SF5400, SF5401, SF5402, SF5403, SF5404, SF5405, SF5406, SF5407, SF5408 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Glass passivated • Hermetically sealed axial leaded glass envelope • Low reverse current • High reverse voltage • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 949588 • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA APPLICATIONS Case: SOD-64 • Switched mode power supplies Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 • High-frequency inverter circuits Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE SF5400 VR = 50 V; IFAV = 3 A SOD-64 SF5401 VR = 100 V; IFAV = 3 A SOD-64 SF5402 VR = 200 V; IFAV = 3 A SOD-64 SF5403 VR = 300 V; IFAV = 3 A SOD-64 SF5404 VR = 400 V; IFAV = 3 A SOD-64 SF5405 VR = 500 V; IFAV = 3 A SOD-64 SF5406 VR = 600 V; IFAV = 3 A SOD-64 SF5407 VR = 800 V; IFAV = 3 A SOD-64 SF5408 VR = 1000 V; IFAV = 3 A SOD-64 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage = repetitive peak reverse voltage Peak forward surge current TEST CONDITION See electrical characteristics tp = 10 ms, half sine wave Average forward current Junction and storage temperature range Non repetitive reverse avalanche energy Document Number: 86061 Rev. 1.8, 25-May-11 I(BR)R = 0.4 A PART SYMBOL VALUE UNIT SF5400 VR = VRRM 50 V SF5401 VR = VRRM 100 V SF5402 VR = VRRM 200 V SF5403 VR = VRRM 300 V SF5404 VR = VRRM 400 V SF5405 VR = VRRM 500 V SF5406 VR = VRRM 600 V SF5407 VR = VRRM 800 V SF5408 VR = VRRM 1000 V IFSM 150 A IFAV 3 A Tj = Tstg - 55 to + 175 °C ER 10 mJ For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 91 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SF5400, SF5401, SF5402, SF5403, SF5404, SF5405, SF5406, SF5407, SF5408 Ultra-Fast Avalanche Sinterglass Diode Vishay Semiconductors MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, TL = constant RthJA 25 K/W On PC board with spacing 25 mm RthJA 70 K/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION IF = 3 A Forward voltage PART SF5400 SF5401 SF5402 SF5403 SF5404 SF5405 SF5406 SF5407 SF5408 VR = VRRM Reverse current SYMBOL VF VF VF VF VF VF VF VF VF IR MIN. - TYP. - MAX. 1.1 1.1 1.1 1.1 1.1 1.7 1.7 1.7 1.7 5 UNIT V V V V V V V V V μA IR V(BR)R V(BR)R V(BR)R V(BR)R V(BR)R V(BR)R V(BR)R V(BR)R V(BR)R trr trr trr trr trr trr trr trr trr 60 110 220 330 440 550 660 880 1100 - - 50 50 50 50 50 50 75 75 75 75 μA V V V V V V V V V ns ns ns ns ns ns ns ns ns VR = VRRM, Tj = 125 °C IR = 100 μA Reverse breakdown voltage Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A SF5400 SF5401 SF5402 SF5403 SF5404 SF5405 SF5406 SF5407 SF5408 SF5400 SF5401 SF5402 SF5403 SF5404 SF5405 SF5406 SF5407 SF5408 40 3.2 IFAV - Average Forward Current (A) RthJA - Ther. Resist. Junction/Ambient (K/W) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 30 20 l l 10 TL = constant SF5400 to SF5404 2.8 VR = VRRM f ≤ 1 kHz RthJA ≤ 70 K/W 2.4 PC board 2.0 1.6 1.2 0.8 0.4 0.0 0 0 949548 5 10 15 20 25 30 l - Lead Length (mm) Fig. 1 - Max. Thermal Resistance vs. Lead Length www.vishay.com 92 0 96 12132 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (°C) Fig. 2 - Max. Average Forward Current vs. Ambient Temperature For technical questions within your region, please contact one of the following: Document Number: 86061 [email protected], [email protected], [email protected] Rev. 1.8, 25-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SF5400, SF5401, SF5402, SF5403, SF5404, SF5405, SF5406, SF5407, SF5408 Ultra-Fast Avalanche Sinterglass Diode 100 SF5405 to SF5408 2.8 VR = VRRM f ≤ 1 kHz RthJA ≤ 70 K/W 2.4 PC board 2.0 1.6 1.2 0.8 SF5400 to SF5404 IF - Forward Current (A) IFAV - Average Forward Current (A) 3.2 10 0 20 40 60 1 Tj = 25 °C 0.1 0.01 0.001 0.0 80 100 120 140 160 180 Tamb - Ambient Temperature (°C) 96 12133 Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 VF - Forward Voltage (V) 96 12057 Fig. 6 - Max. Forward Current vs. Forward Voltage 3.2 100 SF5400 to SF5404 SF5405 to SF5408 2.8 IF - Forward Current (A) IFAV - Average Forward Current (A) Tj = 175 °C 0.4 0.0 2.4 2.0 1.6 VR = VRRM 1.2 f ≤ 1 kHz RthJA ≤ 25 K/W 0.8 l = 10 mm 10 Tj = 175 °C 1 Tj = 25 °C 0.1 0.01 0.4 0.0 0 20 40 60 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 80 100 120 140 160 180 Tamb - Ambient Temperature (°C) 96 12061 Fig. 4 - Max. Average Forward Current vs. Ambient Temperature VF - Forward Voltage (V) 96 12059 Fig. 7 - Max. Forward Current vs. Forward Voltage 1000 3.2 SF5405 to SF5408 SF5400 to SF5408 2.8 IR - Reverse Current (A) IFAV - Average Forward Current (A) Vishay Semiconductors 2.4 2.0 1.6 VR = VRRM 1.2 f ≤ 1 kHz RthJA ≤ 25 K/W 0.8 l = 10 mm VR = VRRM 100 10 0.4 0.0 96 12062 1 0 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (°C) Fig. 5 - Max. Average Forward Current vs. Ambient Temperature Document Number: 86061 Rev. 1.8, 25-May-11 96 12065 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) Fig. 8 - Max. Reverse Current vs. Junction Temperature For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 93 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SF5400, SF5401, SF5402, SF5403, SF5404, SF5405, SF5406, SF5407, SF5408 Ultra-Fast Avalanche Sinterglass Diode 120 450 VR = VRRM 400 f = 1 MHz CD - Diode Capacitance (pF) PR - Reverse Power Dissipation (mW) Vishay Semiconductors SF5408 PR - Limit at 100 % VR 350 300 SF5408 PR - Limit at 80 % VR 250 200 SF5404 PR - Limit at 100 % VR 150 SF5404 PR - Limit at 80 % VR 100 50 100 80 60 40 16478 50 75 100 125 150 SF5408 20 0 0.1 0 25 SF5404 175 Tj - Junction Temperature (°C) Fig. 9 - Max. Reverse Power Dissipation vs. Junction Temperature 1 10 100 VR - Reverse Voltage (V) 16479 Fig. 10 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): SOD-64 Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. 1.35 (0.053) max. 26(1.014) min. 4 (0.156) max. 26 (1.014) min. Document-No.: 6.563-5006.4-4 Rev. 3 - Date: 09.February.2005 94 9587 www.vishay.com 94 For technical questions within your region, please contact one of the following: Document Number: 86061 [email protected], [email protected], [email protected] Rev. 1.8, 25-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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