BYM07-50 thru BYM07-400, EGL34A thru EGL34G Vishay Semiconductors formerly General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier Reverse Voltage 50 to 400V Forward Current 0.5A Features * d e t n e Pat DO-213AA SOLDERABLE ENDS 1st BAND 2nd BAND • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Capable of meeting environmental standards of MIL-S-19500 • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Fast switching for high efficiency • High temperature soldering guaranteed: 450°C/5 seconds at terminals. Complete device submersible temperature of 260°C for 10 seconds in solder bath D1= 0.066 0.060 (1.676) (1.524) D2 0.022 (0.559) 0.016 (0.406) D2 = D1 + 0 - 0.008 (0.20) 0.145 (3.683) 0.131(3.327) Mechanical Data Case: JEDEC DO-213AA, molded plastic over glass body Terminals: Plated terminals, solderable per MIL-STD-750, Method 2026 Polarity: Two bands indicate cathode end – 1st band denotes device type and 2nd band denotes repetitive peak reverse voltage rating Mounting Position: Any Weight: 0.0014 oz., 0.036 g 1st band denotes type and polarity 2nd band denotes voltage type Dimensions in inches and (millimeters) ® *Glass-plastic encapsulation is covered by Patent No. 3,996,602 and brazed-lead assembly to Patent No. 3,930,306 Maximum Ratings & Thermal Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified. Symbol BYM07-50 BYM07-100 BYM07-150 BYM07-200 BYM07-300 BYM07-400 Fast efficient device: 1st band is Green Polarity color bands (2nd Band) EGL34A EGL34B EGL34C EGL34D EGL34F Unit EGL34G Gray Red Pink Maximum repetitive peak reverse voltage VRRM 50 100 150 Orange Brown Yellow 200 300 400 V Maximum RMS voltage VRMS 35 70 105 140 210 280 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 V Maximum average forward rectified current at TT = 75°C IF(AV) 0.5 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 10 A Maximum full load reverse current, full cycle average at TA = 55°C IR(AV) 50 µA RΘJA RΘJT 150 70 °C/W TJ,TSTG –65 to +175 °C Maximum thermal resistance (Note 1, 2) Operating junction and storage temperature range Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol BYM07-50 BYM07-100 BYM07-150 BYM07-200 BYM07-300 BYM07-400 EGL34A Maximum DC reverse current at rated DC blocking voltage TA = 25°C TA = 125°C Maximum instantaneous forward voltage at 0.5A Max. reverse recovery time at IF = 0.5A, IR = 1.0A, Ir r= 0.25A Typical junction capacitance at 4.0V, 1MHz EGL34B EGL34C EGL34D IR 5.0 50 VF 1.25 EGL34F Unit EGL34G µA 1.35 V trr 50 ns CJ 7.0 pF Notes: (1) Thermal resistance from junction to ambient, 0.24 x 0.24” (6.0 x 6.0mm) copper pads to each terminal (2) Thermal resistance from junction to terminal, 0.24 x 0.24” (6.0 x 6.0mm) copper pads to each terminal Document Number 88580 03-Apr-03 www.vishay.com 1 BYM07-50 thru BYM07-400, EGL34A thru EGL34G Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Fig. 1 – Forward Current Derating Curve 12 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 0.5 0.4 0.3 0.2 Resistive or Inductive Load 0.1 10 8.0 6.0 4.0 2.0 0 0 0 25 50 75 100 125 150 175 10 100 Number of Cycles at 60 HZ Fig. 3 – Typical Instantaneous Forward Characteristics Fig. 4 – Typical Reverse Characteristics 100 Instantaneous Reverse Leakage Current (µA) Pulse Width = 300µs 1% Duty Cycle 10 TJ = 150°C 1 TJ = 25°C 10 TJ = 150°C 1 TJ = 125°C 0.1 0.1 TJ = 75°C 0.01 0.01 0.2 35 EGL34A – EGL34D EGL34F & EGL34G 0.001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 2.0 1.8 TJ = 25°C 0 20 40 60 80 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance Fig. 6 – Typical Transient Thermal Impedance TJ = 25°C f = 1.0 MHZ Vsig = 50mVp-p 30 25 20 15 10 5 0 0.1 1 10 Reverse Voltage (V) www.vishay.com 2 100 100 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 1 Terminal Temperature (°C) 50 Junction Capacitance (pF) TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) 10 1 0.1 0.01 0.1 1 10 100 t, Pulse Duration (sec.) Document Number 88580 03-Apr-03