BTA2008 series D and E 0.8 A Three-quadrant triacs high commutation Rev. 01 — 18 January 2008 Product data sheet 1. Product profile 1.1 General description Passivated, guaranteed commutation, sensitive gate triacs in a SOT54 plastic package 1.2 Features n Guaranteed commutation performance at each gate sensitivity n Sensitive gate n Easily interfaced with low power drivers including microcontrollers 1.3 Applications n Motor control n Solenoid drivers 1.4 Quick reference data n n n n n VDRM ≤ 600 V (BTA2008-600D) VDRM ≤ 600 V (BTA2008-600E) VDRM ≤ 800 V (BTA2008-800D) VDRM ≤ 800 V (BTA2008-800E) ITSM ≤ 9 A (t = 20 ms) n n n n n IGT ≤ 5 mA (BTA2008-600D) IGT ≤ 5 mA (BTA2008-800D) IGT ≤ 10 mA (BTA2008-600E) IGT ≤ 10 mA (BTA2008-800E) IT(RMS) ≤ 0.8 A 2. Pinning information Table 1. Pinning Pin Description Simplified outline Graphic symbol 1 main terminal 2 (T2) 2 gate (G) T2 3 main terminal 1 (T1) sym051 T1 G 321 SOT54 (TO-92) BTA2008 series D and E NXP Semiconductors 0.8 A Three-quadrant triacs high commutation 3. Ordering information Table 2. Ordering information Type number Package BTA2008-600D Name Description Version TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 BTA2008-600E BTA2008-800D BTA2008-800E 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDRM Parameter Conditions repetitive peak off-state voltage BTA2008-600D; BTA2008-600E [1] Min Max Unit - 600 V BTA2008-800D; BTA2008-800E - 800 V - 0.8 A t = 20 ms - 9 A t = 16.7 ms - 9.9 A tp = 10 ms - 0.41 A2s ITM = 1.5 A; IG = 20 mA; dIG/dt = 0.2 A/µs - 100 A/µs - 1 A - 5 W - 0.1 W IT(RMS) RMS on-state current full sine wave; Tlead ≤ 70 °C; see Figure 4 and 5 ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 I2t I2t dIT/dt rate of rise of on-state current IGM peak gate current PGM peak gate power PG(AV) average gate power Tstg storage temperature −40 +150 °C Tj junction temperature - 125 °C [1] for fusing over any 20 ms period Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. BTA2008_SER_D_E_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 18 January 2008 2 of 12 BTA2008 series D and E NXP Semiconductors 0.8 A Three-quadrant triacs high commutation 003aac118 1.0 Ptot (W) conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 0.8 0.6 α = 180° 120° 90° α 60° 30° 0.4 0.2 0.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 IT(RMS) (A) 0.9 α = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values 003aac116 12 ITSM (A) 8 ITSM IT 4 t 1/f Tj(init) = 25 °C max 0 1 102 10 103 number of cycles f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA2008_SER_D_E_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 18 January 2008 3 of 12 BTA2008 series D and E NXP Semiconductors 0.8 A Three-quadrant triacs high commutation 003aac119 103 ITSM IT ITSM (A) t tp Tj(init) = 25 °C max (1) 102 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values 003aac117 12 I T(RMS) (A) 10 003aac115 1 IT(RMS) (A) 0.8 8 0.6 6 0.4 4 0.2 2 0 10-2 10-1 0 -50 1 10 surge duration (s) 0 50 100 150 Tlead (°C) f = 50 Hz Tlead = 70 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of lead temperature; maximum values BTA2008_SER_D_E_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 18 January 2008 4 of 12 BTA2008 series D and E NXP Semiconductors 0.8 A Three-quadrant triacs high commutation 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Rth(j-lead) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from junction to full cycle; see Figure 6 lead - - 60 K/W thermal resistance from junction to printed circuit board ambient mounted; lead length 4 mm - 150 - K/W 003aac206 102 Zth(j-lead) (K/W) 10 1 P 10−1 tp 10−2 10−5 Fig 6. 