BT138X series D and E 12 A four-quadrant triacs, sensitive gate Rev. 03 — 10 March 2008 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate triac in a SOT186A full pack plastic package. 1.2 Features n Very sensitive gate n Direct interfacing to logic level ICs n Isolated mounting base n Gate triggering in four quadrants n Direct interfacing to low power gate drive circuits n High isolation voltage 1.3 Applications n General purpose switching and phase control n 230 V lamp dimmers 1.4 Quick reference data n n n n n n VDRM ≤ 600 V (BT138X-600D) VDRM ≤ 600 V (BT138X-600E) VDRM ≤ 800 V (BT138X-800E) IGT ≤ 5 mA (BT138X-600D) IGT ≤ 10 mA (BT138X-600E) IGT ≤ 10 mA (BT138X-800E) n n n n n IT(RMS) ≤ 12 A ITSM ≤ 95 A (t = 20 ms) IGT ≤ 10 mA (T2− G+) (BT138X-600D) IGT ≤ 25 mA (T2− G+) (BT138X-600E) IGT ≤ 25 mA (T2− G+) (BT138X-800E) BT138X series D and E NXP Semiconductors 12 A four-quadrant triacs, sensitive gate 2. Pinning information Table 1. Pinning Pin Description Simplified outline 1 main terminal 1 (T1) 2 main terminal 2 (T2) 3 gate (G) mb mounting base; isolated Graphic symbol mb T2 T1 G sym051 1 2 3 SOT186A (TO-220F) 3. Ordering information Table 2. Ordering information Type number Package BT138X-600D Name Description TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A 3-lead TO-220 ‘full pack’ BT138X-600E Version BT138X-800E 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDRM Parameter repetitive peak off-state voltage Conditions Min Max Unit BT138X-600D [1] - 600 V BT138X-600E [1] - 600 V BT138X-800E - 800 V full sine wave; Th ≤ 56 °C; see Figure 4 and 5 - 12 A t = 20 ms - 95 A t = 16.7 ms - 105 A - 45 A2s T2+ G+ - 50 A/µs T2+ G− - 50 A/µs T2− G− - 50 A/µs T2− G+ - 10 A/µs IT(RMS) RMS on-state current ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 I2t I2t dIT/dt rate of rise of on-state current for fusing tp = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs BT138X_SER_D_E_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 10 March 2008 2 of 12 BT138X series D and E NXP Semiconductors 12 A four-quadrant triacs, sensitive gate Table 3. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter IGM Min Max Unit peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature −40 +150 °C Tj junction temperature - 125 °C [1] Conditions over any 20 ms period Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. 003aac220 20 Ptot (W) 15 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 α = 180° 120° α 90° 60° 10 30° 5 0 0 2 4 6 8 10 12 IT(RMS) (A) 14 α = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values BT138X_SER_D_E_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 10 March 2008 3 of 12 BT138X series D and E NXP Semiconductors 12 A four-quadrant triacs, sensitive gate 003aac217 100 ITSM (A) 80 60 40 ITSM IT t 20 1/f Tj(init) = 25 °C max 0 1 10 102 103 104 number of cycles f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 003aac221 103 ITSM IT ITSM (A) t tp Tj(init) = 25 °C max 102 (1) (2) 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit (2) T2− G+ quadrant limit Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values BT138X_SER_D_E_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 10 March 2008 4 of 12 BT138X series D and E NXP Semiconductors 12 A four-quadrant triacs, sensitive gate 003aac219 80 003aac216 15 IT(RMS) (A) 70 IT(RMS) (A) 60 10 50 40 30 5 20 10 0 10-2 10-1 0 -50 1 10 surge duration (s) 0 50 100 Th (°C) 150 f = 50 Hz Th = 56 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of heatsink temperature; maximum values 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Rth(j-h) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from junction to full cycle; see Figure 6 heatsink - - 4.0 K/W thermal resistance from junction to full cycle; in free air ambient - 55 - K/W 003aac222 10 Zth(j-h) (K/W) 1 10−1 P 10−2 t tp 10−3 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 6. Transient thermal impedance from junction to heatsink as a function of pulse width BT138X_SER_D_E_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 10 March 2008 5 of 12 BT138X series D and E NXP Semiconductors 12 A four-quadrant triacs, sensitive gate 6. Isolation characteristics Table 5. Isolation limiting values and characteristics Th = 25 °C unless otherwise specified. Symbol Parameter Visol(RMS) Cisol Conditions Min Typ Max Unit RMS