DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMD9 NPN/PNP resistor-equipped transistors Product specification Supersedes data of 1999 Jan 07 1999 May 20 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors PUMD9 FEATURES • Transistors with different polarity and built-in bias resistors R1 and R2 (typ. 10 kΩ and 47 kΩ respectively) • No mutual interference between the transistors 6 handbook, halfpage • Simplification of circuit design • Reduces number of components and board space. 6 5 5 4 4 R1 R2 TR2 TR1 APPLICATIONS R2 • Especially suitable for space reduction in portable equipment 1 Top view 2 R1 3 1 MAM343 2 3 • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SC-88) and symbol. DESCRIPTION NPN/PNP resistor-equipped transistors in an SC-88 (SOT363) plastic package. PINNING PIN DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 2, 5 6, 3 1, 4 MBK120 MARKING TYPE NUMBER PUMD9 1999 May 20 MARKING CODE Fig.2 Equivalent inverter symbol. Dt9 2 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors PUMD9 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 10 V VI input voltage positive − +40 V negative − −6 V IO output current (DC) − 100 mA ICM peak collector current − 100 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C − 300 mW Tamb ≤ 25 °C; note 1 Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 Note 1. Refer to SC-88 standard mounting conditions. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Refer to SC-88 standard mounting conditions. 1999 May 20 3 VALUE UNIT 416 K/W Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors PUMD9 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO collector cut-off current IC = 0; VCB = 50 V − − 100 nA ICEO collector cut-off current IB = 0; VCE = 30 V − − 1 µA IB = 0; VCE = 30 V; Tj = 150 °C − − 50 µA µA IEBO emitter cut-off current IC = 0; VEB = 5 V − − 150 hFE DC current gain IC = 5 mA; VCE = 5 V 100 − − VCEsat collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA − − 100 mV Vi(off) input-off voltage IC = 100 µA; VCE = 5 V − 0.7 0.5 V Vi(on) input-on voltage IC = 1 mA; VCE = 0.3 V 1.4 0.8 − V R1 input resistor 7 10 13 kΩ R2 ------R1 resistor ratio 3.7 4.7 5.7 Cc collector capacitance TR1 (NPN) − − 2.5 pF TR2 (PNP) − − 3 pF 1999 May 20 IE = ie = 0; VCB = 10 V; f = 1 MHz 4 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors MGR757 103 handbook, halfpage PUMD9 MGR756 103 handbook, halfpage (1) hFE (2) VCEsat (3) (mV) 102 102 (1) (2) (3) 10 1 10−1 1 10 IC (mA) 10 10−1 102 TR1 (NPN); VCE = 5 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. TR1 (NPN); IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.3 Fig.4 DC current gain as a function of collector current; typical values. MGR759 2 1 10 Vi(off) (V) 1.6 102 Collector-emitter saturation voltage as a function of collector current; typical values. MGR758 102 handbook, halfpage handbook, halfpage IC (mA) Vi(on) (V) 10 1.2 (1) (2) 0.8 1 (1) (3) (2) 0.4 (3) 0 10−2 10−1 1 IC (mA) 10−1 10−1 10 TR1 (NPN); VCE = 5 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. TR1 (NPN); VCE = 0.3 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.5 Fig.6 Input-off voltage as a function of collector current; typical values. 1999 May 20 5 1 10 IC (mA) 102 Input-on voltage as a function of collector current; typical values. Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors MGR761 103 handbook, halfpage hFE PUMD9 MGR760 −103 handbook, halfpage (1) VCEsat (2) (3) 102 (mV) −102 (1) 10 (2) (3) 1 −10−1 −1 −10 IC (mA) −10 −10−1 −102 TR2 (PNP); VCE = −5 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. TR2 (PNP); IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.7 Fig.8 DC current gain as a function of collector current; typical values. MGR763 −2 −1 −10 Vi(off) (V) −1.6 −102 Collector-emitter saturation voltage as a function of collector current; typical values. MGR762 −102 handbook, halfpage handbook, halfpage IC (mA) Vi(on) (V) −10 −1.2 (1) (2) −0.8 (1) −1 (3) (2) (3) −0.4 −0 −10−2 −10−1 −1 IC (mA) −10−1 −10−1 −10 −1 −10 IC (mA) −102 TR2 (PNP); VCE = −5 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. TR2 (PNP); VCE = −0.3 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.9 Fig.10 Input-on voltage as a function of collector current; typical values. Input-off voltage as a function of collector current; typical values. 1999 May 20 6 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors PUMD9 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 1999 May 20 REFERENCES IEC JEDEC EIAJ SC-88 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors PUMD9 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 May 20 8 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors NOTES 1999 May 20 9 PUMD9 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors NOTES 1999 May 20 10 PUMD9 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors NOTES 1999 May 20 11 PUMD9 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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