GF1A thru GF1M Vishay Semiconductors formerly General Semiconductor Surface Mount Glass Passivated Rectifier DO-214BA (GF1) Reverse Voltage 50 to 1000V Forward Current 1.0A * d e t n e t a P ® 0.066 (1.68) 0.040 (1.02) Mounting Pad Layout 0.066 MIN. (1.68 MIN.) 0.094 MAX. (2.38 MAX.) Dimensions in inches and (millimeters) 0.187 (4.75) 0.167 (4.24) Glass-plastic encapsulation technique is covered by Patent No. 3,996,602, brazen-lead assembly by Patent No. 3,930,306 and lead forming by Patent No. 5,151,846 0.052 MIN. (1.32 MIN.) 0.015 (0.38) 0.0065 (0.17) 0.220 (5.58) REF 0.108 (2.74) 0.098 (2.49) 0.118 (3.00) 0.100 (2.54) 0.060 (1.52) 0.030 (0.76) 0.006 (0.152) TYP. Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Ideal for surface mount automotive applications • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Capable of meeting environmental standards of MIL-S-19500 • Built-in strain relief • Easy pick and place • High temperature soldering guaranteed: 450°C/5 seconds at terminals. • Complete device submersible temperature of 265°C for 10 seconds in solder bath 0.114 (2.90) 0.094 (2.39) 0.226 (5.74) 0.196 (4.98) Mechanical Data Case: JEDEC DO-214BA, molded plastic over glass body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.0048 oz, 0.120 g Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Symbol GF1A GF1B GF1D GF1G GF1J GF1K GF1M Unit Parameter Device marking code GA GB GD GG GJ GK GM Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current at TL = 125°C IF(AV) 1.0 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A RΘJA RΘJL 80 26 °C/W TJ,TSTG –65 to +175 °C Typical thermal resistance(1) Operating junction and storage temperature range Electrical Characteristics (T J = 25°C unless otherwise noted) Symbol GF1A GF1B GF1D GF1G GF1J GF1K GF1M Unit Parameter Maximum instantaneous forward voltage at 1.0A VF 1.10 Maximum DC reverse current at rated DC blocking voltage IR 5.0 50 µA Typical reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25 A trr 3.0 µs Typical junction capacitance at 4.0V, 1MHz CJ 15 pF TA = 25°C TA = 125°C 1.20 V Note: (1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas Document Number 88617 08-Jul-02 www.vishay.com 1 GF1A thru GF1M Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Fig. 1 – Forward Current Derating Curve Peak Forward Surge Current (A) Average Forward Rectified Current (A) 30 60 HZ Resistive or Inductive Load 1.0 0.5 P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0mm) Copper Pad Areas 0 100 TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) 25 20 15 10 5 0 110 120 130 140 150 160 175 1 Fig. 4 – Typical Reverse Characteristics 10 IR — Instantaneous Reverse Leakage Current (mA) 10 1 0.1 0.01 0.4 Pulse Width = 300µs 1% Duty Cycle TJ = 25°C 0.6 0.8 1.0 1.2 1.4 1 TJ = 100°C 0.1 TJ = 25°C 0.01 0 1.6 20 40 60 80 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance Fig. 6 – Typical Transient Thermal Impedance 30 10 1 1 10 Reverse Voltage (V) www.vishay.com 2 100 100 TJ = 25°C f = 1.0 MHZ Vsig = 50mVp-p Transient Thermal Impedance (°C/W) IF — Instantaneous Forward Current (A) Fig. 3 – Typical Instantaneous Forward Characteristics pF — Junction Capacitance 100 10 Number of Cycles at 60 HZ Lead Temperature (°C) 100 Mounted on 0.2 x 0.27" (5.0 x 7.0mm) Copper Pad Areas 10 1 0.1 0.01 0.1 1 10 100 t — Pulse Duration (sec.) Document Number 88617 08-Jul-02