isolation voltage from all three terminals to external heatsink; f = 50 Hz to 60 Hz; sinusoidal waveform; relative humidity ≤ 65 %; clean and dust free - - 2500 V isolation capacitance - 10 - pF from pin 2 to external heatsink; f = 1 MHz 7. Static characteristics Table 6. Static characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter IGT IL Conditions BT138X-600D BT138X-600E BT138X-800E Unit Min Typ Max Min Typ Max T2+ G+ - 1.3 5 - 2.5 10 mA T2+ G− - 2.8 5 - 4.0 10 mA T2− G− - 3.2 5 - 5.0 10 mA T2− G+ - 5.5 10 - 11 25 mA T2+ G+ - - 15 - - 30 mA T2+ G− - - 20 - - 40 mA T2− G− - - 15 - - 30 mA T2− G+ - - 20 - - 40 mA gate trigger current VD = 12 V; IT = 0.1 A; see Figure 8 latching current VD = 12 V; IG = 0.1 A; see Figure 10 IH holding current VD = 12 V; IG = 0.1 A; see Figure 11 - - 10 - - 30 mA VT on-state voltage IT = 15 A; see Figure 9 - 1.4 1.65 - 1.4 1.65 V VGT gate trigger voltage IT = 0.1 A; see Figure 7 - 0.7 1.5 - 0.7 1.5 V VD = 12 V VD = VDRM; Tj = 125 °C ID off-state current VD = VDRM(max); Tj = 125 °C 0.25 0.4 - 0.25 0.4 - V - 0.1 0.5 - 0.1 0.5 mA BT138X_SER_D_E_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 10 March 2008 6 of 12 BT138X series D and E NXP Semiconductors 12 A four-quadrant triacs, sensitive gate 8. Dynamic characteristics Table 7. Dynamic characteristics Symbol Parameter Conditions BT138X-600D BT138X-600E BT138X-800E Unit Min Typ Max Min Typ Max dVD/dt rate of rise of off-state voltage VDM = 0.67 × VDRM(max); exponential waveform; gate open circuit; Tj = 125 °C - 50 - - 150 - V/µs tgt gate-controlled turn-on time - 2 - - 2 - µs ITM = 16 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs 003aac223 1.6 003aac224 3 VGT IGT VGT(25°C) IGT(25°C) (1) (2) 1.2 2 (3) (4) 0.8 (1) (2) (3) 1 (4) 0.4 0 −60 −10 40 90 0 −60 140 Tj (°C) −10 40 90 140 Tj (°C) (1) T2− G+ (2) T2− G− (3) T2+ G− (4) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature BT138X_SER_D_E_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 10 March 2008 7 of 12 BT138X series D and E NXP Semiconductors 12 A four-quadrant triacs, sensitive gate 003aac214 40 003aac225 3 IT (A) IL IL(25°C) 30 2 20 (1) (2) 1 (3) 10 0 0 0.5 1 1.5 2 0 −60 2.5 VT (V) −10 40 90 140 Tj (°C) Vo = 1.175 V Rs = 0.032 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage Fig 10. Normalized latching current as a function of junction temperature 003aac226 2.0 IH IH(25°C) 1.5 1.0 0.5 0 −60 −10 40 90 140 Tj (°C) Fig 11. Normalized holding current as a function of junction temperature BT138X_SER_D_E_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 10 March 2008 8 of 12 BT138X series D and E NXP Semiconductors 12 A four-quadrant triacs, sensitive gate 9. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E A A1 P q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b c w M e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 T (2) 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are ∅ 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC JEITA 3-lead TO-220F EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 Fig 12. Package outline SOT186A (TO-220F) BT138X_SER_D_E_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 10 March 2008 9 of 12 BT138X series D and E NXP Semiconductors 12 A four-quadrant triacs, sensitive gate 10. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BT138X_SER_D_E_3 20080310 Product data sheet - BT138X_SERIES_E_2 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • Legal texts have been adapted to the new company name where appropriate. BT138X-600D product added. Table 7 “Dynamic characteristics”: dVD/dt uprated for BT138X series E. BT138X_SERIES_E_2 20010601 Product data sheet - BT138X_SERIES_E_1 BT138X_SERIES_E_1 19970901 Product data sheet - - BT138X_SER_D_E_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 10 March 2008 10 of 12 BT138X series D and E NXP Semiconductors 12 A four-quadrant triacs, sensitive gate 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BT138X_SER_D_E_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 10 March 2008 11 of 12 NXP Semiconductors BT138X series D and E 12 A four-quadrant triacs, sensitive gate 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Isolation characteristics . . . . . . . . . . . . . . . . . . 6 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 10 March 2008 Document identifier: BT138X_SER_D_E_3