1 = 806 MHz,
f2 = 810 MHz, ZS = ZL = 50 Ω
V1 = V2
150
mV
www.vishay.com
2
Document Number 85041
Rev. 1.5, 08-Sep-08
BFW92A
Vishay Semiconductors
Common Emitter S-Parameters
Z0 = 50 Ω, Tamb = 25 °C, unless otherwise specified
VCE/V
IC/mA
f/MHz
S11
S21
LIN
MAG
ANG
LIN
MAG
ANG
5
5
5
5
10
10
2
40
0.84
-12.3
6.97
100
200
0.81
-29.8
0.71
-55.5
500
0.46
800
0.37
1000
1200
5
40
10
14
20
2
5
Document Number 85041
Rev. 1.5, 08-Sep-08
S22
LIN
MAG
ANG
171.2
0.01
6.63
157.6
5.79
138.3
-112.8
3.60
101.7
0.07
45.9
0.74
-23.0
-154.9
2.51
79.9
0.08
44.7
0.68
-27.1
0.36
-176.5
2.09
68.5
0.09
46.5
0.66
-30.1
0.37
164.3
1.79
59.2
0.10
49.2
0.65
-33.9
0.69
-19.0
14.09
166.1
0.01
81.6
0.98
-6.4
100
0.62
-44.5
12.56
146.9
0.02
70.6
0.91
-14.3
200
0.48
-77.7
9.55
124.4
0.04
60.5
0.78
-20.4
500
0.29
-140.0
4.88
91.8
0.06
57.2
0.62
-22.6
-25.5
deg
5
S12
LIN
MAG
ANG
83.9
0.99
-3.9
0.03
74.5
0.97
-8.8
0.05
62.0
0.90
-15.5
deg
deg
deg
800
0.27
-179.5
3.22
74.4
0.08
59.5
0.58
1000
0.28
162.1
2.64
64.8
0.10
59.8
0.57
-28.2
1200
0.30
147.0
2.25
56.7
0.11
59.5
0.56
--32.1
40
0.50
-28.1
22.54
159.9
0.01
79.5
0.95
-9.6
100
0.42
-63.0
18.21
136.2
0.02
69.3
0.83
-18.6
200
0.31
-102.5
12.12
113.8
0.03
64.8
0.67
-21.9
500
0.22
-165.2
5.55
86.2
0.06
66.9
0.56
-20.7
800
0.23
163.3
3.59
71.0
0.08
66.6
0.53
-23.2
1000
0.25
147.9
2.93
62.7
0.10
65.2
0.53
-26.4
1200
0.27
136.9
2.49
55.1
0.12
63.3
0.52
-30.4
40
0.40
-34.7
27.07
156.6
0.01
79.1
0.94
-11.4
100
0.32
-75.4
20.46
131.2
0.02
70.3
0.78
-19.9
200
0.25
-117.5
12.81
109.6
0.03
68.4
0.63
-21.5
500
0.21
-176.5
5.74
84.2
0.05
70.4
0.54
-19.3
800
0.22
156.6
3.70
69.8
0.08
68.8
0.52
-22.4
1000
0.24
143.2
3.00
61.7
0.10
66.7
0.51
-25.3
1200
0.27
133.5
2.56
54.4
0.12
64.3
0.50
-29.3
40
0.30
-44.1
31.41
153.0
0.01
78.8
0.92
-12.9
100
0.25
-92.4
22.21
126.9
0.02
71.9
0.74
-20.8
200
0.21
-134.8
13.39
105.9
0.02
71.9
0.60
-20.7
500
0.20
175.3
5.83
82.5
0.05
73.0
0.52
-18.3
800
0.23
151.7
3.74
68.6
0.08
70.3
0.51
-21.3
1000
0.25
140.1
3.03
60.7
0.11
67.8
0.50
-24.3
1200
0.27
131.1
2.58
53.5
0.12
65.0
0.50
-29.3
40
0.86
-11.1
6.60
172.0
0.01
84.3
0.99
-2.9
100
0.83
-26.9
6.31
159.2
0.02
75.9
0.98
-7.1
200
0.73
-50.7
5.61
140.8
0.04
64.0
0.92
-12.6
500
0.48
-105.5
3.61
104.3
0.06
47.9
0.79
-19.3
800
0.37
-147.9
2.54
82.4
0.07
46.8
0.74
-23.2
1000
0.35
-170.9
2.11
71.1
0.07
49.3
0.73
-26.1
1200
0.36
168.4
1.82
61.7
0.08
52.9
0.72
-29.6
40
0.71
-17.3
14.26
166.7
0.01
82.0
0.98
-5.2
www.vishay.com
3