10−4 10−3 10−2 10−1 1 tp (s) t 10 Transient thermal impedance from junction to lead as a function of pulse duration BTA2008_SER_D_E_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 18 January 2008 5 of 12 BTA2008 series D and E NXP Semiconductors 0.8 A Three-quadrant triacs high commutation 6. Static characteristics Table 5. Static characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter IGT IL Conditions BTA2008-600D BTA2008-800D Unit Min Typ Max Min Typ Max T2+ G+ 0.25 - 5 0.5 - 10 mA T2+ G− 0.25 - 5 0.5 - 10 mA T2− G− 0.25 - 5 0.5 - 10 mA T2+ G+ - - 10 - - 12 mA T2+ G− - - 20 - - 20 mA T2− G− - - 10 - - 12 mA - - 10 - - 12 mA gate trigger current VD = 12 V; IT = 0.1 A; see Figure 8 latching current VD = 12 V; IGT = 0.1 A; see Figure 10 IH holding current VD = 12 V; IGT = 0.1 A; see Figure 11 VT on-state voltage IT = 0.85 A; see Figure 9 VGT gate trigger voltage VD = 12 V; IT = 0.1 A; see Figure 7 VD = 400 V; IT = 0.1 A; Tj = 125 °C ID BTA2008-600E BTA2008-800E off-state current VD = VDRM(max); Tj = 125 °C - 1.35 1.6 - 1.35 1.6 V - 0.9 2 - 0.9 2 V 0.2 0.3 - 0.2 0.3 - V - 0.1 0.5 - 0.1 0.5 BTA2008_SER_D_E_1 Product data sheet mA © NXP B.V. 2008. All rights reserved. Rev. 01 — 18 January 2008 6 of 12 BTA2008 series D and E NXP Semiconductors 0.8 A Three-quadrant triacs high commutation 7. Dynamic characteristics Table 6. Dynamic characteristics Symbol Parameter Conditions BTA2008-600D BTA2008-800D BTA2008-600E BTA2008-800E Min Typ Max Min Typ Max Unit dVD/dt rate of rise of off-state voltage VDM = 0.67 × VDRM(max); Tj = 125 °C; exponential waveform; gate open circuit 200 - - 600 - - V/µs dIcom/dt rate of change of commutating current VDM = 400 V; Tj = 125 °C; IT(RMS) = 0.8 A; dV/dt = 10 V/µs; gate open circuit 0.5 - - 1.6 - - A/ms tgt gate-controlled turn-on time ITM = 1 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs - 2 - - 2 - µs 001aab101 1.6 001aac669 3 (1) VGT IGT VGT(25°C) IGT(25°C) 1.2 2 (2) (3) 0.8 1 0.4 −50 0 50 100 0 −50 150 Tj (°C) 0 50 100 150 Tj (°C) (1) T2− G− (2) T2+ G− (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature BTA2008_SER_D_E_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 18 January 2008 7 of 12 BTA2008 series D and E NXP Semiconductors 0.8 A Three-quadrant triacs high commutation 003aac114 1 IT (A) 001aab100 3 IL 0.8 IL(25°C) 2 0.6 (2) (1) 0.4 (3) 1 0.2 0 0 0.5 1 1.5 VT (V) 0 −50 2 0 50 100 150 Tj (°C) Vo = 0.835 V Rs = 0.5 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage Fig 10. Normalized latching current as a function of junction temperature 001aab099 3 IH IH(25°C) 2 1 0 −50 0 50 100 150 Tj (°C) Fig 11. Normalized holding current as a function of junction temperature BTA2008_SER_D_E_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 18 January 2008 8 of 12 BTA2008 series D and E NXP Semiconductors 0.8 A Three-quadrant triacs high commutation 8. Package outline Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC SOT54 JEDEC JEITA TO-92 SC-43A EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 Fig 12. Package outline SOT54 (TO-92) BTA2008_SER_D_E_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 18 January 2008 9 of 12 BTA2008 series D and E NXP Semiconductors 0.8 A Three-quadrant triacs high commutation 9. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BTA2008_SER_D_E_1 20080118 Product data sheet - - BTA2008_SER_D_E_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 18 January 2008 10 of 12 BTA2008 series D and E NXP Semiconductors 0.8 A Three-quadrant triacs high commutation 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 10.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BTA2008_SER_D_E_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 18 January 2008 11 of 12 NXP Semiconductors BTA2008 series D and E 0.8 A Three-quadrant triacs high commutation 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 18 January 2008 Document identifier: BTA2008_SER_D_E_1