DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC124EK NPN resistor-equipped transistor Product specification Supersedes data of 1997 Sep 08 File under Discrete Semiconductors, SC04 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EK FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) 3 • Simplification of circuit design 3 • Reduces number of components and board space. R1 1 R2 APPLICATIONS 2 • Especially suitable for space reduction in interface and driver circuits 1 2 Top view • Inverter circuit configurations without use of external resistors. MAM284 Fig.1 Simplified outline (SC-59) and symbol. DESCRIPTION MARKING NPN resistor-equipped transistor in an SC-59 plastic package. PNP complement: PDTA124EK. 1 TYPE NUMBER 3 MARKING CODE PDTC124EK PINNING 06 2 MGA893 - 1 PIN DESCRIPTION 1 base/input 2 emitter/ground 3 collector/output Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCEO collector-emitter voltage − − 50 V IO output current (DC) − − 100 mA ICM peak collector current − − 100 mA Ptot total power dissipation Tamb ≤ 25 °C − − 250 mW hFE DC current gain IC = 5 mA; VCE = 5 V 60 − − R1 input resistor 15.4 22 28.6 R2 -------R1 resistor ratio 0.8 1 1.2 1998 May 08 open base 2 kΩ Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EK LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 10 V VI input voltage positive − +40 V negative − −10 V − 100 mA IO output current (DC) ICM peak collector current Ptot total power dissipation Tstg − 100 mA − 250 mW storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 500 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current ICEO collector cut-off current CONDITIONS IE = 0; VCB = 50 V MIN. − TYP. − MAX. 100 UNIT nA IB = 0; VCE = 30 V − − 1 µA IB = 0; VCE = 30 V; Tj = 150 °C − − 50 µA − − 180 µA IEBO emitter cut-off current IC = 0; VEB = 5 V hFE DC current gain IC = 5 mA; VCE = 5 V 60 − − VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − − 150 mV Vi(off) input-off voltage IC = 100 µA; VCE = 5 V − 1.1 0.8 V Vi(on) input-on voltage IC = 5 mA; VCE = 0.3 V 2.5 1.7 − V R1 input resistor 15.4 22 28.6 kΩ R2 -------R1 resistor ratio 0.8 1 1.2 Cc collector capacitance − − 2.5 1998 May 08 IE = ie = 0; VCB = 10 V; f = 1 MHz 3 pF Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EK MGM916 103 handbook, halfpage MGM915 1 handbook, halfpage hFE (2) (1) VCEsat (V) (3) 102 (1) (2) (3) 10−1 10 1 10−1 1 10 IC (mA) 10−2 10−1 102 VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.3 Fig.4 DC current gain as a function of collector current; typical values. MGM918 10 1 10 102 Collector-emitter saturation voltage as a function of collector current; typical values. MGM917 102 handbook, halfpage handbook, halfpage IC (mA) Vi(on) (V) Vi(off) (V) 10 (1) (2) 1 (1) (2) (3) (3) 1 10−1 10−2 10−1 1 IC (mA) 10−1 10−1 10 VCE = 5 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. VCE = 0.3 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.5 Fig.6 Input-off voltage as a function of collector current; typical values. 1998 May 08 4 1 10 IC (mA) 102 Input-on voltage as a function of collector current; typical values. Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EK PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT346 E D A B X HE v M A 3 Q A A1 1 c 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e e1 HE Lp Q v w mm 1.3 1.0 0.1 0.013 0.50 0.35 0.26 0.10 3.1 2.7 1.7 1.3 1.9 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 OUTLINE VERSION SOT346 1998 May 08 REFERENCES IEC JEDEC EIAJ TO-236 SC-59 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EK DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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