BFW92A
Vishay Semiconductors
VCE/V
IC/mA
f/MHz
S11
S21
LIN
MAG
ANG
100
0.64
200
500
ANG
-40.8
12.70
0.49
-71.5
0.28
-131.6
800
0.23
1000
10
10
10
14
20
S22
LIN
MAG
ANG
LIN
MAG
ANG
148.3
0.02
71.7
0.93
-11.3
9.77
126.0
5.11
93.3
0.03
62.2
0.82
-16.5
0.05
59.4
0.69
-174.1
3.37
-18.9
76.0
0.07
62.2
0.66
0.24
165.2
2.76
-21.5
66.7
0.08
63.1
0.65
-24.4
1200
0.26
148.7
40
0.54
-25.0
2.35
58.7
0.09
63.3
0.64
-27.9
22.82
160.8
0.01
80.2
0.96
100
0.45
-56.6
-7.7
18.41
137.9
0.02
70.6
0.86
-14.9
200
0.31
500
0.19
-92.1
12.55
115.3
0.02
66.0
0.73
-17.6
-156.0
5.82
87.5
0.05
68.5
0.63
800
0.19
-17.1
166.8
3.77
72.4
0.07
68.9
0.62
-20.1
1000
1200
0.20
149.3
3.06
64.1
0.09
67.9
0.61
-22.9
0.23
136.8
2.61
57.0
0.10
66.5
0.60
-26.7
40
0.46
-29.9
27.41
157.7
0.01
79.7
0.95
-9.0
100
0.36
-65.4
20.92
132.7
0.01
70.9
0.83
-15.8
200
0.25
-103.9
13.42
111.0
0.02
69.0
0.70
-17.0
500
0.17
-168.1
6.01
85.4
0.05
71.5
0.62
-16.0
800
0.18
159.0
3.87
71.1
0.07
70.7
0.61
-19.4
1000
0.20
143.7
3.14
63.2
0.09
69.2
0.60
-22.1
1200
0.23
132.8
2.67
56.2
0.10
67.3
0.60
-26.3
40
0.36
-37.2
32.18
153.6
0.01
79.2
0.93
-10.2
100
0.28
-79.1
22.97
127.2
0.01
72.3
0.79
-16.2
200
0.20
-120.0
14.03
106.7
0.02
72.4
0.67
-16.0
500
0.16
-178.6
6.12
83.3
0.05
74.0
0.61
-15.1
800
0.18
152.8
3.91
69.8
0.07
72.4
0.60
-18.3
1000
0.20
139.5
3.18
62.0
0.09
70.3
0.60
-21.6
1200
0.23
130.3
2.70
55.2
0.10
68.1
0.59
-25.8
deg
10
S12
LIN
MAG
deg
deg
deg
(mW)
f T – Transition Frequency ( MHz )
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
4000
3500
3000
2500
2000
1500
1000
V CE = 5 V
f = 300 MHz
500
0
0
(°C)
Figure 1. Total Power Dissipation vs. Ambient Temperature
www.vishay.com
4
13610
5
10 15 20 25 30 35 40 45
I C – Collector Current ( mA )
Figure 2. Transition Frequency vs. Collector Current
Document Number 85041
Rev. 1.5, 08-Sep-08
BFW92A
1.0
5
F – Noise Figure ( dB )
Ccb – Collector Base Capacitance ( pF )
Vishay Semiconductors
0.8
0.6
0.4
0.2
3
2
V CE = 5 V
f = 800 MHz
ZS = 50 Ω
1
f = 1 MHz
0.0
0
0
13611
4
4
8
12
16
20
V CB – Collector Base Voltage ( V )
0
13607
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
5
10
15
20
25
I C – Collector Current ( mA )
30
Figure 4. Noise Figure vs. Collector Current
Package Dimensions in mm
96 12244
Document Number 85041
Rev. 1.5, 08-Sep-08
www.vishay.com
5
BFW92A
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
6
Document Number 85041
Rev. 1.5, 08-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1