VISHAY BA779S

BA779.BA779S
Vishay Telefunken
Silicon PIN Diodes
Features
D Wide frequency range 10 MHz to 1 GHz
Applications
Current controlled HF resistance in adjustable
attenuators
94 8550
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Test Conditions
Type
Symbol
VR
IF
Tj
Tstg
Value
30
50
125
–55...+125
Unit
V
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
RthJA
Value
500
Unit
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Reverse current
Diode capacitance
Differential forward resistance
Reverse impedance
Test Conditions
IF=20mA
VR=30 V
f=100MHz, VR=0
f=100MHz, IF=1.5mA
Minority carrier lifetime
IF=10mA, IR=10mA
Document Number 85532
Rev. 3, 01-Apr-99
f=100MHz, VR=0
Type
BA779
BA779S
Symbol
VF
IR
CD
rf
Min
zr
zr
5
9
t
Typ
4
Max
1
50
0.5
50
Unit
V
nA
pF
W
kW
kW
ms
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1 (4)
BA779.BA779S
Vishay Telefunken
a – Typical Cross Modulation Distortion ( dB )
Characteristics (Tj = 25_C unless otherwise specified)
IF – Forward Current ( mA )
100
10
Tamb= 25°C
1
Scattering Limit
0.1
0.01
0
0.4
0.8
1.2
1.6
V0 = 40 dB mV
f1 = 100 MHz unmodulated
–20
–40
–60
–80
0
95 9733
Figure 1. Forward Current vs. Forward Voltage
P–Circuit with 10 dB Attenuation
0
2.0
VF – Forward Voltage ( V )
95 9735
20
20
40
60
80
f2, modulated with 200 kHz, m=100% (MHz)
Figure 3. Typ. Cross Modulation Distortion vs
Frequency f2
rf – Differential Forward Resistance (W )
10000
1000
100
f >20 MHz
Tj = 25°C
10
1
0.001
95 9734
0.01
0.1
1
10
IF – Forward Current ( mA )
Figure 2. Differential Forward Resistance vs.
Forward Current
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2 (4)
Document Number 85532
Rev. 3, 01-Apr-99
BA779.BA779S
Vishay Telefunken
Dimensions in mm
14384
top view
14385
Document Number 85532
Rev. 3, 01-Apr-99
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3 (4)
BA779.BA779S
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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4 (4)
Document Number 85532
Rev. 3, 01-Apr-99